TLP621-2

TLP621 TOSHIBA | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 10

Technical content

TOSHIBA TLP621,TLP621-2,TLP621-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP621, TLP621-2, TLP621-4 i ' PROGRAMMABLE CONTROLLER Unit in mm z AC/DC -INPUT MODULE ae TLP621 SOLID STATE RELAY |_| Bf 4s. Te The TOSHIBA TLP621, -2, and -4 consists of a photo-transistor 4get02s S | optically coupled to a gallium arsenide infrared emitting diode. . eo The TLP621-2 offers two isolated channels in an eight lead a 1240.19 3 84 plastic DIP, which the TLP621-4 provides four isolated channels °. *- 3 2 in a sixteen plastic DIP. 5) | ras-e00, 2sdz0.25 © © Collector-Emitter Voltage : 55V (Min,) TOSHIBA __11-5B2 Weight : 0.26g @ Current Transfer Ratio : 50%(Min.) Rank GB: 100% (Min.) j TLP621-2 1234 PIN CONFIGURATIONS (TOP VIEW) acozoas 28) reot02s TLP621 TLP621-2 TLP621-4 Ne 1 4 1g os iq 16 s2z0s5) is cal 3 (| 3 4 ~ i : ' 3] | 295~sa0 2 20 hy 20 his asitozs 8 ANODE 5 : Oe OE sq he 3c his TOSHIBA 11-10C4 3: EMITTER | 3 c| | 3 (| Weight : 0.54g 4 : COLLECTOR 4q m 40 1113 Se Pee . TLP621-4 1, 3 : ANODE 3 2, 4 : CATHODE 5q p12 3 5, 7: EMITTER | c| 7. S78 6, 8 : COLLECTOR 7 6q hu 2 roe2z025 , | ze22025 7q [10 Fe Hy — sq Lo vetclos y2tors)§ 95-009 1,3,5,7 : ANODE 00 9,11,13,15 : EMITTER TOSHIBA _11-20A8 10,12, 14,16 : COLLECTOR Weight : lig 1 2001-06-01

TOSHIBA TLP621,TLP621-2,TLP621-4 ¢ Current Transfer Ratio (CURRENT TRANSFER RATIO CLASSI. (%) (Ig / Ip) TYPE FICATION MARKING OF *] Ip=5mA, VoE=5V, Ta=25°C CLASSIFICATION a mupez1 | RenkGR [100 | s00 | Gas [Rank BL | 200) oo ne SS~S [Rankop | 100 | 60 [Gos B BGR mupe2i-2 | (None) [50 | 600 | BLANK, GR, BL GB Tupezi-t | Rank GB | 100 | 600‘ GR, BL, GB *1 : Ex. Rank GB : TLP621 (GB) (Note) Application type name for certification test, please use standard product type name, i.e. TLP621(GB) : TLP621 TLP621-2 (GB) : TLP621-2 } MADE IN JAPAN MADE IN THAILAND Oi, Recognized | HOTSID 7 6508, 7445 *3 [6505, 7445 *3 [SEMKO Approved lovaso90/0i__ 4] —=s SCS #2. ULI577 *3 BS EN60065 : 1994, BS EN60950 : 1992 *4 EN60950 (Approved is TLP621 only) 2 2001-06-01

TOSHIBA TLP621,TLP621-2,TLP621-4 @ Option (D4) type VDE Approved : DIN VDE0884/ 06.92, Certificate No. 68384 Maximum Operating Insulation Voltage : 890VpK Highest Permissible Over Voltage : 8000VpK (Note) When a VIDE0884 approved type is needed, please disignate the “Option (D4)” 7.62mm pich 10.16mm pich standard type | (LF2) type © Creepage Distance: 6.4mm(Min.) | 8.0mm (Min) Clearance : 6.4mm (Min.) 8.0mm (Min) Insulation Thickness: 0.4mm (Min.) | 0.4mm (Min) 3 2001-06-01

TOSHIBA TLP621,TLP621-2,TLP621-4 MAXIMUM RATINGS (Ta = 25°C) RATING CHARACTERISTIC SYMBOL TLP621 TLP621-2 UNIT TLP621-4 Forward Current [mw | «| som Forward Current Derating Alp /°C -0.7 (Ta>39°C) | -0.5 (Ta=25°C) a Pulse Forward Current 1(100ys pulse, 100pps) | Power Dissipation ee Power Dissipation Derating aPp/°6 Reverse Voltage Junction Temperature Collector-Emitter Voltage VcEo w | Emitter-Collector Voltage Veco & | Oollector Current © | Collector Power Dissipation 2 | Circuit) 4 | Collector Power Dissipation Derating oy oy 2 | @ Circuit, Ta= 25°C) aPel’e mas “1 mw/°c Junction Temperature Storage Temperature Range —55~125 Operating Temperature Range —55~100 Lead Soldering Temperature 260 (10s) ‘otal Package Power Dissipation Total Package Power Dissipation Derating 6 ° (Ta= 25°C) APP /°C -2.5 -15 mW/°C Tsolation Voltage (ote 1) 5000(AC, Imin., R.H.< 60%) (Note 1) Device considered a two terminal : LED side pins shorted together, and DETECTOR side pins shorted together. RECOMMENDED OPERATING CONDITIONS Supply Voltage | veo [| — [| 5 | ~# [ v | Forward Current | mw | — | i | 20 | ma | Collector Current [wo | — | a [wo | ma | Operating Temperature | Tr | -25 | — [| 35 [ c_| 4 2001-06-01

TOSHIBA TLP621,TLP621-2,TLP621-4 INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta = 25°C) @ [Forward Voltage | Ve | r=t0mA to | as | a | Vv | [Capacitance | Or v=o toi | — | a0 | — | or | Collector-Emitter _ © | Emitter-Collector

5 Breakdown Voltage V (BR) ECO] TR=01mA 7 v

& | Collector Dark Current Iczo | = ; e Von=24v, Ta=asrc | — [2] 50 | pa | Capacitance (Collector an pe ee oo ee COUPLED ELECTRICAL CHARACTERISTICS (Ta = 25°C) = = Saturated CTR Io/t Ip=imA, Vop=04v | — | 60 | — | ose Rank GB [30 | — | — | . Ig=24mA,tp=8ma | — | — | oa | Collector-Emitter Vv | — | o2| — | Vv Saturation Voltage CE (sat) | I¢=0.2mA, Ip=1mA . rank ob [=] — [aa ISOLATION CHARACTERISTICS (Ta = 25°C) Capacitance (Input to Output) Vg=0, f=1MHz | — | os] — | oF | Vg=500V laxaof so] — | oa | [x61 minute [5000 [= [= Isolation Voltage BVg | AC, 1 second, in oil | — [10000] — |'™s [| DC, 1 minute, in oil | — [10000] — | Vac | 5 2001-06-01

TOSHIBA TLP621,TLP621-2,TLP621-4 SWITCHING CHARACTERISTICS (Ta = 25°C) |= | 2] -| Fall Time Voo=10v, Io=2ma | — [| 3 | — J : RL=1.9k0 (Fig.1) Fig.1 SWITCHING TIME TEST CIRCUIT ew JF Li I, Vi 'F RL cc ts veg VCE VCE . 0.5V ton toFF 6 2001-06-01

TOSHIBA TLP621,TLP621-2,TLP621-4 TLP621 Ip - T. peat coco coseeeeee “COTTE ott Titi ttt tt € og TIT Pe e “CCT eee 8 o ttt TET TTP ee

23 PTT TTT NEE ETT a2 Lit ity yt ey yy ey

88 COPPELL ge COCoPN EE

fe “TTT TTT TTT NET e Ee “TT TTT TT NYT TT 2 ttt tt Tt iINt 1 2 of LITT tT | | NET TT EI 20] y EI 20) ~—] - ~LLT TTT Ere iy ey s [iti Tit tit iN | 3 oAtLITITTITi titi tt) 3 oLLLITitTiti ti it) -20 0 2 40 6 80 100 120 -2 0 2 40 Gd 80 100 120 AMBIENT TEMPERATURE Ta (C) AMBIENT TEMPERATURE Ta (°C) TLP621-2 nan reo Pc - Ta 9, re eatd Pc - Ta PT TT TTT Ty Tt tt yy “TTT ee See Boop titi t tt it i tt | gs LLITITT TIT ttt tt gs [TTT TAPE TT Tye eee e8 PPP NET ge Fee Be SERRE eee re a ELEN Ee se TL ITT TTT NET TT Tt Se LETT TTT TIN eT TTT = N 8s N a TPN 3 CON s4 Ti Ti TTT iP ing Te ge LITT TTT IAT TI 3 wo ttt ttt Tit N Ty 3 opt ttt TTT tT Tin ty LT} TPT Try yyy yr] TTT PTT yy Pry yy ALLITITi tit itt | otlLlLITTIT Titi tT itt | 20 0 20 40 60 80 100 120 20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE Ta (C) AMBIENT TEMPERATURE Ta (CC) = 2 TLP621-2 = mp Ipp — D & Tupe2i-4_—sIpp - Dy «no till TTT | =25¢ | oe z a SS Sees — ee ee esl | 3 a th eee e ee = soo tHE Sa z soo ESS eg et eee ee TT 2 ao 2 a z psp 2) SESH OSH ONS eet a eel, Sai ete tt | 8 sore a CTI FI Ce Al : eo Cott oA LMM | TIVITY TET voL III TTI VPI FT TTT 3 1° 3 10% 3 10% 3 10° 3 0° 8 07 3 WW 8 10° DUTY CYCLE RATIO DR DUTY CYCLE RATIO. DR 7 2001-06-01

TOSHIBA TLP621,TLP621-2,TLP621-4 Ip - VF AVE/ATa — Ip 100) eee] =2==—==_== Coot oon oof ee i a a A | e -PrPrrrrryrrr Bp coo SET Po See ew | = EE Sc cecerscccceee Saseeeee

8 Peper Be Se

pif} i | if | | é r | BSSSeSeseses | CTH Bs ae oni oi BAA eC ol LTT | ZTT TT | TY 8 aL 1 Li i 04 06 0.8 1.0 12 14 16 On 03 1 3 10 30 FORWARD VOLTAGE Vp (V) FORWARD CURRENT Ip (mA) +00 Ipp — VFP Ip - Ta soo] PULSE wT stOys | 10 ee S| REPE’ 4 SS A Eh TAS At | | | 3 = = . See Se a ee ee eee ee e/a sop Ss eS z a | E A ee d LEE Ty Tt ttt ott tt tt tt 0 0.4 08 12 1.6 2.0 24 0 40 80 120 160 PULSE FORWARD VOLTAGE Vrp (V) AMBIENT TEMPERATURE Ta (°C) Ic - VCE Ic - VCE 80) Lr PF FAA) ipa] gatt it tt i | eee o LL [Nem | P| TT | o Lee : vom} P| et fete p+ ee . Oe eA be TT Be an Ae ce s Lee SHH Goo eer ee g Aol te fe) SSS

8 VI TT TTT TTT | 8 WoT

0 2 4 6 8 10 0 0.2 04 0.6 08 10 12 14 COLLECTOR-EMITTER VOLTAGE Vcg (V) COLLECTOR-EMITTER VOLTAGE Vcr (V) 8 2001-06-01

TOSHIBA TLP621,TLP621-2,TLP621-4 Ic - Ir . Ic/Ip - IF 100) See] 5 Ta=25°C eae 7 900) sampue AST NC TTT 50] vopssv ES 5° | | sol w= Nowwoer AP ear 2 soe TAR] NTI

2 Hip g 100 “| Ell

2 UU | || a etn catitieae acti

2 ESE sawpur a pa ae a |

6 Str A eZ ee

2 Coo AA Fy ce

2 Mi ane CTT = ot iiiil | |||] — vee-sv

g “ERS ESSE ---- ver=04v s LI Vi PU : ay oe & ‘EES 3 os 1 3 1030 100 Bosh Ff FOWARD CURRENT Ip (mA) 3 os ZA oy S AA A Vox (sat) - Ta 0.20; os “ee Po [7p c= 1 ee eee 38 016 pT Et TTT ey coi Pett ti = gE ee 0.03! 3 ai row CARHENE mw Boe eee 22 0.08 ge fii ty Ti yy tT yyy on ee 100 eo ETT Ti yey yyy yy | Seeger] § Gerry a es | of toma AMBIENT TEMPERATURE Ta (C) > Ae StH} 2 oe SWITCHINGTIME — Ry bmA | 1000; ee 7 ee 500) p=t6ma Fa Se ee ool Vecesv. LL

2 Jee eee cor |

5 Da <==. == . SESS 3 ost 4 a E | ee Bp ceees 2 ote Co SSeS eee =88 Bee I I ol LETT TTT T TEAS CSS -20 ) 20 40 60 80 100 es 3 pn AMBIENT TEMPERATURE Ta (0) po ton A CUTIE PETIT | 1 3 10 30 100 300 LOAD RESISTANCE Ry (kQ) 9 2001-06-01

TOSHIBA TLP621,TLP621-2,TLP621-4 RESTRICTIONS ON PRODUCT USE ooov07e8¢ @ TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. @ The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. @ Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. @ The products described in this document are subject to the foreign exchange and foreign trade laws. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 10 2001-06-01