TLP206G

TLP206G TOSHIBA | Alldatasheet

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TOSHIBA Photocoupler GaAs Ired & Photo −MOS FET TLP206G PBX Modem･FAX Card Measurement Instrument The TOSHIBA TLP206G consists of gallium arsenide infrared emitting diode optically coupled to a photo−MOS FET in a 8 pin SOP . The TLP206G is a 2−Form−A switch which is suitable for replacement of mechanical relays in many application. /Gb7/G20SOP 8 pin (2.54SOP8): 2−Form−A /Gb7/G20Peak off−state voltage: 350V(min) /Gb7/G20Trigger LED current: 3mA(max) /Gb7/G20On−state current: 120mA(max) /Gb7/G20On−state resistance: 35Ω(max) /Gb7/G20Isolation voltage: 1500V rms(min) /Gb7/G20UL recognized: UL1577, file no.E67349 /Gb7/G20BSI approved: BS EN60065: 1994,certificate no.8273 BS EN60950: 1992,certificate no.8274 /Gb7/G20SEMKO approved: SS EN60065 SS EN60950 /Gb7/G20Option(V4)type TUV approved: DIN VDE0884 / 06.92, certificate No. R9850580 Schematic Pin Configuration (top view) 1, 3: Anode 2, 4: Cathpde 5: Drain D1 6: Drain D2 7: Drain D3 8: Drain D4 1, 3 2, 4 6, 8 5, 7 2-Form-A Unit in mm JEDEC ― EIAJ ― TOSHIBA Weight: 0.2 g

Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current I F 50 mA Forward current derating (Ta ≥ 25°C) ∆IF / °C /G2d0.5 mA / °C Pulse forward current (100µs pulse, 100pps) I FP 1 A Reverse voltage V R 5 V LED Junction temperature T j 125 °C Off/G2dstate output terminal voltage V OFF 350 V Both channel (Note 1) 100 On/G2dstate current One channel ION 120 mA Both channel (Note 1) /G2d1.0 On/G2dstate RMS current derating(Ta ≥ 25°C) One channel ∆ION / °C /G2d1.2 mA / °C Detector Junction temperature T j 125 °C Storage temperature range T stg /G2d55~125 °C Operating temperature range T opr /G2d40~85 °C Lead soldering temperature (10 s) T sol 260 °C Isolation voltage (AC, 1 min., R.H.≤ 60%) (Note 2) BV S 1500 Vrms (Note 1): Two channels operating simultaneously. (Note 2): Device considered a two/G2dterminal device: Pins1,2,3 and 4 shorted together and pins 5,6,7 and 8 shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage V DD ―/G20 ― 280 V Forward current I F 5 7.5 25 mA On/G2dstate current I ON ―/G20 ― 100 mA Operating temperature T opr /G2d20 ―/G20 65 °C

Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage V F I F = 10 mA 1.0 1.15 1.3 V Reverse current I R V R = 5 V — — 10 µA LED Capacitance C T V = 0, f = 1 MHz — 30 — pF Off/G2dstate current I OFF V OFF = 350 V — — 1 µA Detector Capacitance C OFF V = 0,f = 1MHZ — 40 — pF Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIn. Typ. Max. Unit Trigger LED current I FT I ON = 120 mA — 1 3 mA On/G2dstate resistance R ON I ON = 120 mA, IF = 5 mA — 22 35 Ω Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Capacitance input to output C S VS = 0, f = 1 MHz — 0.8 — pF Isolation resistance R S VS = 500 V, R.H. ≤ 60% 5×10 10 1014 — Ω AC, 1 minute 1500 — — AC, 1 second, in oil — 3000 — Vrms Isolation voltage BV S DC, 1 minute, in oil — 3000 — V dc Switching Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Turn/G2don time t ON — 0.3 1 Turn/G2doff time t OFF RL = 200Ω (Note 3) VDD = 20 V, IF = 5 mA — 0.1 1 ms (Note 3): Switching time test circuit 1, 3 VDD VOUT RL 5, 7 IF 6, 8 2, 4 tOFF tON 10% 90% VOUT IF

IF – Ta Ambient temperature Ta (°C) Allowable forward current I F (mA) 100 －20 0 20 40 60 80 100 120 －20 0 20 40 60 80 100 ION – Ta Ambient temperature Ta (°C) Allowable MOSFET on-state current I ON(RMS) ( m A ) 140 100 120 IFP – DR Duty cycle ratio D R Allowable pulse forward current I FP (mA) 5000 500 300 100 10－3 3 3 3 10－2 10－1 100 3000 1000 Pulse width ≤ 100µs Ta = 25°C IF –VF Forward voltage V F (V) Forward current I F (mA) 100 0.1 0.3 0.5 Ta = 25°C ∆VF / ∆Ta – IF Forward current I F (mA) Forward voltage temperature coefficient ∆VF / ∆Ta (mV / °C) －0.4 0.1 0.3 1 3 5 10 50 －2.4 －1.6 －1.2 0.5 －0.8 －2.0 －2.8 IFP – VFP Pulse forward voltage V FP (V) Pulse forward current I FP ( m A ) 1000 300 1.8 500 100 Pulse width ≤ 10µs Repetitive frequency = 100Hz Ta = 25°C

IFT – Ta Relative trigger LED current IFT / IFT (Ta = 25°C) Ambient temperature Ta (°C) －40 －20 0 20 40 60 100 80 ION = 120mA ION – VON MOSFET on-state voltage V ON ( V ) MOSFET on-state current I ON (mA) 150 －150－2.5 100 －50 －100 －1.5 0.5 1.5 2.5 Ta = 25°C IF = 5mA IOFF – Ta Ambient temperature Ta (°C) MOSFET off-state current I ON (mA) 1000 －20 300 100 0 20 40 60 80 100 500 VOFF = 350V Turn-off time t OFF ( m s ) Ambient temperature Ta (°C) －40 －20 0 20 40 60 100 80 RON – Ta MOSFET on-state resistance R ON ( Ω) ION = 120mA IF = 5mA tON – Ta Ambient temperature Ta (°C) Turn-on time t ON (ms) 1000 －40 －20 0 20 60 80 100 800 600 200 VDD = 20V RL = 200Ω IF = 5ｍA 400 tOFF – Ta Ambient temperature Ta (°C) 400 －40 －20 0 20 60 80 100 300 200 100 VDD = 20V RL = 200Ω IF = 5ｍA －0.5

/Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. /Gb7/G20The products described in this document are subject to the foreign exchange and foreign trade laws. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EBCRESTRICTIONS ON PRODUCT USE