TLP907 TOSHIBA | Alldatasheet
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TOSHIBA TLP907,TLP907(LB) TOSHIBA PHOTOREFLECTIVE SENSORS INFRARED LED + PHOTODARLINGTON TRANSISTOR TLP907, TLP907 (LB) DETECTION OF START AND END MARKS ON VIDEO AND AUDIO TAPE TLP907 DETECTION OF VCR REEL ROTATION DETECTION OF INDEX WRITE-PROTECT AND PRESENCE OF DISK FOR FLOPPY DISK DRIVE TIMING DETECTION IN ELECTRONIC PRINTERS AND TYPEWRITERS. SS READING OF CAMERA FILM INFORMATION (DX KS. CODE) Sy V4 SSS @ Very small package : 2.6mm X 3.4mm (height 1.5 mm) TLP907 : Flat-lead type TLP907 (LB) : Small DIP e@ Short detection distance : Optimum distance 0.5mm~1.5mm TLP907 (LB) e High sensitivity : Ig =3mA (typ.) e Protected from external light by black mold BS package. e Ss XQ = HZ i | VX jj | } |} fi Weight : 0.05 g (typ.) 1 2002-03-13
TOSHIBA TLP907,TLP907(LB) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL | RATING Forward Current Forward Current Derating a ° _ co Pulse Forward Current (Note 1) | Ipp | 400-—=«|_ mA | Reverse Voltage a Collector-Emitter Voltage VCEO © |Emitter-Collector Voltage VECO
5 Collector Power Dissipation
& | Collector Power Dissipation 9, _ 9, | Derating (Ta > 25°C) aPo/"C 0.67 jmW/*C Gollesior Current ee Operating Temperature Range —25~85 Storage Temperature Range —30~10 (Note 1) : Pulse width = 100 ys, Repetitive frequency = 100 Hz OPTICAL AND ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL | TEST CONDITION a | Forward Voltage Tp = 10mA a VR=5V b= [= | 10l pa Peak Pmission Wavelength Ip=4mA D= [940 — [am |
5 Dark Current Ip cro) | Vcg = 16V, Ir =0 | — | — | 025] aa |
I ee ec TpeT | o5| 3 | 15 Vor = 2v, |TLPI7T | 45, — | 15 Current Current Ic Ip = 4mA. | TLP90T GLB) mA a TLP9OT , EB)| 05 — | 19] z TLPOO7 (0, LB)| 145] — | 5
5 TLPOO7 (Y, LB)| 45[ — | 15
Vcr = 2V, Ip=4mA Leakage Current ILEAK without reflector 0.25 | vA Collector-Emitter Saturation ke nies ic=cnn | — [| al v | Voo=5V,Io=10ma, | — | t00f — | 5 y HS Fall Time Le [Rr = 1006 [= 100 =] 2 2002-03-13
TOSHIBA TLP907,TLP907(LB) (Note 2) : Collector current test method ALUMINUM EVAPORATED ALUMINUM EVAPORATED Glass LILI Glass ds ai (1mm thickness) Ko »S I (1mm thickness) TLP907 TLP907 (LB) PRECAUTIONS e@ Soldering temperature : 260°C max Soldering time : 3s max TH 1.8mm 1.8mm Soldering The diagonally shaded part in the area diagrams on the left represent the TLP907 TLP907 (LB) soldering area. @ When forming the leads, be careful not to apply stress to the main body of the device (the resin part). Soldering must be performed after the leads have been formed. @ Collector current falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in conversion efficiency over time. The ratio fluctuation in collector current to fluctuation in infrared LED optical output is 1:1. Ic(t) _ Pow I¢ (0) Po (0) 3 2002-03-13
TOSHIBA TLP907,TLP907(LB) PACKAGE DIMENSIONS 11-4B1 Unit : mm 1 4 (cos) | 3 3 *] = er cd . 8 x 4 i 0.7202 o | : 40.5102 (2) | 0530.1 ane | q 02 Bs (): Reference value Weight : 0.05 g (typ.) PIN CONNECTION 1 4 1. Anode 2. Cathode 3. Collector 2 3 4, Emitter 4 2002-03-13
TOSHIBA TLP907,TLP907(LB) PACKAGE DIMENSIONS 11-4B101 Unit : mm (C05) 1 LI LI 4 aq (LUG slo otk * Lh (1.6) 410.25 to ne ba FI 4A b= 0.70.2 Hl : 4-0.540.2 | ca $2785 3.76-7.3 (_ ): Reference value Weight : 0.05 g (typ.) PIN CONNECTION 1 4 1. Anode 2. Cathode 3. Collector 2 3 4, Emitter 5 2002-03-13
TOSHIBA TLP907,TLP907(LB) Ip — Ta Pc - Ta sti tT ttt ty tt Ty oat ti tt ty tt oy es LCLOXALEETTETT TT T e LUIXN-ETET TTT TT 2 og LENT TT TTT TT 3s o _L NIT TTT TI
8 LITIN TTT TT 22 [| TINT TTT TT ey
52 \\ ee og | TT NTT TTT 58 ott TiN Tt tt ty i Nee ze See eNeeee a eee se ft TTT TTT KT TT gs CLLETTT TT ity ty ey i = Lili i iit itt tt | Atti tt tt it tt | 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 AMBIENT TEMPERATURE Ta (°C) AMBIENT TEMPERATURE Ta (°C) Irp - DR Ip - VF (typ.)
6 IMT f= Lo FAA
3 1000 ES puise wipt < 100 ps z ae Z/Zanen Boh é VELL 8 = 500 oy be \\/ / = soo A Tt “ 7/1} / ge OM I ANTI s ott} lA PAA | | | a Bisset ATR Ba, NS = A iy ae a BE 100 EHS 8 4 /* fA fe ft i Pee Eo ee ae a 2 TIASA//V I | ll = a | £ J VV
9 OTN IIE Cel LLPEAA [I | |
1b 10-2 10-1 10° os 1.0 ll 12 13 14 15 DUTY RATIO DR FORWARD VOLTAGE Vp (V) Ipp — VFP (typ.) Ic - Ir (typ) OO 20 wy | [sawere 1/1 LY te = 26° ie SESE SSS ee a ee a eee Penna AAA AAA =) 2s a SEEEEEEEEEEEEEEE § ACA ee EEE a CF 2 eS eee AS i ECC eee | 3 “CALA
2 LUTTHIT »-# oo LUTTE TUTTI TT}
08 1.0 12 14 16 18 20 22 24 26 28 3.0 1 3 10 30 100 300 PULSE FORWARD VOLTAGE Vpp (V) FORWARD CURRENT Ip (mA) 6 2002-03-13
TOSHIBA TLP907,TLP907(LB) 2, Ic — VCE (typ.) 1 VCE (sat) — Ta (typ.) [Tf kT TL mee | “EET ewan Peery TT Se so eT g “OO 2 Pe
2 BE 10]
FT lec =somm || e CH e tbe a2 J SE etTtTitTt tT N | Ey oa ne 5 ] oT po LT TT TT TTT EWN TY e --e eros Coo ee Se ee ee eeeeeeeeeaanee JILL EE 3 a 2 [ft COCECCCeeeeeee PATE EET TTT ot LLC OOP ‘mere 9 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE Vcg (V) Ic - Ta (typ.) Ip (cEo) - Ta (typ.) "9 =====Se=== VEST a 2 wLbLEEE EEE HEE Ss EE Ne uv A HE eM anenueases’ cote z Ss ~ELETT TTT | yy ss] | —| 2 ped 2 ——a ee ee 7 ae | | 5 Wie a es Oa pepe | pee Boffo | 6 Pee ee Z PCE 2 Ey Ppt | OA SS | TAZA
2 MESES SESS well WATT
oot} +} tp = 05ma ||] 10 20 30 40 50 «60 70 = 80 90 poy yy yy yy Ip=05mA TT] oo} | ETT AMBIENT TEMPERATURE Ta (°C) PIT ieee yey yyy wt EEL EEL EEL -40 -20 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (°C) 7 2002-03-13
TOSHIBA TLP907,TLP907(LB) +o SWITCHING CHARACTERISTICS | (typ.) tr, te — Ic (typ.) oj Noowsy FE eA —| SHIEH Yoons¥ a Soer=s I re of PP TP fe ing A es i Paes LY) ZR ee) 2 SS . =A ‘Fee 2 ost | At A ee a Ee po OAR a 2 aio oc CC Boa A a Coon Patio
2 OR 3 Ht at]
[PE . SSS ool — COTTE TSS wal TH TT | a oo TTIMIN FE ETTTTI (ey o4 03 1 3 10 COLLECTOR CURRENT Ic (mA) LOAD RESISTANCE Ry (kQ) SPECTRAL RESEONCE E CHARACTERISTICS 12, yp. SWITCHING TIME TEST CIRCUIT FAT ee | WJCCEEEEE _tK . “COCOA To wove COO na ae a SCOOT wel youn | FR
2 COPCOECC A ~-| Nhe
2 SCCOCCOECC eee alll [fe
e fo “IL J 2 “COCCUEEEENE ET an \\eSee een CO (COCCI 500 = 600 700 800 ©6900 ©1000 «1100 1200 WAVELENGTH A (nm) 8 2002-03-13
LB) 7,TLP907( TLP907, (typ. (ON IBA FostroN 25°C H TON Set Ta = 2 2V PN “TH oy foe pisTaNd 8 ae LL ri Ch AGIBHISIC ;“ooK YEH Co a atattens = 4mA 8 LT] CN [|| rT] CHARA | [ie =2V dl Ctl iY | r {| LT} 1] TE ae te 5 oo Loe LL] CL Cy PALE His 98 an HHH Coo LEI | | test fon ral g , Cit LN Col Co LA CT Reflection C 5 4 CO ne Pritt
5 TN { {| | Rates LL] S Lt] r{ NG 3
a a Ne [TT] Cre I zt aan € om 3 “AAA [TT] Tf] | Ej LE a STANCE g LIN a an COO = fit ING DIS ain CN on Ce ro ee ouow 5) 3 a Ne bef | | ie TION (tyr : HEEL snes Baaee 0. 8 D VCE = 5 || | | | LTT | 7 CHARA LT] = 4mA & TT | [ {Ty ] LT | 6 CARD LT] rT Ip line 4 “HALA 4 ce WND Test LL SW [] a ANI [I] TN Tt | [| = Hy 2 3 DEVICE a | XI r{_| TT] oh TWEEN DEVIC (typ) BMT rt ae rood CT “OSTANCE Be ‘ANCE z [| Ch wa CI | DISTAN DIST oy 90% g os TN TT | rt CTION DIST tion ratio 8 on mia ae CT Dee CTO ele paper 38 [|_| CLI ‘an CI | ss Oe waite a CT] rTT\\ [| | ae EERE ne ae pe aH] ‘FEES (PPC Paper 2 oo CL CINE CL cI "EEEEEEE SonP tic tape 3 yasesfansceace 4 Ee (©) Magnetic von 2 seameeunee TAC i patna g FOE Serene € tam ANN LY Vor = Fl Lit a 1G DISTANC! i oN Po “OS “cao ow & HEN [| IN Het r] S NY NS STIC! 5 oH | TANS DITIO! CTERI | i LT] © Ss T CON! HARA q@ card 2 al PN iH —- TBST COND! TION Tes 5 IN Xi oss OSITH POS! —
8 ATES i DETE Test car e
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UL Sern evice AN — ‘Ley 901) ANCE BETWE! a im —e @ DISTAN a ow al test ca soe ie Oe ic neute + Ratton rato $0 Test card : for whit 2002-03-13
TOSHIBA TLP907,TLP907(LB) RESTRICTIONS ON PRODUCT USE ooo7o7eac @ TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. @ The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. @ Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 10 2002-03-13