TLP621_V01 TOSHIBA | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 10
Technical content
TLP621,TLP621−2,TLP621−4 2002-09-25 1 TOSHIBA Photocoupler GaAs Ired & Photo −Transistor Programmable Controller AC / DC−Input Module Solid State Relay The TOSHIBA TLP621, −2 and −4 consists of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP621−2 offers two isolated channels in an eight lead plastic DIP , which the TLP621−4 provides four isolated channels in a sixteen plastic DIP. /Gb7/G20Collector−emitter voltage: 55 V (min.) /Gb7/G20Current transfer ratio: 50% (min.) Rank GB: 100% (min.) Pin Configurations (top view) TLP621 TLP621-2 TLP621-4 1 1 1 2 2 2 4 4 3 3 8 9 1: Anode 2: Cathode 3: Emitter 4: Collecto r 1, 3: Anode 2, 4: Cathode 5, 7: Emitter 6, 8: Collector 1, 3, 5, 7: Anode 2, 4, 6, 8: Cathode 9, 11, 13, 15: Emitter 10, 12, 14, 16: Collector TOSHIBA 11 −5B2 Weight: 0.26 g TOSHIBA 11 −10C4 Weight: 0.54 g TOSHIBA 11 −20A3 Weight: 1.1 g Unit in mm
TLP621,TLP621−2,TLP621−4 2002-09-25 2
- Current Transfer Ratio Current Transfer Ratio (%) (IC / IF) IF = 5mA, VCE = 5V, Ta = 25°CType Classi/G2d/G20 fication Min. Max. Marking Of Classification (None) 50 600 Blank, Y, Y ■, G, G■, B, B■, GB Rank Y 50 150 Y, Y ■ Rank GR 100 300 G, G ■ Rank BL 200 600 B, B ■ TLP621 Rank GB 100 600 G, G ■, B, B■, GB (None) 50 600 Blank, GR, BL, GB TLP621/G2d2 TLP621/G2d4 Rank GB 100 600 GR, BL, GB *1: Ex. rank GB: TLP621 (GB) (Note) Application type name for certification test, please use standard product type name, i.e. TLP621 (GB): TLP621 TLP621/G2d2 (GB): TLP621/G2d2 Made In Japan Made In Thailand UL recognized E67349 *2 E152349 *2 BSI approved 6508, 7445 *3 6505, 7445 *3 SEMKO approved 9735090 / 01 *4 ― *2 UL1577 *3 BS EN60065: 1994, BS EN60950: 1992 *4 EN60950 (approved is TLP621 only)
TLP621,TLP621−2,TLP621−4 2002-09-25 3 /Gb7/G20Option (D4) type VDE approved: DIN VDE0884 / 06.92, certificate no. 68384 Maximum operating insulation voltage: 890 VPK Highest permissible over voltage: 8000 VPK (Note) When a VIDE0884 approved type is needed, please disignate the “Option (D4)” 7.62 mm pich 10.16 mm pich standard type (LF2) type /Gb7/G20Creepage distance : 6.4 mm (min.) 8.0 mm (min) Clearance : 6.4 mm (min.) 8.0 mm (min) Insulation thickness : 0.4 mm (min.) 0.4 mm (min)
TLP621,TLP621−2,TLP621−4 2002-09-25 4 Maximum Ratings (Ta = 25°C) Rating Characteritic Symbol TLP621 TLP621/G2d2 TLP621/G2d4 Unit Forward current I F 60 50 mA Forward current derating ∆IF /°C /G2d0.7 (Ta > 39°C) /G2d0.5 (Ta = 25°C) mA /°C Pulse forward current I FP 1 (100µs pulse, 100pps) A Power dissipation P D 100 70 mW Power dissipation derating ∆PD /°C /G2d1.0 /G2d0.7 mW /°C Reverse voltage V R 5 V LED Junction temperature T j 125 °C Collector/G2demitter voltage V CEO 55 V Emitter/G2dcollector valtage V ECO 7 V Collector current I C 50 mA Collector power dissipation (1 circuit) PC 150 100 mW Collector power dissipation derating (1 circuit, Ta ≥ 25°C) ∆PC /°C /G2d1.5 /G2d1.0 mW /°C Detector Junction temperature T j 125 °C Storage temperature range T stg /G2d55~125 °C Operating temperature range T opr /G2d55~100 °C Lead soldering temperature T sol 260 (10 s) °C Total package power dissipation P T 250 150 mW Total package power dissipation derating (Ta ≥ 25°C) ∆PT /°C /G2d2.5 /G2d1.5 mW /°C Isolation voltage (Note 1) BV S 5000 (AC, 1min., R.H. ≤ 60%) Vrms (Note 1) Device considered a two terminal: LED side pins shorted together, and detector side pins shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage V CC ―/G20 5 24 V Forward current I F ― 16 20 mA Collector current I C ―/G20 1 10 mA Operating temperature T opr /G2d25 ―/G20 85 °C
TLP621,TLP621−2,TLP621−4 2002-09-25 5 Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage V F I F = 10 mA 1.0 1.15 1.3 V Reverse current I R V R = 5 V — — 10 µA LED Capacitance C T V = 0, f = 1 MHz — 30 — pF Collector/G2demitter breakdown voltage V(BR) CEO IC = 0.5 mA 55 — — V Emitter/G2dcollector breakdown voltage V(BR) ECO IE = 0.1 mA 7 — — V VCE = 24 V — 10 100 nA Collector dark current I CEO VCE = 24 V, Ta = 85°C — 2 50 µA Detector Capacitance (collector to emitter) CCE V = 0, f = 1 MHz — 10 — pF Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIn. Typ. Max. Unit 50 — 600 Current transfer ratio I C / IF IF = 5 mA, VCE = 5 V Rank GB 100 — 600 — 60 — Saturated CTR I C / IF (sat) IF = 1 mA, VCE = 0.4 V Rank GB 30 — — IC = 2.4 mA, IF = 8 mA — — 0.4 — 0.2 — Collector/G2demitter saturation voltage VCE (sat) IC = 0.2 mA, IF = 1 mA Rank GB — — 0.4 V Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Capacitance (input to output) C S VS = 0, f = 1 MHz — 0.8 — pF Isolation resistance R S VS = 500 V 1×10 12 1014 — Ω AC, 1 minute 5000 — — AC, 1 second, in oil — 10000 — Vrms Isolation voltage BV S DC, 1 minute, in oil — 10000 — V dc
TLP621,TLP621−2,TLP621−4 2002-09-25 6 Switching Characteristics (Ta = 25°C) Characterictic Symbol Test Condition Min. Typ. Max. Unit Rise time t r — 2 — Fall time t f — 3 — Turn/G2don time t on — 3 — Turn/G2doff time t off VCC = 10 V, IC = 2 mA RL = 100Ω — 3 — µs Turn/G2don time t ON — 2 — Storage time t S — 15 — Turn/G2doff time t OFF RL = 1.9 kΩ (Fig.1) VCC = 5 V, IF = 16 mA — 25 — µs Fig. 1 Switching time test circuit IF RL VCC VCE VCE tON IF tOFF VCC 4.5V 0.5V tS
TLP621,TLP621−2,TLP621−4 2002-09-25 7 TLP621 I F – Ta Ambient temperature Ta (°C) Allowable forward current IF ( m A ) -20 0 20 40 60 80 100 100 120 TLP621-2 TLP621-4 I F – Ta Ambient temperature Ta (°C) Allowable forward current IF (mA) 100 -20 0 20 40 60 80 100 120 TLP621 P C – Ta Ambient temperature Ta (°C) Allowable collector power dissipation P C (mW) 240 -20 160 0 60 100 120 200 120 20 40 80 TLP621-2 TLP621-4 P C – Ta Ambient temperature Ta (°C) Allowable collector power dissipation P C (mW) 120 -20 0 40 100 20 60 80 100 120 TLP621 I FP – DR Duty cycle ratio DR Pulse forward current I FP (mA) 3000 3 10-3 10-2 10 -1 3 300 100 1000 500 3 3 100 Pulse width ≤ 100µs Ta = 25°C TLP621-2 TLP621-4 I FP – DR Duty cycle ratio DR Pulse forward current I FP (mA) 3000 1000 500 300 100 3 10-3 3 10-2 3 100 Pulse width ≤ 100µs Ta = 25°C 10-1 3
TLP621,TLP621−2,TLP621−4 2002-09-25 8 ∆VF / ∆Ta – IF Forward current I F (mA) Forward voltage temperature coefficent ∆VF / ∆Ta (mV /°C) -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.1 0.3 31 0 30 ID – Ta Ambient temperature T a (°C) Dark current I D (µA) 0 40 80 120 160 101 100 10-1 10-2 10-3 10-4 VCE = 24V 10V I F – VF Forward voltage V F (V) Forward current I F (mA) 100 0.1 0.5 0.3 Ta = 25°C I FP – VFP Pulse forward voltage V FP (V) Pulse forward current I FP (mA) 1000 500 300 100 2.4 Pulse width ≤ 10µs Repetitive Frequency = 100Hz Ta = 25°C IC – VCE Collector-emitter voltage V CE (V) Collector current I C (mA) 0 2 4 861 0 50mA 30mA 20mA 15mA 10mA IF = 5mA PC (MAX.) Ta = 25°C IC – VCE Collector-emitter voltage V CE (V) Collector current I C (mA) 50mA 40mA 30mA 20mA 10mA 5mA IF = 2mA 5 Ta = 25°C
TLP621,TLP621−2,TLP621−4 2002-09-25 9 IC / IF – IF Foward current I F (mA) Current transfer ratio I C / IF (%) 500 300 100 0.3 13 10 30 100 Ta = 25°C VCE = 5V VCE = 0.4V Sample B Sample A VCE (sat) – Ta Ambient temperature T a (°C) Collector-emitter saturation Voltage V CE (sat) (V) -20 0 20 40 60 80 100 0.20 0.16 0.12 0.08 0.04 IF = 5mA IC = 1mA Switchingtime – RL Load resistance R L ( k Ω) Switching time (µs) 1000 500 300 100 1 3 10 30 100 300 Ta = 25°C IF = 16mA VCC = 5V tOFF ts tON IC – IF Forward current I F (mA) Collector current I C (mA) 100 0.5 0.3 1 3 10 30 100 Sample A Sample B 0.3 0.1 0.05 0.03 Ta = 25°C VCE = 5V VCE = 0.4V IC – Ta Ambient temperature T a (°C) Collector current I C (mA) 100 -20 0 20 40 80 100 25mA 10mA 5mA 1mA IF = 0.5mA 0.5 0.3 0.1 VCE = 5V
TLP621,TLP621−2,TLP621−4 2002-09-25 10 /Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. /Gb7/G20The products described in this document are subject to the foreign exchange and foreign trade laws. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EBCRESTRICTIONS ON PRODUCT USE