TLP620-4

TLP620_07 TOSHIBA | Alldatasheet

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TLP620,TLP620−2,TLP620−4 2007-10-01 1 TOSHIBA Photocoupler GaAs Ired & Photo −T ransistor TLP620, TLP620−2, TLP620−4 Programmable Controllers AC / DC−Input Module Telecommunication The TOSHIBA TLP620, −2 and −4 consists of a photo−transistor optically coupled to two gallium arsenide infrared emitting diode connected in inverse parallel. The TLP620−2 offers two isolated channels in an eight lead plastic DIP, while the TLP620−4 provides four isolated channels in a sixteen plastic DIP.

• Collector−emitter voltage: 55V (min.)
• Current transfer ratio: 50% (min.) Rank GB: 100% (min.) Pin Configurations (top view) TLP620 1 : ANODE CATHODE 2 : CATHODE ANODE 3 : EMITTER 4 : COLLECTOR TLP620-2 1, 3 : ANODE CATHODE 2, 4 : CATHODE ANODE 5, 7 : EMITTER 6, 8 : COLLECTOR TLP620-4 8 9 1, 3, 5, 7 : ANODE, CATHODE 2, 4, 6, 8 : CATHODE, ANODE 9, 11, 13, 15 : EMITTER 10, 12, 14, 16 : COLLECTOR TOSHIBA 11 −5B2 Weight: 0.26 g TOSHIBA 11 −10C4 Weight: 0.54 g TOSHIBA 11 −20A3 Weight: 1.1 g Unit in mm

TLP620,TLP620−2,TLP620−4 2007-10-01 2 Made In Japan Made In Thailand UL recognized E67349 *1 E152349 *1 BSI approved 7426, 7427 *2 7426, 7427 *2 *1 UL1577 *2 BS EN60065: 2002, BS EN60950-1: 2002

• Isolation voltage: 5000Vrms (min.)
• Option (D4) type VDE approved: DIN EN 60747-5-2, certificate no.40009302 Maximum operating insulation voltage: 890V PK Highest permissible over voltage: 8000V PK (Note) When an EN 60747-5-2 approved type is needed, please designate the “Option(D4)”.
• Creepage distance: 6.4mm (min.) Clearance: 6.4mm (min.) Insulation thickness: 0.4mm (min.) Absolute Maximum Ratings (Ta = 25°C) Rating Characteristic Symbol TLP620 TLP620−2 TLP620−4 Unit Forward current IF (RMS) 60 50 mA Forward current derating ΔIF / °C −0.7 (Ta ≥ 39°C) −0.5 (Ta ≥ 25°C) mA / °C Pulse forward current IFP 1 (100μs pulse, 100pps) A Power dissipation (1 circuit) PD 100 70 mW Power dissipation derating ΔPD / °C −1.0 −0.7 mW / °C LED Junction temperature Tj 125 °C Collector−emitter voltage VCEO 55 V Emitter−collector voltage VECO 7 V Collector current IC 50 mA Collector power dissipation (1 circuit) PC 150 100 mW Collector power dissipation derating (1 circuit) (Ta ≥ 25°C) ΔP Detector Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Operating temperature range Topr −55~100 °C Lead soldering temperature Tsold 260 (10s) °C Total package power dissipation PT 250 150 mW Total package power dissipation derating (Ta ≥ 25°C, 1 circuit) ΔP Isolation voltage BVS 5000 (AC, 1 min., RH ≤ 60%) Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

TLP620,TLP620−2,TLP620−4 2007-10-01 3 Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC ― 5 24 V Forward current IF (RMS) ― 16 20 mA Collector current IC ― 1 10 mA Operating temperature Topr −25 ― 85 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF I F = ±10mA 1.0 1.15 1.3 V Forward current IF V F = ±0.7V ― 2.5 20 μA LED Capacitance C T V = 0, f = 1MHz ― 60 ― pF Collector−emitter breakdown voltage V (BR) CEO IC = 0.5mA 55 ― ― V Emitter−collector breakdown voltage V (BR) ECO IE = 0.1mA 7 ― ― V VCE = 24V ― 10 100 nA Collector dark current ICEO VCE = 24V, Ta = 85°C ― 2 50 μA Detector Capacitance (collector to emitter) CCE V CE = 0, f = 1MHz ― 10 ― pF Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIn. Typ. Max. Unit 50 ― 600 Current transfer ratio IC / IF IF = ±5mA, VCE = 5V Rank GB 100 ― 600 ― 60 ― Saturated CTR IC / IF (sat) IF = ±1mA, VCE = 0.4V Rank GB 30 ― ― IC = 2.4mA, IF = ±8mA ― ― 0.4 ― 0.2 ― Collector−emitter saturation voltage VCE (sat) IC = 0.2 mA, IF = ±1 mA Rank GB ― ― 0.4 V Off−state collector current IC (off) V F = ± 0.7V, VCE = 24V ― 1 10 μA CTR symmetry IC (ratio) IC (IF = −5mA) / IC (IF = +5mA) 0.33 1 3 ―

TLP620,TLP620−2,TLP620−4 2007-10-01 4 Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Capacitance input to output CS VS = 0, f = 1MHz ― 0.8 ― pF Isolation resistance RS VS = 500V 1×10 ― Ω AC, 1 minute 5000 ― ― AC, 1 second, in oil ― 10000 ― Vrms Isolation voltage BVS DC, 1 minute, in oil ― 10000 ― V dc Switching Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Rise time tr ― 2 ― Fall time tf ― 3 ― Turn−on time ton ― 3 ― Turn−off time toff VCC = 10V IC = 2mA RL = 100Ω ― 3 ― μs Turn−on time tON ― 2 ― Storage time ts ― 15 ― Turn−off time tOFF RL = 1.9kΩ (Fig.1) VCC = 5V, IF = ±16mA ― 25 ― μs Fig. 1 Switching time test circuit IF RL VCC VCE VCE tON IF tOFF VCC 4.5V 0.5V tS

TLP620,TLP620−2,TLP620−4 2007-10-01 5 TLP620-2 TLP620-4 I F – Ta Ambient temperature Ta (°C) Allowable forward current IF (RMS) (mA) 100 −20 0 20 40 60 80 100 120 TLP620 P C – Ta Ambient temperature Ta (°C) Allowable collector power dissipation P C (mW) 240 −20 160 0 60 100 120 200 120 20 40 80 TLP620-2 TLP620-4 P C – Ta Ambient temperature Ta (°C) Allowable collector power dissipation P C (mW) 120 −20 0 40 100 20 60 80 100 120 TLP620 I FP – DR Duty cycle ratio D R Allowable pulse forward current IFP (mA) 3000 3 10−3 10−2 10−1 3 300 100 1000 500 3 3 100 Pulse width≦100μs Ta = 25°C TLP620-2 TLP620-4 I FP – DR Duty cycle ratio D R Allowable pulse forward current IFP (mA) 3000 1000 500 300 100 3 10−3 3 10−2 3 100 Pulse width≦100μs Ta = 25°C 10−1 3 TLP620 I F – Ta Ambient temperature Ta (°C) Allowable forward current IF (RMS) (mA) −20 0 20 40 60 80 100 100 120

TLP620,TLP620−2,TLP620−4 2007-10-01 6 ΔVF / ΔTa – IF Forward current I F ( m A ) Forward voltage temperature coefficient ΔVF / ΔTa (mV / °C) −2.8 −2.4 −2.0 −1.6 −1.2 −0.8 −0.4 0.1 0.3 3 10 30 I D – Ta Ambient temperature Ta (°C) Collector dark current I D (μA) 0 40 80 120 160 101 100 10−1 10−2 10−3 10−4 VCE = 24V I FP – VFP Pulse forward voltage V FP (V) Pulse forward current I FP (mA) 1000 500 300 100 2.4 Pulse width≦10μs Repetitive Frequency = 100Hz Ta = 25°C Collector current I C (mA) I C – VCE Collector-emitter voltage V CE ( V ) Collector current I C (mA) 0 2 4 8 6 10 Ta = 25°C 50mA 10mA 30mA 20mA 15mA IF = 5mA PC (MAX.) I F – VF Forward voltage V F (V) Forward current I F ( m A ) 100 0.1 0.5 0.3 Ta = 25°C I C – VCE Collector-emitter voltage V CE ( V ) Ta = 25°C 50mA 40mA 30mA 20mA 10mA 5mA IF = 2mA

TLP620,TLP620−2,TLP620−4 2007-10-01 7 V F – IF Forward voltage V F (V) Forward voltage I F ( m A ) −20 −40 −2 −1 0 1 2 3 Ta = 25°C 500 300 0.3 1 3 10 30 100 Ta = 25°C VCE = 5V VCE = 0.4V 100 Sample B Sample A I C / IF – IF Forward current I F ( m A ) Current transfer ratio IC / IF (%) I C – VF Forward voltage V F (V) Collector current I C ( m A ) 100 0.03 0.8 1.3 0.5 0.3 0.1 0.05 0.01 0.9 1.0 1.1 1.2 Ta = 25°C VCE = 0.4V I C – IF Forward current I F ( m A ) Collector current I C ( m A ) 100 0.5 0.3 100 0.3 0.1 0.05 0.03 1 3 10 30 Ta = 25°C VCE = 5V VCE = 0.4V Sample B Sample A

TLP620,TLP620−2,TLP620−4 2007-10-01 8 I C – Ta Ambient temperature Ta (°C) 100 −20 0 20 40 80 100 0.5 0.3 0.1 VCE = 5V IF = 25mA 0.5 Collector current I C ( m A ) 1000 500 300 100 1 3 10 30 100 Ta = 25°C IF = 16mA VCC = 5V tOFF ts tON RL – Switching Time Load resistance R L ( k Ω) Switching time ( μs) V CE (sat) – Ta Ambient temperature Ta (°C) Collector-emitter saturation voltage V CE (sat) (V) −20 0 20 40 60 80 100 0.20 0.16 0.12 0.04 0.24 0.08 IF = 5mA IC = 1mA IF VCC RL VCE RBE IF VCE tON ts tOFF 0.5V 4.5V5V ton, toff, ts Test condition

TLP620,TLP620−2,TLP620−4 2007-10-01 9 RESTRICTIONS ON PRODUCT USE 20070701-EN

• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
• The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dus t or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically.
• Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.