TLP250

TLP250_07 TOSHIBA | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 7

Technical content

TOSHIBA Photocoupler GaAℓ As Ired & Photo−IC TLP250 Transistor Inverter Inverter For Air Conditioner IGBT Gate Drive Power MOS FET Gate Drive The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a integrated photodetector. This unit is 8 −lead DIP package. TLP250 is suitable for gate driving circuit of IGBT or power MOS FET.

• Input threshold current: I F=5mA(max.)
• Supply current (ICC): 11mA(max.)
• Supply voltage (VCC): 10−35V
• Output current (IO): ±1.5A (max.)
• Switching time (tpLH/tpHL): 0.5μs(max.)
• Isolation voltage: 2500Vrms(min.)
• UL recognized: UL1577, file No.E67349
• Option(D4) VDE Approved : DIN EN60747-5-2 Maximum Operating Insulation Voltage : 890V PK Highest Permissible Over Voltage : 4000VPK (Note):When a EN60747-5-2 approved type is needed, P l e a s e d e s i g n a t e “ O p t i o n ( D 4 ) ” Truth Table Tr1 Tr2 On On Off Input LED Off Off On Unit in mm TOSHIBA 11 −10C4 Weight: 0.54 g(Typ.) Pin Configuration (top view) 1 : N.C. 2 : Anode 3 : Cathode 4 : N.C. 5 : GND 6 : VO (Output) 7 : VO 8 : VCC Schmatic VF IF ICC (Tr 1) VO GND (Tr 2) IO VO VCC 5A 0.1μF bypass capcitor must be connected between pin 8 and 5 (See Note 5).

Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current IF 20 mA Forward current derating (Ta ≥ 70°C) ΔIF / ΔTa −0.36 mA / °C Peak transient forward curent (Note 1) I FPT 1 A Reverse voltage VR 5 V LED Junction temperature Tj 125 °C “H”peak output current (PW ≤ 2.5μs,f ≤ 15kHz) (Note 2) I OPH −1.5 A “L”peak output current (PW ≤ 2.5μs,f ≤ 15kHz) (Note 2) I OPL +1.5 A (Ta ≤ 70°C) 35 Output voltage (Ta = 85°C) VO V (Ta ≤ 70°C) 35 Supply voltage (Ta = 85°C) VCC V Output voltage derating (Ta ≥ 70°C) ΔVO / ΔTa −0.73 V / °C Supply voltage derating (Ta ≥ 70°C) ΔVCC / ΔTa −0.73 V / °C Detector Junction temperature Tj 125 °C Operating frequency (Note 3) f 25 kHz Operating temperature range Topr −20~85 °C Storage temperature range Tstg −55~125 °C Lead soldering temperature (10 s) Tsol 260 °C Isolation voltage (AC, 1 min., R.H.≤ 60%) (Note 4) BV S 2500 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width P W ≤ 1μs, 300pps Note 2: Exporenential wavefom Note 3: Exporenential wavefom, I OPH ≤ −1.0A( ≤ 2.5μs), IOPL ≤ +1.0A( ≤ 2.5μs) Note 4: Device considerd a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted together. Note 5: A ceramic capacitor(0.1 μF) should be connected from pin 8 to pi n 5 to stabilize the operation of the high gain linear amplifier. Failure to provide the bypassi ng may impair the switching proparty. The total lead length between capacitor and coupler should not exceed 1cm. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Input current, on (Note6) I F(ON) 7 8 10 mA Input voltage, off VF(OFF) 0 ― 0.8 V Supply voltage VCC 15 ― 30 20 V Peak output current IOPH/IOPL ― ― ±0.5 A Operating temperature Topr −20 25 70 85 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guide line respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Note 6: Input signal rise time(fall time)<0.5μs.

Electrical Characteristics (Ta = −20~70°C, unless otherwise specified) Characteristic Symbol Test Cir− cuit Test Condition Min Typ.* Max Unit Input forward voltage VF ― I F = 10 mA , Ta = 25°C ― 1.6 1.8 V Temperature coefficient of forward voltage ΔVF / ΔTa ― I F = 10 mA ― −2.0 ― mV / °C Input reverse current IR ― V R = 5V, Ta = 25°C ― ― 10 μA Input capacitance CT ― V = 0 , f = 1MHz , Ta = 25°C ― 45 250 pF “H” level I OPH 1 IF = 10 mA Output current “L” level I OPL 2 VCC = 30V (*1) IF = 0 A “H” level V OH 3 VCC1 = +15V, VEE1 = −15V RL = 200Ω, IF = 5mA 11 12.8 ― Output voltage “L” level V OL 4 VCC1 = +15V, VEE1 = −15V V VCC = 30V, IF = 10mA Ta = 25°C ― 7 ― “H” level I CCH ― VCC = 30V, IF = 10mA ― ― 11 VCC = 30V, IF = 0mA Ta = 25°C ⎯ 7.5 ⎯ Supply current “L” level I CCL ― VCC = 30V, IF = 0mA ― ― 11 mA Threshold input current “Output L →H” IFLH ― VCC1 = +15V, VEE1 = −15V RL = 200Ω, VO > 0V ― 1.2 5 mA Threshold input voltage “Output H →L” VFHL ― VCC1 = +15V, VEE1 = −15V RL = 200Ω, VO < 0V 0.8 ― ― V Supply voltage VCC ― 10 ― 35 V Capacitance (input−output) CS ― VS = 0 , f = 1MHz Ta = 25℃ ― 1.0 2.0 pF Resistance(input−output) R S ― VS = 500V , Ta = 25°C R.H.≤ 60% 1×1012 10 14 ― Ω * All typical values are at Ta = 25°C (*1): Duration of I O time ≤ 50μs

Switching Characteristics (Ta = −20~70°C , unless otherwise specified) Characteristic Symbol Test Cir− cuit Test Condition Min Typ.* Max Unit L→H t pLH ― 0.15 0.5 Propagation delay time H→L t pHL ― 0.15 0.5 Output rise time tr ― ― ― Output fall time tf IF = 8mA VCC1 = +15V, VEE1 = −15V RL = 200Ω ― ― ― μs Common mode transient immunity at high level output C MH VCM = 600V, IF = 8mA VCC = 30V, Ta = 25°C −5000 ― ― V / μs Common mode transient immunity at low level output C ML VCM = 600V, IF = 0mA VCC = 30V, Ta = 25°C 5000 ― ― V / μs All typical values are at Ta = 25°C Test Circuit 1 : IOPH Test Circuit 2 : I OPL Test Circuit 3 : VOH Test Circuit 4 : V OL VCC1 0.1μF VOL VF RL VEE1 V VCC 0.1μF IOPL A V6-5 VCC1 0.1μF VOH V IF RL VEE1 VCC 0.1μF IOPH V8-6 IF A

Test Circuit 5: tpLH, tpHL, tr tf Test Circuit 6: CMH, CML CML(CMH) is the maximum rate of rise (fall) of the comm on mode voltage that can be sustained with the output voltage in the low (high) state. VEE1 VCC1 VO RL 0.1μF IF 100Ω VO IF VO VOH GND VOL 80% 80% tpLH tpHL tr tf VCM 90% VO 600V CMH CHL 10% tr tf 26V 3V SW :A(IF=8mA) SW :B(IF=0) 0.1μF VCC VO VCM + - A B SW IF CML = CMH = 480 (V) tr (μs) tf (μs) 480 (V)

IF – VF Forward voltage V F (V) Forward current I F ( m A ) 100 1.0 0.5 0.3 0.1 0.05 0.03 0.01 Ta = 25 °C I F – Ta Ambient temperature Ta (°C) Allowable forward current IF (mA) 0 100 20 40 60 80 V CC – Ta Ambient temperature Ta (°C) Allowable supply voltage V CC (V) 0 100 20 40 60 80 I OPH, IOPL – Ta Ambient Temperature Ta (°C) Allowable peak output current IOPH, IOPL (A) 0 100 20 40 60 80 PW ≦ 2.5 μs, f ≦ 15 KHz ΔVF / ΔTa – IF Forward current I F (mA) Forward voltage temperature coefficient ΔVF / ΔTa (mV / °C) -1.4 0.1 0.3 0.5 1 3 5 10 30 -1.6 -1.8 -2.0 -2.2 -2.4 -2.6

RESTRICTIONS ON PRODUCT USE 20070701-EN

• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
• The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dus t or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically.
• Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.