TLRE1100B

TLRE1100B MARKTECH | Alldatasheet

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TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) 2006-05-31 1 TOSHIBA LED Lamps TLRE1100B(T11), TLSE1100B(T11), TLOE1100B(T11), TLYE1100B(T11), TLGE1100B(T11), TLFGE1100B(T11) TLPGE1100B(T11) Panel Circuit Indicator

• Surface-mount devices
• Flat-top type
• InGaAℓP LEDs
• High luminous intensity
• Low drive current, high-intensity light emission
• Colors: red, orange, yellow, green, pure green
• Pb-free reflow soldering is possible
• Applications: automotive use, message signboards, backlighting etc.
• Standard embossed tape packing: T11 (2000/reel) 8-mm tape reel Color and Material Unit: mm JEDEC ― JEITA ― TOSHIBA 4-3R1 Weight: 0.035 g (typ.) Product Name Color Material TLRE1100B Red TLSE1100B Red TLOE1100B Orange TLYE1100B Yellow TLGE1100B Green TLFGE1100B Green TLPGE1100B Pure Green InGaAℓP For part availability and ordering information please call Toll Free: 800.984.5337 Website: www.marktechopto.com | Email: info@marktechopto.com

TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) 2006-05-31 2 Maximum Ratings (Ta = 25°C) Product Name Forward Current IF (mA) Please see Note 1 Reverse Voltage VR (V) Power Dissipation PD (mW) Operation Temperature Topr (°C) Storage Temperature Tstg (°C) TLRE1100B TLSE1100B TLOE1100B TLYE1100B TLGE1100B TLFGE1100B TLPGE1100B 50 4 120 −40~100 − 40~100 Note 1: Forward current derating Electrical Characteristics (Ta = 25°C) Forward Voltage VF Reverse Current IR Product Name Min Typ. Max I F Max V R TLRE1100B 1.6 1.9 2.4 TLSE1100B 1.6 1.9 2.4 TLOE1100B 1.6 2.0 2.4 TLYE1100B 1.6 2.0 2.4 TLGE1100B 1.6 2.0 2.4 TLFGE1100B 1.6 2.0 2.4 TLPGE1100B 1.6 2.1 2.4 20 10 4 Unit V mA µA V 0 100 80 120 40 20 60 Allowable forward current I F (mA) Ambient temperature Ta (°C) ) IF – Ta

TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) 2006-05-31 3 Optical Characteristics–1 (Ta = 25°C) Luminous Intensity IV Product Name Min Typ. Max I F Available Iv rank Please see Note 2 TLRE1100B 40 100 320 20 PA / QA / RA / SA TLSE1100B 63 180 500 20 QA / RA / SA / TA TLOE1100B 63 150 500 20 QA / RA / SA / TA TLYE1100B 63 150 500 20 QA / RA / SA / TA TLGE1100B 40 100 320 20 PA / QA / RA / SA TLFGE1100B 25 45 125 20 NA / PA / QA TLPGE1100B 10 25 50 20 LA / MA / NA Unit mcd mcd mcd mA Note 2: The specification on t he above table is used for Iv classification of LEDs in Toshiba facility. Each reel includes the same rank LEDs. Let the delivery ratio of each rank be unquestioned. Luminous Intensity IV Rank Min Max LA 10 20 MA 16 32 NA 25 50 PA 40 80 QA 63 125 RA 100 200 SA 160 320 TA 250 500 Unit mcd mcd Optical Characteristics–2 (Ta = 25°C) Emission Spectrum Peak Emission Wavelength λp ∆λ Dominant Wavelength λdProduct Name Min Typ. Max Typ. Min Typ. Max IF TLRE1100B ⎯ 644 ⎯ 18 624 630 638 TLSE1100B ⎯ 623 ⎯ 15 607 613 621 TLOE1100B ⎯ 612 ⎯ 15 599 605 613 TLYE1100B ⎯ 590 ⎯ 15 581 587 595 TLGE1100B ⎯ 574 ⎯ 13 565 571 576 TLFGE1100B ⎯ 568 ⎯ 11 561 565 569 TLPGE1100B ⎯ 562 ⎯ 11 555 558 564 Unit nm nm nm mA The cautions

• This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by the IR light.
• This product is designed as a general display light source usage, and it has applied the measurement standard that matched with the sensitivity of human's eyes. Therefore, it is not intended for usage of functional application (ex. Light source for sensor, optical communication and etc) except general display light source.

TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) 2006-05-31 4 TLRE1100B IF = 20 mA Ta = 25°C 640 0.4 1.0 0.8 580 680 660 620600 700 0.6 0.2 0.1 −25 50 0.3 0.5 0 100 25 75 Relative luminous intensity IF – VF Forward current I F ( m A ) Case temperature Tc (°C) IV – Tc Relative luminous intensity I V Wavelength λ (nm) Ta = 25°C Radiation pattern 30° 60° 90° 90° 30° 60° 80° 70° 50° 40° 20° 10° 70° 80° 50° 40° 20° 10° Forward voltage V F (V) Forward current I F ( m A ) IV – IF Luminous intensity I V (mcd) Ta = 25°C 1000 1 50 500 300 100 3 5 10 30 100 1.6 2.0 1.7 2.2 1.8 2.1 1.9 Ta = 25°C (typ.) (typ.) (typ.) Wavelength characteristic (typ.) (typ.)

TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) 2006-05-31 5 TLSE1100B Ta = 25°C Radiation pattern 30° 60° 90° 90° 30° 60° 80° 70° 50° 40° 20° 10° 70° 80° 50° 40° 20° 10° IF = 20 mA Ta = 25°C 640 0.4 1.0 0.8 580 680 660 620600 700 0.6 0.2 0.1 −25 75 0.3 0.5 0 100 25 50 Relative luminous intensity Forward voltage V F (V) IF – VF Forward current I F ( m A ) Forward current I F ( m A ) IV – IF Luminous intensity I V (mcd) Case temperature Tc (°C) IV – Tc Relative luminous intensity I V Wavelength λ (nm) Ta = 25°C 1000 1 50 500 300 100 3 5 10 30 100 Ta = 25°C 100 1.6 2.1 (typ.) (typ.) (typ.) (typ.) Wavelength characteristic (typ.)

TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) 2006-05-31 6 TLOE1100B IF = 20 mA Ta = 25°C 600 0.4 1.0 0.8 540 640 620 580560 660 0.6 0.2 75 100 0.3 0.5 −25 0 50 Ta = 25°C 100 1.9 2.0 Relative luminous intensity Forward voltage V F (V) IF – VF Forward current I F ( m A ) Forward current I F ( m A ) IV – IF Luminous intensity I V (mcd) Case temperature Tc (°C) IV – Tc Relative luminous intensity I V Wavelength λ (nm) Ta = 25°C Radiation pattern 30° 60° 90° 90° 30° 60° 80° 70° 50° 40° 20° 10° 70° 80° 50° 40° 20° 10° Ta = 25°C 1000 1 50 500 300 100 3 5 10 30 100 (typ.) (typ.) (typ.) Wavelength characteristic (typ.) (typ.)

TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) 2006-05-31 7 TLYE1100B Ta = 25°C Radiation pattern 30° 60° 90° 90° 30° 60° 80° 70° 50° 40° 20° 10° 70° 80° 50° 40° 20° 10° 0.1 −25 75 0.3 0.5 0 100 25 50 Ta = 25°C 1000 1 50 500 300 100 3 5 10 30 100 Ta = 25°C 100 1.9 2.0 Relative luminous intensity Forward voltage V F (V) IF – VF Forward current I F ( m A ) Forward current I F ( m A ) IV – IF Luminous intensity I V (mcd) Case temperature Tc (°C) IV – Tc Relative luminous intensity I V Wavelength λ (nm) IF = 20 mA Ta = 25°C 600 540 640 620 580560 1.0 0.8 0.6 0.4 0.2 660 (typ.) (typ.) (typ.) Wavelength characteristic (typ.) (typ.)

TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) 2006-05-31 8 TLGE1100B IF = 20 mA Ta = 25°C 0.4 1.0 0.8 540 0.6 0.2 620600 580 560 0.1 −25 75 50 0 100 0.3 0.5 Ta = 25°C 1000 1 50 500 300 100 3 5 10 30 100 Ta = 25°C 100 1.9 2.0 Relative luminous intensity Forward voltage V F (V) IF – VF Forward current I F ( m A ) Forward current I F ( m A ) IV – IF Luminous intensity I V (mcd) Case temperature Tc (°C) IV – Tc Relative luminous intensity I V Wavelength λ (nm) Ta = 25°C Radiation pattern 30° 60° 90° 90° 30° 60° 80° 70° 50° 40° 20° 10° 70° 80° 50° 40° 20° 10° (typ.) (typ.) (typ.) Wavelength characteristic (typ.) (typ.)

TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) 2006-05-31 9 TLFGE1100B IF = 20 mA Ta = 25°C 0.4 1.0 0.8 540 0.6 0.2 620600 580 560 0.1 −25 75 50 0 100 0.3 0.5 Ta = 25°C 100 1.9 2.0 Relative luminous intensity Forward voltage V F (V) IF – VF Forward current I F ( m A ) Forward current I F ( m A ) IV – IF Luminous intensity I V (mcd) Case temperature Tc (°C) IV – Tc Relative luminous intensity I V Wavelength λ (nm) Ta = 25°C Radiation pattern 30° 60° 90° 90° 30° 60° 80° 70° 50° 40° 20° 10° 70° 80° 50° 40° 20° 10° 1 10 100 100 3 5 30 50 Ta = 25°C (typ.) (typ.) (typ.) Wavelength characteristic (typ.) (typ.)

TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) 2006-05-31 10 TLPGE1100B Ta = 25°C Radiation pattern 30° 60° 90° 90° 30° 60° 80° 70° 50° 40° 20° 10° 70° 80° 50° 40° 20° 10° 0.1 75 100 0.3 0.5 −25 0 50 Ta = 25°C 100 1.9 2.0 Relative luminous intensity Forward voltage V F (V) IF – VF Forward current I F ( m A ) Forward current I F ( m A ) IV – IF Luminous intensity I V (mcd) Case temperature Tc (°C) IV – Tc Relative luminous intensity I V Wavelength λ (nm) IF = 20 mA Ta = 25°C 0.4 1.0 0.8 520 0.6 0.2 600580 560 540 1 10 100 100 3 5 30 50 Ta = 25°C (typ.) (typ.) (typ.) Wavelength characteristic (typ.) (typ.)

TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) 2006-05-31 11 Packaging These LED devices are packed in an aluminum envelope with a silica gel and a moisture indicator to avoid moisture absorption. The optical characteristics of the devices may be affected by exposure to moisture in the air before soldering and they should therefore be stored under the following conditions: 1. This moisture proof bag may be stored unopene d within 12 months at the following conditions. Temperature: 5°C~30°C Humidity: 90% (max) 2. After opening the moisture proof bag, the devices should be assembled within 168 hours in an environment of 5°C to 30°C/60% RH or below. 3. If upon opening, the moisture in dicator card shows humidity 30% or above (Color of indication changes to pink) or the expiration date has passed, the devices should be baked in taping with reel. After baking, use the baked devices within 72 hours, but perform baking only once. Baking conditions: 60±5°C, for 12 to 24 hours. Expiration date: 12 months from sealing date, which is imprinted on the same side as this label affixed. 4. Repeated baking can cause the pee ling strength of the taping to change, then leads to trouble in mounting. Furthermore, prevent the devices from being destructed against static electricity for baking of it. 5. If the packing material of laminate would be broken , the hermeticity would deteriorate. Therefore, do not throw or drop the packed devices. Mounting Method Soldering

• Reflow soldering (example)
• The products are evaluated using above reflow soldering conditions. No additional test is performed exceed the condition (i.e. the condition more than (*)MAX values) as a evaluation. Please perform reflow soldering under the above conditions.
• Please perform the first reflow soldering with reference to the above temperature profile and within 168 h of opening the package.
• Second reflow soldering In case of second reflow soldering should be performed within 168 h of the first reflow under the above conditions. Storage conditions before the second reflow soldering: 30°C, 60% RH (max)
• Make any necessary soldering corrections manually. (only once at each soldering point) Soldering iron : 25 W Temperature : 300 °C or less Time : within 3 s
• If the products need to be performe d by other soldering method (ex. wave soldering), please contact Toshiba sales representative. Recommended soldering pattern 1.65 1.15 2.41 Unit: mm 1.65 60~120 s 10 s max 240°C max 4°C/s max 140~160°C 4°C/s max Time (s) Package surface temperature ( °C) Temperature profile for Pb soldering (example) Time (s) Package surface temperature ( °C) Temperature profile for Pb-free soldering (example) 150~180°C 4°C/s max 5 s max 260°C max 4°C/s max 230°C 60~120 s (*) (*) (*) (*) (*) (*) (*) (*) max(*) max(*) max(*) 30~50s max(*) max(*)

TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) 2006-05-31 12 Cleaning When cleaning is required after soldering, Toshiba recommends the following cleaning solvents. It is confirmed that these solvents have no effect on semiconductor devices in our dipping test (under the recommended conditions). In selecting the one for your actual usage, please perform sufficient review on washing condition, using condition and etc. ASAHI CLEAN AK-225AES : (made by ASAHI GLASS) KAO CLEAN TROUGH 750H : (made by KAO) PINE ALPHA ST-100S : (made by ARAKAWA CHEMICAL) TOSHIBA TECHNOCARE : (made by GE TOSHIBA SILICONES) (FRW-17, FRW-1, FRV-100) Precautions when Mounting Do not apply force to the plastic part of the LED under high-temperature conditions. To avoid damaging the LED plastic, do not apply friction using a hard material. When installing the PCB in a product, ensure that the device does not come into contact with other cmponents. Tape Specifications 1. Product number format The type of package used for shipment is denoted by a symbol suffix after the product number. The method of classification is as below. (this method, however does not apply to products whose electrical characteristics differ from standard Toshiba specifications) (1) Tape Type: T14 (4-mm pitch) (2) Example 2. Tape dimensions Unit: mm Symbol Dimension Tolerance Symbol Dimension Tolerance t 0.3 ±0.05 A 0 2.9 ±0.1 F 3.5 ±0.05 B 0 3.7 ±0.1 D1 1.5 ±0.1 K 0 2.3 ±0.1 TLRE1100B (T11) Tape type Toshiba product No. P D1 F E W Polarity t D

TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) 2006-05-31 13 3. Reel dimensions Unit: mm 4. Leader and trailer sections of tape Note1: Empty trailer section Note2: Empty leader section 9 ± 0.3 180 +0 φ60 φ13 11.4 ± 1.0 2 ± 0.5φ44 (Note 1) Leading part: 190 mm (min) 40 mm or more (Note 2) 40 mm or more

TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) 2006-05-31 14 5. Packing form (1) Packing quantity Reel 2,000 pcs Carton 10,000 pcs (2) Packing form: Each reel is sealed in an aluminum pack with silica gel. 6. Label format (1) Example: TLRE1100B (T11) P / N : TOSHIBA TYPE TLRE1100B ADDC (T11) Q’TY 2,000 pcs Lot Number Key code for TSB 32C 2000 (RANK SYMBOL) Use under 5-30degC/60%RH within 168h SEAL DATE: [[G]]/RoHS COMPATIBLE DIFFUSED IN ***** *Y3804xxxxxxxxxxxxxxxxx* ASSEMBLED IN ***** (2) Label location Tape feel direction Label position Label position

• Reel • Carton
• The aluminum package in which the reel is supplied also has the label attached to center of one side.

TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) 2006-05-31 15

• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality an d reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inhe rent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within s pecified operating ranges as set forth in the most recent TOSHIBA products specific ations. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semicon ductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
• The TOSHIBA products listed in this document are inte nded for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunc tion or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control in struments, airplane or spaceship instruments, transportation instruments, traffic signa l instruments, combusti on control instruments, medical instruments, all types of safety devices, et c. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any down stream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. RESTRICTIONS ON PRODUCT USE