TLP620 TOSHIBA | Alldatasheet

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TOSHIBA TLP620,TLP620-2,TLP620-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP620, TLP620-2, TLP620-4 i i PROGRAMMABLE CONTROLLERS Unit in mm AC/DC-INPUT MODULE af TLP620 ; {8 TELECOMMUNICATION LE T G 2 4584025% pep sons The TOSHIBA TLP620, -2 and -4 consists of a photo-transistor a optically coupled to two gallium arsenide infrared emitting diode 3 | connected in inverse parallel. r2sors}{l (1S | ozs The TLP620-2 offers two isolated channels in an eight lead plastic essa FH 785-280 DIP, while the TLP620-4 provides four isolated channels in a 2stz02s © sae Weight : 0.26; © Collector-Emitter Voltage : 55V(Min.) oe i e@ Current Transfer Ratio : 50% (Min.) e768 6 TLP620-2 Rank GB : 100% (Min.) : T2434 PIN CONFIGURATIONS (TOP VIEW) Oe pees TLP620 TLP620-2 TLP620-4 taza Js 1g 4 1g O8 iq H 16 oszor l oes eee), ER, LEY shige 2a 3 2g 7 2q 15 “ee 1: ANODE TOSHIBA 11-1004 * CATHODE 3q he 3q 14 Weight : 0.54g 2 : CATHODE Ee (| Ee (| ANODE 4q O5 4q 13 Be uve TLP620-4 3 : EMITTER 8 4: COLLECTOR 1,3: ANODE HE CATHODE 5q H 12 TE U7 2, 4: CATHODE Ee 4 ay 5.1: ANODE 6d hu 19627025 El pase 6, 8: COLLECTOR — 7q 1110 oszodl | 0.25000, asszoas ie 8q 9 2, 4, 6, 8 : CATHODE, ANODE TOSHIBA 11-2043 9,11, 13,15 : EMITTER Weight : 11g 10, 12, 14, 16 : COLLECTOR 1 2001-06-01

TOSHIBA TLP620,TLP620-2,TLP620-4 fe MADE IN JAPAN MADE IN THAILAND UL Recognized E67349 *1 | E152349 *1 BSI Approved 7426, 7427 *2 | 7426, 7427 *2 *1 UL1577 *2 BS EN60065 : 1994, BS EN60950 : 1992 e@ Isolation Voltage : 5000Vyms (Min.) @ Option (D4) type VDE Approved : DIN VDE0884/ 06.92, Certificate No. 68384 Maximum Operating Insulation Voltage : 890VpK Highest Permissible Over Voltage : 8000VpK (Note) When a VDE0884 approved type is needed, please designate the “Option (D4) ”. @ Creepage Distance : 6.4mm (Min.) Clearance : 6.4mm (Min.) Insulation Thickness : 0.4mm (Min.) MAXIMUM RATINGS (Ta = 25°C) RATING HAI 'TERISTI SYMBOL NIT CHARACTERISTIC i 0. Tpen0 TLP620-2 U TLP620-4 Forward Current Trams) | 60 | ——*+0 | ma Forward Current Derating Alp/°C —0.7 (Ta= 39°C) —0.5 (Ta= 25°C) Q [Pulse Forward Current [ Irp | 1(100y8 pulse, 100pps) 5 [Power Dissipation (L Circuit) Power Dissipation Derating | aPp/*C_|__-L0_| 0.7 | mw /"C| Collector Bmitier Voltage VenO Emitter Collector Voltage Veco [Collector Current & [Collector Power Dissipation oO & | Circuit) Pc 150 100 mW © |Collector Power Dissipation °, © [Junction Temperature Storage Temperature Range —55~125 Operating Temperature Range —55~100 Lead Soldering Temperature 260 (10s) Total Package Power Dissipation Total Package Power Dissipation oj 9, Derating (Ta=25°C, 1 Circuit) apr/°C ~25 =15 mw /°C Isolation Voltage 5000(AC, 1 min., RH=60%) 2 2001-06-01

TOSHIBA TLP620,TLP620-2,TLP620-4 RECOMMENDED OPERATING CONDITIONS Supply Voltage veo = st av | Forward Current | Trews) | — | 16] 20] ma Collector Current ric | — | 1} 10] ma | [Operating Temperate | Toe | 25] — | #5] © INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta = 25°C) & Forward Current | Ip _|Vp=#07v | — | 25] 90 | 2A | V=0, f= IMB b= «0 — [or | Collector-Emitter ; werdicrosma | |= | | © |Emitter-Collector a E Vou=2aV b= [10 00 aa] 3 [Collector Dark Current | 1050 [Von=24v, Ta=ese «| — | 2] 80 | uA | (Capacitance (Collector a pe COUPLED ELECTRICAL CHARACTERISTICS (Ta = 25°C) ; Tpo toma, Von=oV 30 a0] Current Transfer Ratio I¢/Ip Rank GB [100 [| — | 600 | Ip=t1mA, VoR=0.4V | — | 60] — | Saturated CTR I¢/Tr (sat) | Rank GB a= p= Collector-Emitter Saturation Io=2-4mA, ip= 2 8mA [| — | — [ oa | Colts Vor at fo=02mA, Ip=tima [= [oz — | v Rank GB C= [= [0a] Off-State Collector Current Vr=+0.7V, Vop=24V [| — | 1] 10[ ZA | CTR Symmetry Ic (ratio) | Ic Gr=—5mA)/Ic (p= +5mA) [033 | 1[ 3[ — | 3 2001-06-01

TOSHIBA TLP620,TLP620-2,TLP620-4 ISOLATION CHARACTERISTICS (Ta = 25°C) Capacitance Input to _ _ Output Cg Vg=0, f=1MHz pF Vg=500V [rxa0"| 10%] =| o_| [AC minute «| S000 | — [= | Isolation Voltage Bvg AC, 1 second, in oil ‘(| — [10000[— | “rms [DC, 1 minute, in ol | — [10000 — | Vee | SWITCHING CHARACTERISTICS (Ta = 25°C) Fall Time ocoma. Sa Turn-on Time ton | 30-1000 Ss Ss ~ -—t 2{— 1 B= 18K0 Oe) [aT] os = Voc=5V, Ip=+16mA [= 25 Fig.1 Switching Time Test Circuit Ip Voc ae | — RL ts Vcc Vcr 7 4.5V CE 0.5V ton tOFF 4 2001-06-01

TOSHIBA TLP620,TLP620-2,TLP620-4 TLP620-2 TLP620 Ip - Ta TLP620-4 Ip — Ta 100, 100, eee .— Ae Sw Litt} Ty yey yt ty Sw Li tty tT yt ey yy ty 2 ([[/ITTTTT TT itt ty 2 Ll {TTI Tt tT itt ty 5. gH ttt tity | ty tt s. ot tT ET 22 “CITT TINIE TTT Ty 22 “CUT TTT T TTT yy a eee Nee 2¢ og JI TNIT TTT ge TT TT TT TTT Nite ge TT] TTT PN ETT z* ot tt TT ttt TIN 1 z* oot tT TT TT TNE TT I s “LITT TT TTT TTT Tye s “LIT TT TTT TT TN Ty

3 LLL tT tt tity | 3 LLITItTt tt tity

ES -20 0 20 40 60 80 100120 Es -20 0 20 40 60 80 100-120 AMBIRNT TEMPERATURE Ta (°C) AMBIRNT TEMPERATURE Ta (°C) TLP620-2 TLP620 Pc - Ta TLP620-4 = PC — Ta 240) 120 [TT eT TT TPT yy yyy [TTT TTT TTT yy yyy 2 ntti ttt ttt tt tt | 2 ptt itt tt tt ttt ty ss LIT TTT TT TTT TTT se LITTINT TTT TTT a oe ze gi tit iINi ti ttt ty ge econ ge Pitty Piet tr tty 3 % yo} ET INT TT TT 3x ott PINT TT eee Se ELT TTT TT IXt TTT zs of LITT I NIT zs of Lt TT TTT TING TT s2 UT PTT 52 Pt peter TINY Ty 3S ti tT t Tt tT TNT 3 4 titi ttt tt ty 7 « [TT ttT TT Perry ee | < [TT TTT yt Prt ye yey ott ttt Tt ti tf | ALT tT Tit tt tity | -20 0 20 40 60 80 100 120 -20 0 20 40 60 80 100 120 AMBIRNT TEMPERATURE Ta (°C) AMBIRNT TEMPERATURE Ta (°C) 5 5 TLP620-2 A TLP620 Ipp — DR 3 TLP620-4 Ipp — DR Sooo TM TTT —T rouse wiorciooye 5 2000 ieee] com UE seer] ETT ser < SSS ees Se eases < Fo SS 2s col SONS 2s ol S| NST es S0Or eRe NS &< S00C rte te z ~ A < BF SHH ratify © £2 =H —F HFA BF cM TIME TTT 2 scott TUTTI TUTTI NSU B 100 2 ORS Se 3 oat} 8 oso z EERE z EERE 5 oo 5 oot

3 Lill] TUTHI VIII TT 2 gL LI TAIN TT FT

3 10° 3 10°? 3 10° 3 10° 3 10° 3 10°? 3 10-* 3 10° DUTY CYCLE RATIO DR DUTY CYCLE RATIO DR 5 2001-06-01

TOSHIBA TLP620,TLP620-2,TLP620-4 Ip — VE AVF/ATa — IF 100, ———O = as. Sa . ====S2>— 3 es a a SS OS 4 | SN PA pS & [| fe NS ee eee a coe 2 3 a cS

8 Fite ee i

< a ee ee ee as | ” aa a Sa a ee 88° i aLLtt ttt tt tt | -eaL ECO i 04 06 08 1.0 12 14 16 01 0.3 1 3 10 30 FORWARD VOLTAGE Vp (V) FORWARD CURRENT Ip (mA)

1000 Ipp — VFP Ip - Ta

2 ene ==] 2 ve ee = 500) REPETITIVE eS i & M/erequency-1oons = [7 ae ee Ae & ie A SSS SS 2 oS 2 it [77 | ft |_| s ee o 2 SS SS 8 oft 444 A = —

2 Fit ++ 4-44 2 i 77 +

= oo 8 xe

2 At ete a Be

PULSE FORWARD VOLTAGE Vgp (V) AMBIENT TEMPERATURE Ta (°C)

0 Ic — VCE Ic - VCE

Co FAA | > > Ta=25°C < Ta=25°C < a FP Pee et” Bt ed 2 60) 2 sr eT TCOCE ® oR eee BOUNCE) ob Eee z ea Saf patios et freer ms eee eee 8 | ZEEe Le Lean _| 8 ot Ye eer {| | "FFores | Pee 3 2 Nh ae 8 aaaanenaa g 5 (SSS _| (Agee War 0 2 4 6 8 10 0 0.2 04 0.6 08 10 12 14 COLLECTOR-EMITTER VOLTAGE Vog (V) COLLECTOR-EMITTER VOLTAGE Vog (V) 6 2001-06-01

TOSHIBA TLP620,TLP620-2,TLP620-4

60 Ve - iF 100; Ic — VF

Ee EET TET Tr © w~OLL EEE 7 g 2 SS § COOCe eee Se eee

2 CCC 8 ff tt | | zy |

2 of tt TT Tt tT | —

5 See i ee

Et. == Se FORWARD VOLTAGE Vp (V) / . Pe a 08 09 10 LL 12 13 FORWARD VOLTAGE Vf (V) 100) iC =F — Vce=5v CITT TT aii HN Al>zeati| q ee | a Za NN ~ a a <a | genie 2e7 dll em eect eee at PLUMP Vewees III) 8 Pemene tee NT rl Wo pes fy fa peyfisy| eee ill g -—f-| A BS woo Le | ta LN bel 08 ATT ger AA eS SS a 2 os A ge sof SAMPLE 8 =H SS Al Te 3 Coe Ee ry 6 “Cer AN mow ld 250 ome 8 ATM EL TT| — vee- ooo HE a S22: — = ie oosL LOTT TTT set HH 0.3 1 3 10 30 100 0.3 1 3 10 30 100 FORWARD CURRENT Ip (mA) FORWARD CURRENT Ip (mA) 7 2001-06-01

TOSHIBA TLP620,TLP620-2,TLP620-4

0 Ic - Ta ova VCE (sat) — Ta

100 FS "

Efe | , “AA a 2 020 Ig=1mA OS ee gs | TT TTT TT g epee ot tT TT Eso | ttt tt Tt Te e etLL eH ee 5 | g . | | g EEE EEE ae LLL LLL ELL

2 Cee rrrerrree ee BS 098}

& EP ET TET TT TT yt] Be e Lys fit oof TPT TT TT TT tT

8 COPE i a

2 Fee ree ALLEL TTI Ti tt tt |

oS os Lt yf tf a a a -20 0 20 40 60 80 100 oa} J EEE AMBIRNT TEMPERATURE Ta CO) pitt i} | Pee LTE TT TTT TT Ps on 20 0 20 40 60 80 100 AMBIRNT TEMPERATURE Ta (°C) ton, toff, ts TEST CONDITION RL — SWITCHING TIME 1000, es Vee nes EE _ i —— eos y rf Ip=16mA 0 a a F re _[ L_ 500) vecwsv | EE BL sv sop — eI at S Vor a5 ALi vl Ft BOA -—*| 2 ee >i torr e 50 Sse cee eee = of er g Pa ee Bee TTT | z De ees eee —— see s.r rrr a a | a 1 3 10 30 100 LOAD RESISTANCE Ry (kQ) 8 2001-06-01

TOSHIBA TLP620,TLP620-2,TLP620-4 RESTRICTIONS ON PRODUCT USE ooov07e8¢ @ TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. @ The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. @ Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. @ The products described in this document are subject to the foreign exchange and foreign trade laws. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 9 2001-06-01