TLRH50T MARKTECH | Alldatasheet

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TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F) 2006-12-5 1 TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F) ɾThis material is technological examination material to aim at the product introduction. The change in the content of the characteristic might be accompanied at the final specification process. The final specification will be able to be gotten in the brokerage department when the product is designed and to get the confirmation. Preliminary For part availability and ordering information please call Toll Free: 800.984.5337 Website: www.marktechopto.com | Email: info@marktechopto.com

TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F) 2006-12-5 2 TOSHIBA InGaA ℓP LED TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F) Panel Circuit Indicators

  • Lead(Pb)-free products (lead: Sn-Ag-Cu)
  • 3 mm package
  • InGaAℓP technology
  • All plastic mold type
  • Transparent lens
  • Line-up: 3 colors (red, orange, yellow)
  • High intensity light emission
  • Excellent low current light output Lineup Unit: mm JEDEC ― JEITA ― TOSHIBA 4-3E1A Weight: 0.14 g Product Name Color Material TLRH50T(F) TLSH50T(F) Red TLOH50T(F) Orange TLYH50T(F) Yellow PInGaAl Preliminary

TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F) 2006-12-5 3 Maximum Ratings (Ta = 25°C) Electrical and Optical Characteristics (Ta = 25°C) Typ. Emission Wavelength Luminous Intensity IV Forward Voltage VF Reverse Current IR Product Name λd λP ∆λ I F Min Typ. I F Typ. Max I F Max V R TLRH50T(F) 630 (644) 13 20 850 2000 20 1.9 2.4 20 50 4 TLSH50T(F) 613 (623) 13 20 2720 4700 20 2.0 2.4 20 50 4 TLOH50T(F) 605 (612) 13 20 1530 5800 20 2.0 2.4 20 50 4 TLYH50T(F) 587 (590) 13 20 1530 4400 20 2.0 2.4 20 50 4 Unit nm mA mcd mA V mA µA V Precautions Please be careful of the following:

  • Soldering temperature: 260°C max, soldering time: 3 s max (Soldering portion of lead: up to 1.6 mm from the body of the device)
  • If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming.
  • This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. Product Name Forward Current IF (mA) Reverse Voltage VR (V) Power Dissipation PD (mW) Operating Temperature Topr (°C) Storage Temperature Tstg (°C) TLRH50T(F) TLSH50T(F) TLOH50T(F) TLYH50T(F) 50 4 120 −40~100 −40~120 Preliminary

TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F) 2006-12-5 4 TLRH50T(F) Ambient temperature Ta (°C) 12020 40 60 80 100 Relative luminous intensity Forward voltage V F (V) IF – VF Forward current I F ( m A ) Forward current I F ( m A ) IV – IF Luminous intensity I V (mcd) Case temperature Tc (°C) IV – Tc Relative luminous intensity I V Wavelength λ (nm) Relative luminous intensity – Wavelength IF – Ta Allowable forward current I F ( m A ) Radiation pattern Ta = 25°C 30° 60° 90° 90° 30° 60° 80° 70° 50° 40° 20° 10° 70° 80° 50° 40° 20° 10° 100 Ta = 25°C 10 1 100 10000 1000 Ta = 25°C 100 20 −20 80 0.1 0.3 0.5 0 40 60 700 0.8 0.6 1.0 0.2 0.4 IF = 20 mA Ta = 25°C 680 660 640 620600580 Preliminary

TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F) 2006-12-5 5 TLSH50T(F) 12020 40 60 80 100 Relative luminous intensity Forward voltage V F (V) IF – VF Forward current I F ( m A ) Case temperature Tc (°C) IV – Tc Relative luminous intensity I V Wavelength λ (nm) Relative luminous intensity – Wavelength Ambient temperature Ta (°C) IF – Ta Allowable forward current I F ( m A ) Radiation pattern Ta = 25°C 30° 60° 90° 90° 30° 60° 80° 70° 50° 40° 20° 10° 70° 80° 50° 40° 20° 10° 100 Ta = 25°C 20 −20 80 0.1 0.3 0.5 0 40 60 680 0.8 0.6 1.0 0.2 0.4 IF = 20 mA Ta = 25°C 660 640 620 600580560 Forward current I F ( m A ) IV – IF Luminous intensity I V (mcd) 10 1 100 10000 1000 Ta = 25°C 100 Preliminary

TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F) 2006-12-5 6 TLOH50T(F) 12020 40 60 80 100 Relative luminous intensity Forward voltage V F (V) IF – VF Forward current I F ( m A ) Forward current I F ( m A ) IV – IF Luminous intensity I V (mcd) Case temperature Tc (°C) IV – Tc Relative luminous intensity I V Wavelength λ (nm) Relative luminous intensity – Wavelength Ambient temperature Ta (°C) IF – Ta Allowable forward current I F ( m A ) Radiation pattern Ta = 25°C 30° 60° 90° 90° 30° 60° 80° 70° 50° 40° 20° 10° 70° 80° 50° 40° 20° 10° 100 Ta = 25°C 101 100 10000 Ta = 25°C 1000 100 20 −20 80 0.1 0.3 0.5 0 40 60 660 0.8 0.6 1.0 0.2 0.4 IF = 20 mA Ta = 25°C 640 620 600580560540 Preliminary

TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F) 2006-12-5 7 TLYH50T(F) Relative luminous intensity Forward voltage V F (V) IF – VF Forward current I F ( m A ) Forward current I F ( m A ) IV – IF Luminous intensity I V (mcd) Case temperature Tc (°C) IV – Tc Relative luminous intensity I V Wavelength λ (nm) Relative luminous intensity – Wavelength Ambient temperature Ta (°C) IF – Ta Allowable forward current I F ( m A ) Radiation pattern Ta = 25°C 30° 60° 90° 90° 30° 60° 80° 70° 50° 40° 20° 10° 70° 80° 50° 40° 20° 10° 12020 40 60 80 100 100 Ta = 25°C 101 100 10000 1000 Ta = 25°C 100 20 −20 80 0.1 0.3 0.5 0 40 60 660 0.8 0.6 1.0 0.2 0.4 IF = 20 mA Ta = 25°C 640 620 600 580560540 Preliminary

TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F) 2006-12-5 8

  • TOSHIBA is continually working to im prove the quality and reliability of it s products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inhe rent electrical sensitivity and vulnerability to physical stress. It is the responsibility of t he buyer, when utilizing TOSHIBA products , to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA pr oducts are used within specified operating ranges as set forth in the most recent TOSHIBA products specif ications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semicond uctor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
  • The TOSHIBA products listed in this document are inte nded for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signa l instruments, combusti on control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.
  • Gallium arsenide (GaAs) is a substance used in the pr oducts described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage.
  • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for an y infringements of intellec tual property or other rights of the third parties which may re sult from its use. No license is grant ed by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
  • The information contained herein is subject to change without notice. 000707EACRESTRICTIONS ON PRODUCT USE