TLRH30TP MARKTECH | Alldatasheet

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TLRH30TP(F),TLRMH30TP(F),TLSH30TP(F),TLOH30TP(F),TLYH30TP(F) 2006-09-29 1 TOSHIBA InGaA ℓP LED TLRH30TP(F),TLRMH30TP(F),TLS H30TP(F),TLOH30TP(F),TLYH30TP(F) Panel Circuit Indicator

  • Lead(Pb)-free products (lead: Sn-Ag-Cu)
  • 5 mm package
  • InGaAℓP technology
  • All plastic mold type
  • Transparent lens
  • Lineup: 3colors (red, orange, yellow)
  • High intensity light emission
  • Excellent low current light output
  • Applications: Traffic signals, Safety equipment, Backlight
  • Stopper lead type is also available. TLRH30T(F) , TLRMH30T(F), TLSH30T(F), TLOH30T(F), TLYH30T(F) Lineup Product Name Color Material TLRH30TP(F) Red TLRMH30TP(F) Red TLSH30TP(F) Red TLOH30TP(F) Orange TLYH30TP(F) Yellow PInGaAl Maximum Ratings (Ta = 25°C) Product Name Forward Current IF (mA) Reverse Voltage VR (V) Power Dissipation PD (mW) Operating Temperature Topr (°C) Storage Temperature Tstg (°C) TLRH30TP(F) TLRMH30TP(F) TLSH30TP(F) TLOH30TP(F) TLYH30TP(F) 50 4 120 −40~100 − 40~120 Unit: mm 1. ANODE 2. CATHODE Cathode index (1.0) 8.55ʶ0.2 JEDEC ― JEITA ― TOSHIBA ― Weight: 0.29 g For part availability and ordering information please call Toll Free: 800.984.5337 Website: www.marktechopto.com | Email: info@marktechopto.com

TLRH30TP(F),TLRMH30TP(F),TLSH30TP(F),TLOH30TP(F),TLYH30TP(F) 2006-09-29 2 Electrical and Optical Characteristics (Ta = 25°C) Typ. Emission Wavelength Luminous Intensity IV Forward Voltage VF Reverse Current IR Product Name λd λP ∆λ I F Min Typ. I F Typ. Max I F Max V R TLRH30TP(F) 630 (644) 13 20 272 680 20 1.9 2.4 20 50 4 TLRMH30TP(F) 626 (636) 13 20 476 950 20 1.9 2.4 20 50 4 TLSH30TP(F) 613 (623) 13 20 476 1300 20 2.0 2.4 20 50 4 TLOH30TP(F) 605 (612) 13 20 476 1600 20 2.0 2.4 20 50 4 TLYH30TP(F) 587 (590) 13 20 476 1350 20 2.0 2.4 20 50 4 Unit nm mA mcd mA V mA µA V Precautions Please be careful of the following:

  • Soldering temperature: 260°C max, soldering time: 3 s max (Soldering portion of lead: up to 1.6 mm from the body of the device)
  • If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming.
  • This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light.

TLRH30TP(F),TLRMH30TP(F),TLSH30TP(F),TLOH30TP(F),TLYH30TP(F) 2006-09-29 3 TLRH30TP(F) Relative luminous intensity Forward voltage V F (V) IF – VF Forward current I F ( m A ) Wavelength λ (nm) Relative luminous intensity – Wavelength Ambient temperature Ta (°C) IF – Ta Allowable forward current I F ( m A ) 400 120 20 60 80 100 2.0 1.6 2.3 1.7 2.1 100 1.8 1.9 2.2 Ta = 25°C Luminous intensity I V (mcd) IV – IF 101 100 10000 3 5 30 50 100 Ta = 25°C 1000 300 500 3000 5000 Forward current I F ( m A ) 1.0 580 0.8 0.6 0.4 0.2 600 620 640 660 680 700 Radiation pattern Ta = 25°C 30° 60° 90° 90° 30° 60° 80° 70° 50° 40° 20° 10° 70° 50° 40° 20° 10° Case temperature Tc (°C) IV – Tc Relative luminous intensity I V 0.1 0.3 0.5 20 −20 800 40 60

TLRH30TP(F),TLRMH30TP(F),TLSH30TP(F),TLOH30TP(F),TLYH30TP(F) 2006-09-29 4 TLRMH30TP(F) Relative luminous intensity Forward voltage V F (V) IF – VF Forward current I F ( m A ) IV – IF Luminous intensity I V (mcd) Wavelength λ (nm) Relative luminous intensity – Wavelength Ambient temperature Ta (°C) IF – Ta Allowable forward current I F ( m A ) 400 120 20 60 80 100 620580 700 0.8 0.6 1.0 0.2 0.4 600 640 660 680 IF = 20 mA Ta = 25°C Forward current I F ( m A ) 2.0 1.6 2.3 1.7 2.1 100 1.8 1.9 2.2 Ta = 25°C 10 1 100 10000 3 5 30 50 100 Ta = 25°C 1000 300 500 3000 5000 Radiation pattern Ta = 25°C 30° 60° 90° 90° 30° 60° 80° 70° 50° 40° 20° 10° 70° 50° 40° 20° 10° Case temperature Tc (°C) IV – Tc Relative luminous intensity I V 0.1 0.3 0.5 20 −20 800 40 60

TLRH30TP(F),TLRMH30TP(F),TLSH30TP(F),TLOH30TP(F),TLYH30TP(F) 2006-09-29 5 TLSH30TP(F) 0.8 0.6 1.0 0.2 0.4 IF = 20 mA Ta = 25°C 600560 680580 620 640 660 Ambient temperature Ta (°C) IF – Ta Allowable forward current I F ( m A ) 400 120 20 60 80 100 Relative luminous intensity Forward voltage V F (V) IF – VF Forward current I F ( m A ) Forward current I F ( m A ) IV – IF Luminous intensity I V (mcd) Wavelength λ (nm) Relative luminous intensity – Wavelength Radiation pattern Ta = 25°C 30° 60° 90° 90° 30° 60° 80° 70° 50° 40° 20° 10° 70° 50° 40° 20° 10° Case temperature Tc (°C) IV – Tc Relative luminous intensity I V 0.1 0.3 0.5 20−20 800 40 60 100 Ta = 25°C 101 100 10000 3 5 30 50 100 Ta = 25°C 1000 300 500 3000 5000

TLRH30TP(F),TLRMH30TP(F),TLSH30TP(F),TLOH30TP(F),TLYH30TP(F) 2006-09-29 6 TLOH30TP(F) Ambient temperature Ta (°C) IF – Ta Allowable forward current I F ( m A ) 400 120 20 60 80 100 Forward current I F ( m A ) IV – IF Luminous intensity I V (mcd) Relative luminous intensity Forward voltage V F (V) IF – VF Forward current I F ( m A ) Wavelength λ (nm) Relative luminous intensity – Wavelength IF = 20 mA Ta = 25°C 580540 660 0.8 0.6 1.0 0.2 0.4 560 600 620 640 Radiation pattern Ta = 25°C 30° 60° 90° 90° 30° 60° 80° 70° 50° 40° 20° 10° 70° 50° 40° 20° 10° Case temperature Tc (°C) IV – Tc Relative luminous intensity I V 0.1 0.3 0.5 20−20 800 40 60 100 Ta = 25°C 101 100 10000 3 5 30 50 100 Ta = 25°C 1000 300 500 3000 5000

TLRH30TP(F),TLRMH30TP(F),TLSH30TP(F),TLOH30TP(F),TLYH30TP(F) 2006-09-29 7 100 Ta = 25°C TLYH30TP(F) Ambient temperature Ta (°C) IF – Ta Allowable forward current I F ( m A ) 400 120 20 60 80 100 Relative luminous intensity Forward voltage V F (V) IF – VF Forward current I F ( m A ) Wavelength λ (nm) Relative luminous intensity – Wavelength IF = 20 mA Ta = 25°C 580540 660 0.8 0.6 1.0 0.2 0.4 560 600 620 640 Forward current I F ( m A ) IV – IF Luminous intensity I V (mcd) Radiation pattern Ta = 25°C 30° 60° 90° 90° 30° 60° 80° 70° 50° 40° 20° 10° 70° 50° 40° 20° 10° Case temperature Tc (°C) IV – Tc Relative luminous intensity I V 0.1 0.3 0.5 20−20 800 40 60 101 100 10000 3 5 30 50 100 Ta = 25°C 1000 300 500 3000 5000

TLRH30TP(F),TLRMH30TP(F),TLSH30TP(F),TLOH30TP(F),TLYH30TP(F) 2006-09-29 8

  • TOSHIBA is continually working to im prove the quality and reliability of it s products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inhe rent electrical sensitivity and vulnerability to physical stress. It is the responsibility of t he buyer, when utilizing TOSHIBA products , to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA pr oducts are used within specified operating ranges as set forth in the most recent TOSHIBA products specif ications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semicond uctor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
  • The TOSHIBA products listed in this document are inte nded for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunc tion or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control in struments, airplane or spaceship instruments, transportation instruments, traffic signa l instruments, combusti on control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.
  • Gallium arsenide (GaAs) is a subst ance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage.
  • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intelle ctual property or other rights of the third parties which may re sult from its use. No license is grant ed by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
  • The information contained herein is subject to change without notice. 000707EACRESTRICTIONS ON PRODUCT USE