TLP2601

TLP2601_07 TOSHIBA | Alldatasheet

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TOSHIBA Photocoupler GaA ℓA s Ired & Photo−IC TLP2601 Isolated Line Receiver Simplex / Multiplex Data Transmission Computer−Peripheral Interface Microprocessor System Interface Digital Isolation For A/D, D/A Conversion Direct Replacement For HCPL−2601 The TOSHIBA TLP2601 a photocoupler which combines a GaAℓAs IRed as the emitter and an integrated high gain, high speed photodetector. The output of the detector circuit is an open collector, Schottky clamped transistor. A Faraday shield integrated on the photodetector chip reduces the effects of capacitive coupling between the input LED emitter and the high gain stages of the detector. This provides an effective common mode transient immunity of 1000V/μs.

• Input current thresholds: I F = 5mA max.
• Isolation voltage: 2500Vrms min.
• Switching speed: 10MBd
• Common mode transient immunity: 1000V/μs min.
• Guaranteed performance over temp.: 0°C~70°C
• UL Recognized: UL1577, file No. E67349 Truth Table (positive logic) Input Enable Output H H L L H H H L H L L H A 0.01 to 0.1μF bypass capacitor must be connected between pins 8 and 5 (see Note 1). Pin Configuration (top view) SHIELD Schematic IF VF SHIELD VCC VO VE GND ICC IO IE TOSHIBA 11 −10C4 Weight: 0.54g Unit in mm

Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Input current, low level IFL 0 ⎯ 250 μA Input current, high level IFH 6.3 (*) ⎯ 20 mA Supply voltage**, output VCC 4.5 ⎯ 5.5 V High level enable voltage VEH 2.0 ⎯ V CC V Low level enable voltage VEL 0 ⎯ 0.8 V Fan out (TTL load) N ⎯ ⎯ 8 ⎯ Operating temperature Topr 0 ⎯ 70 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. (*) 6.3mA is a guard banded value which al lows for at least 20% CTR degradation. Initial input current threshold value is 5.0mA or less. This item denotes operating ranges, not meaning of recommended operating conditions. Absolute Maximum Ratings (no derating required) Characteristic Symbol Rating Unit Forward current IF 20 mA LED Reverse voltage VR 5 V Output current IO 25 mA Output voltage VO −0.5~7 V Supply voltage (1 minute maximum) VCC 7 V Enable input voltage (not to exceed V CC by more than 500mV) VE 5.5 V Detector Output collector power dissipation Po 40 mW Operating temperature range Topr −40~85 °C Storage temperature range Tstg −55~125 °C Lead solder temperature (10s) () T sol 260 °C

2500 Vrms Isolation voltage

(R.H.≤ 60%,AC 1min., (Note 10) BV S

3540 V dc

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (**) 1.6mm below seating plane.

Electrical Characteristics (Ta = 0°C ~70°C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit High level output current IOH VCC = 5.5V, VO = 5.5V IF = 250μA, VE = 2.0V ⎯ 1 250 μA Low level output voltage VOL VCC = 5.5V, IF = 5mA VE = 2.0V, IOL(sinking) = 13mA ⎯ 0.4 0.6 V High level supply current ICCH V CC = 5.5V, IF = 0, VE = 0.5V ⎯ 7 15 mA Low level supply current ICCL VCC = 5.5V, IF = 10mA VE = 0.5V ⎯ 12 19 mA Low level enable current IEL V CC = 5.5V, VE = 0.5V ⎯ −1.6 −2.0 mA High level enable current IEH V CC = 5.5V, VE = 2.0V ⎯ −1 ⎯ mA High level enable voltage VEH (Note 11) 2.0 ⎯ ⎯ Low level enable voltage VEL ⎯ ⎯ ⎯ 0.8 V Input forward voltage VF I F = 10mA, Ta = 25℃ ⎯ 1.65 1.75 V Input reverse breakdown voltage BVR I R = 10μA, Ta = 25℃ 5 ⎯ ⎯ V Input capacitance CIN V F = 0, f = 1MHz ⎯ 45 ⎯ pF Input diode temperature coefficient ΔV F/ΔTA I F = 10mA ⎯ −2.0 ⎯ mV / °C Input−output insulation leakage current II−O Relative humidity = 45% Ta=25℃, t = 5 second VI−O = 3000Vdc, (Note 10) ⎯ ⎯ 1 μA Resistance (input−output) R I−O VI−O = 500V, R.H.≤ 60% (Note 10) 5×10 ⎯ Ω Capacitance (input−output) C I−O f = 1MHz, (Note 10) ⎯ 0.6 ⎯ pF (**)All typ.values are at VCC = 5V, Ta = 25°C.

Switching Characteristics (Ta = 25℃, VCC = 5 V) Characteristic Symbol Test Circuit Test Condition Min. Typ. Max. Unit Propagation delay time to high output level tpLH ― 60 75 ns Propagation delay time to low output level t pHL ― 60 75 ns Output rise time(10−90%) t r ― 30 ― ns Output fall time(90−10%) t f RL = 350Ω, CL = 15pF IF = 7.5mA (Note 2), (Note 3), (Note 4)&(Note 5) ― 30 ― ns Propagation delay time of enable from V EH to VEL tELH ― 25 ― ns Propagation delay time of enable from V EL to VEH tEHL RL = 350Ω, CL = 15pF IF = 7.5mA VEH = 3.0V VEL = 0.5V (Note 6)&(Note 7) ― 25 ― ns Common mode transient immunity at high output level CM H VCM = 400V RL = 350Ω VO(min.) = 2V IF = 0mA, (Note 9) 1000 10000 ― V/ μs Common mode transient immunity at low output level CM L VCM = 400V RL = 350Ω VO(max.) = 0.8V IF = 7.5mA, (Note 8) −1000 −10000 ― V/ μs

Test Circuit 1. Test Circuit 2. Test Circuit 3. 1 8 RL VO VCC CL Output monitor- ing node 0.1μF Bypass (*) GND 47Ω Pulse generator ZO = 50Ω tr = 5ns IF Monitoring node VOH VOL 1.5V IF = 7.5mA IF = 3.75mA tpLH tpHL Output VO Input IF tpHL and tpLH (*) CL is approximately 15pF which includes probe and stray wiring capacitance. 1 8 RL VO VCC CL Output monitor- ing node 0.1μF Bypass (*) GND Pulse generator ZO = 50 Ω tr = 5ns IF Input VE monitoring node VOH VOL 1.5V 3.0V 1.5V tELH tEHL Output VO Input VE tELH and tEHL 7.5mA dc (*) CL is approximately 15pF which includes probe and stray wiring capacitance. 1 8 RL VO VCC 0.1μF Bypass GND IF VCM VFF A B Pulse gen. ZO = 50 Ω 400V VOL 90% 90% 10% 10% VCM VO tr tf VO Transient Immunity and Typ. Waveforms. Switch at A : IF = 0mA Switch at B : IF = 5mA

ΔVF / ΔTa – IF Forward current I F ( m A ) Forward voltage temperature coefficient ΔVF /ΔTa (mV/°C) -1.4 0.1 0.3 1 3 10 30 -1.6 -1.8 -2.0 -2.2 -2.4 -2.6 I F – VF Forward voltage V F ( V ) forward current I F ( m A ) 100 0.01 1.0 0.1 1.2 1.4 1.6 1.8 Ta = 25°C V O – IF Forward current I F ( m A ) Output voltage V O (V) 1 2 34 5 6 1kΩ VCC = 5V Ta = 25°C RL=350Ω 4kΩ I OH – Ta Ambient temperature Ta (°C) High level output current IOH ( μA) 100 10 20 30 40 50 60 70 IF = 250μA VCC = 5.5V VO = 5.5V 0 1 2 34 5 6 V O – IF Forward current I F ( m A ) Output voltage V O (V) Ta = 70°C 0°C VCC = 5V RL=350Ω RL=4kΩ V OL – Ta Low level output voltage VOL (V) Ambient temperature Ta (°C) 0.2 0 80 20 40 60 0.3 0.4 0.5 IF = 5mA VCC = 5.5V VE = 2V IOL=16mA 6.4mA 9.6mA 12.8mA

tpHL, tpLH – IF Forward current I F ( m A ) Propagation delay time tpHL, tpLH (ns) 120 5 19 7 9 11 13 15 17 100 RL=4kΩ 1kΩ 350Ω 350Ω 1kΩ 4kΩ tpLH tpLH tpHL Ta = 25°C VCC = 5V tpLH tpHL, tpLH – Ta Ambient temperature Ta (°C) Propagation delay time tpHL, tpLH (ns) 0 70 120 100 10 20 30 40 50 60 RL= 4kΩ 1kΩ 350Ω 1kΩ 4kΩ tpLH tpLH tpHL 350Ω VCC = 5 V IF = 7.5mA tr, tf – Ta Rise, fall time t r, tf ( n s ) Ambient temperature Ta (°C) 0 70 10 20 30 40 50 60 280 300 320 RL= 4kΩ 1kΩ 350Ω 350Ω 1kΩ 4kΩ tf tf tf tr VCC = 5V IF = 7.5mA tEHL, tELH – Ta Ambient temperature Ta (°C) Enable propagation delay time tEHL, tELH (ns) 0 70 10 20 30 40 50 60 RL= 4kΩ 1kΩ 350Ω 1kΩ 4kΩ tELH tELH tEHL 350Ω tELH VCC = 5V VEH = 3V IF = 7.5mA

1. The V CC supply voltage to each TLP2601 isolator must be bypassed by a 0.1μF capacitor of larger.This can be either a ceramic or solid tantalum capacitor with good high frequency characteristic and should be connected as close as possible to the package VCC and GND pins of each device. 2. t pHL ･ Propagation delay is measured from the 3.75mA le vel on the low to high transition of the input current pulse to the 1.5V level on the high to low transition of the output voltage pulse. 3. t pLH ･ Propagation delay is measured from the 3.75mA le vel on the high to low transition of the input current pulse to the 1.5V level on the low to high transition of the output voltage pulse. 4. t f ･ Fall time is measured from the 10% to the 90% leve ls of the high to low transition on the output pulse. 5. t r ･ Rise time is measured from the 90% to 10% leve ls of the low to high transition on the output pulse. 6. t EHL ･ Enable input propagation delay is measured from th e 1.5V level on the low to high transition of the input voltage pulse to the 1.5V level on the high to low transition of the output voltage pulse. 7. t ELH ･ Enable input propagation delay is measured from th e 1.5V level on the high to low transition of the input voltage pulse to the 1.5V level on the low to high transition of the output voltage pulse. 8. CM L ･ The maximum tolerable rate of fall of the common mode voltage to ensure the output will remain in the low output state (i.e., VOUT < 0.8V). Measured in volts per microsecond (V / μs). 9. CM H ･ The maximum tolerable rate of fall of the common mode voltage to ensure the output will remain in the high state (i.e., VOUT > 2.0V). Measured in volts per microsecond(V / μs). Volts/microsecond can be translated to sinusoidal voltages: V / μs = Max.dt )CM(dv = f CM VCM (p.p.) Example: V CM = 318Vpp when fCM = 1MHz using CML and CMH = 1000V / μs data sheet specified minimum. 10. ･ Device considered a two −terminal device: Pins 1, 2, 3 and 4 shorted together, and Pins 5, 6, 7 and 8 shorted together. 11. Enable ･ No pull up resistor required as the de vice has an internal pull up resistor. input

RESTRICTIONS ON PRODUCT USE 20070701-EN

• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity a nd vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
• The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dus t or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically.
• Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.