TLP2200_07 TOSHIBA | Alldatasheet

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TOSHIBA Photocoupler GaA ℓA s Ired & Photo-IC TLP2200 Isolated Buss Driver High Speed Line Receiver Microprocessor System Interfaces MOS FET Gate Driver Direct Replacement For HCPL−2200 The TOSHIBA TLP2200 consists of a GaAℓAs light emitting diode and integrated high gain, high speed photodetector. This unit is 8−lead DIP package. The detector has a three state output stage that eliminates the need for pull−up resistor, and built−in schmitt trigger. The detector IC has an internal shield that provides a guaranteed common mode transient immunity of 1000V / μs. z Input current: I F = 1.6mA z Power supply voltage: VCC = 4.5~20V z Switching speed: 2.5MBd guaranteed z Common mode transient immunity: ±1000V / μs (min.) z Guaranteed performance over temp: 0~85°C z Isolation voltage: 2500Vrms(min.) z UL recognized: UL1577, file No. E67349 Truth Table (positive logic) Input Enable Output H H Z L H Z H L H L L L Unit in mm TOSHIBA 11 −10C4 Weight: 0.54 g Pin Configuration (top view) 1: N.C. 2: Anode 3: Cathode 4: N.C. 5: GND 6: V E (enable) 7: VO (output) 8: VCC VCC GND SHIELD Schematic IF VF SHIELD VCC VO VE GND ICC IO IE

Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Input current, on IF(ON) 1.6 ― 5 mA Input current, off IF(OFF) 0 ― 0.1 mA Supply voltage VCC 4.5 ― 20 V Enable voltage high VEH 2.0 ― 20 V Enable voltage low VEL 0 ― 0.8 V Fan out (TTL load) N ― ― 4 ― Operating temperature Topr 0 ― 85 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guide line respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Absolute Maximum Ratings (no derating required up to 70°C) Characteristic Symbol Rating Unit Forward current IF 10 mA Peak transient forward current (Note 1) IFPT 1 A LED Reverse voltage VR 5 V Output current IO 25 mA Supply voltage VCC −0.5~20 V Output voltage VO −0.5~20 V Three state enable voltage VE −0.5~20 V Detector Total package power dissipation (Note 2) P T 210 mW Operating temperature range Topr −40~85 °C Storage temperature range Tstg −55~125 °C Lead solder temperature (10s) () Tsol 260 °C Isolation voltage (AC 1min., R.H. ≤ 60%,Ta = 25°C) (Note 3) BVS 2500 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Pulse width 1 μs 300pps. (Note 2) Derate 4.5mW / °C above 70°C ambient temperature. (Note 3) Device considered a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5,6,7 and 8 shorted together () 1.6mm below seating plane.

Electrical Characteristics (unless otherwise specified, Ta = 0~85°C,VCC = 4.5~20V, IF(ON) = 1.6~5mA, IF(OFF) = 0~0.1mA, VEL = 0~0.8V,VEH = 2.0~20V) Characteristic Symbol Test Condition Min. Typ.* Max. Unit VO = 5.5V ― ― 100 Output leakage current (VO > VCC) IOHH IF = 5mA, VCC = 4.5V VO = 20V ― 2 500 μA Logic low output voltage VOL I OL = 6.4mA (4 TTL load) ― 0.32 0.5 V Logic high output voltage VOH I OH = −2.6mA 2.4 3.4 ― V Logic low enable current IEL V E = 0.4V ― −0.13 −0.32 mA VE = 2.7V ― ― 20 VE = 5.5V ― ― 100 Logic high enable current IEH VE = 20V ― 0.01 250 μA Logic low enable voltage VEL ― ― ― 0.8 V Logic high enable voltage VEH ― 2.0 ― ― V VCC = 5.5V ― 5 6.0 Logic low supply current ICCL IF = 0mA VE = don't care VCC = 20V ― 5.6 7.5 mA VCC = 5.5V ― 2.5 4.5 Logic high supply current ICCH IF = 5mA VE = don't care VCC = 20V ― 2.8 6.0 mA IOZL IF = 5mA VE = 2V VO = 0.4V ― 1 −20 VO = 2.4V ― ― 20 VO = 5.5V ― ― 100 High impedance state output current I OZH IF = 0mA VE = 2V VO = 20V ― 0.01 500 μA VO = VCC = 5.5V 25 55 ― Logic low short circuit output current (Note 4) IOSL I F = 0mA VO = VCC = 20V 40 80 ― mA VCC = 5.5V −10 −25 ― Logic high short circuit output current (Note 4) I OSH IF = 5mA VO = GND VCC = 20V −25 −60 ― mA Input current hysteresis IHYS V CC = 5V ― 0.05 ― mA Input forward voltage VF I F = 5mA, Ta = 25°C ― 1.55 1.7 V Temperature coefficient of forward voltage ΔV F / ΔTa I F = 5mA ― −2.0 ― mV / °C Input reverse breakdown voltage BV R I R = 10μA, Ta = 25°C 5 ― ― V Input capacitance CIN V F = 0V, f = 1MHz, Ta = 25°C ― 45 ― pF Resistance (input−output) R I−O V I−O = 500V R.H. ≤ 60% (Note 3) 5×10 10 1014 ― Ω Capacitance (input−output) C I−O V I−O = 0V, f = 1MHz (Note 3) ― 0.6 ― pF (**) All typ. values are at Ta = 25°C, VCC = 5V, IF(ON) = 3mA unless otherwise specified.

(unless otherwise specified, Ta = 0~85°C,VCC = 4.5~20V,IF(ON) = 1.6~5mA,IF(OFF) = 0~0.1mA) Characteristic Symbol Test Cir− cuit Test Condition Min. Typ. Max. Unit Without peaking capacitor C1 ― 235 ― Propagation delay time to logic high output level (Note 5) t pLH With peaking capacitor C1 ― ― 400 ns Without peaking capacitor C 1 ― 250 ― Propagation delay time to logic low output level (Note 5) t pHL With peaking capacitor C1 ― ― 400 ns Output rise time (10−90%) t r ― 35 ― ns Output fall time (90−10%) t f ― ― 20 ― ns Output enable time to logic high tpZH ― ― ― ― ns Output enable time to logic low tpZL ― ― ― ― ns Output disable time from logic high t pHZ ― ― ― ― ns Output disable time from logic low t pLZ ― ― ― ― ns Common mode transient immunity at logic high output (Note 6) CM H IF = 1.6mA, VCM = 50V, Ta = 25°C −1000 ― ― V / μs Common mode transient immunity at logic low output (Note 6) CM L IF = 0mA, VCM = 50V, Ta = 25°C 1000 ― ― V / μs (*) All typ. values are at Ta = 25°C, VCC = 5V, IF(ON) = 3mA unless otherwise specified. (Note 4) Duration of output short circuit time should not exceed 10ms. (Note 5) The tpLH propagation delay is measured from the 50% point on the leading edge of the input pulse to the 1.3V point on the leading edge of the output pulse. The tpHL propagation delay is measured from the 50% point on the trailing edge of the input pulse to the 1.3V point on the trailing edge of the output pulse. (Note 6) CM L is the maximum rate of rise of the common m ode voltage that can be su stained with the output voltage in the logic low state (VO ≤ 0.8V). CMH is the maximum rate of fall of the common mode voltage that can be sustained with the output voltage in the logic high state (VO ≤ 2.0V).

Test Circuit 1 t pHL, tpLH, tr and tf Test Circuit 2 t pHZ, tpZH, tpLZ and tpZL Output VO IF(ON) 50% 0mA 10% 90% Input IF tpLH tpHL VOH VOL tr tf 1.3V C1 is peaking capacitor. The probe and jig capacitances are include in C1. CL is approximately 15pF which includes probe and stray wiring capacitance. 2.15kΩ 1.1kΩ 681Ω IF(ON) 1.6mA 3mA 5mA VCC GND Input Monitoring Node VCC CL C1=120pF Output VO Monitoring Node D1~D4 1S1588 619Ω 5kΩ Pulse Generator t r = tf = 5ns VO = 5V Output VO IF=IF (ON) Input VE Output VO IF=IF (OFF) S1 Open S2 Closed S1 Closed S2 Open tPZL 1.3V 0V tPHZ tPZH 0.5V 1.3V tPLZ 0.5V S1 and S2 Closed 3.0V 1.3V S1 and S2 Closed VOH 1.5V VOL CL is approximately 15pF which includes probe and stray wiring capacitance. VCC GND Input VE Monitoring Node VCC D1CL VO D1~D4 1S1588 619Ω 5kΩ IF Pulse Generator Z O = 50Ω tr = tf = 5ns

Test Circuit 3 Common Mode Transient Immunity 50V VCM 90% 10% tr tf VOH VO(MIN.) (*) Output VO VO(MAX.) (*) VOL Switch AT A: IF = 1.6mA (*) See note6 Switch AT B: IF = 0mA VCC GND VCC − + 0.1μF Bypass VCM A Output VO Monitor- ing Node I F B VFF Pulse gen. ZO = 50Ω

RESTRICTIONS ON PRODUCT USE 20070701-EN

  • The information contained herein is subject to change without notice.
  • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
  • The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
  • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
  • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
  • GaAs(Gallium Arsenide) is used in this product. The dus t or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically.
  • Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.