TLP202A TOSHIBA | Alldatasheet

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TOSHIBA Photocoupler Photorelay TLP202A Telecommunications Measurement and Control Equipment Data Acquisition System Measurement Equipment The Toshiba TLP202A consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in an 8-pin SOP package. This photorelay has higher output current rating than phototransistor-type photocoupler; hence, it is suitable for use as On/Off control for high current. /Gb7/G208-pin SOP (2.54SOP8): Height = 2.1 mm, pitch = 2.54 mm /Gb7/G20Normally open (1-form-A) device /Gb7/G20Peak off-state voltage: 60 V (min) /Gb7/G20Trigger LED current: 3 mA (max) /Gb7/G20On-state current: 400 mA (max) /Gb7/G20On-state resistance: 2 Ω (max) /Gb7/G20Isolation voltage: 1500 Vrms (min) /Gb7/G20UL recognized: UL1557, File No.E67349 Pin Configuration (top view) Unit: mm JEDEC ― JEITA ― TOSHIBA 11-10H1 Weight: 0.2 g (typ.) 1, 3 : Anode 2, 4 : Cathode 5 : Drain D1 6 : Drain D2 7 : Drain D3 8 : Drain D4

Maximum Rating (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Rating Unit Forward current I F 50 mA Forward current derating (Ta /G3e/G20/G3d25°C) /G44IF/°C /G2d0.5 mA/°C Peak forward current (100 /G6ds pulse, 100 pps) IFP 1 A Reverse voltage V R 5 V LED Junction temperature T j 125 °C Off-state output terminal voltage VOFF 60 V On-state current I ON 400 mA Forward current derating (Ta /G3e/G20/G3d25°C) /G44ION/°C /G2d4.0 mA/°C Detector Junction temperature T j 125 °C Storage temperature T stg /G2d55 to 125 °C Operating temperature T opr /G2d40 to 85 °C Lead soldering temperature (10 s) T sol 260 °C Isolation voltage (AC, 1 min, R.H. /G3c/G20/G3d60%) (Note 1) BVS 1500 Vrms Note 1: LED pins are shorted together. Detector pins are also shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage V DD /Gbe /Gbe 48 V Forward current I F 5 7.5 25 mA On-state current I ON /Gbe /Gbe 400 mA Operating temperature T opr /G2d20 /Gbe 65 °C Electrical Characteristics (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V F I F /G3d 10 mA 1.0 1.15 1.3 V Reverse current I R V R /G3d 5 V /Gbe /Gbe 10 /G6dA LED Capacitance C T V /G3d 0, f /G3d 1 MHz /Gbe 30 /Gbe pF Off-state current I OFF V OFF /G3d 60 V /Gbe /Gbe 1 /G6dA Detector Capacitance C OFF V /G3d 0, f /G3d 1 MHz /Gbe 130 /Gbe pF Coupled Electrical Characteristics (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Trigger LED current I FT I ON /G3d 400 mA /Gbe 1.6 3 mA Return LED current I FC I OFF /G3d 100 /G6dA 0.1 /Gbe /Gbe mA On-state resistance R ON I ON /G3d 400 mA, IF/G3d 5 mA /Gbe 1 2 /G57

Isolation Characteristics (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Capacitance input to output C S V S /G3d 0 V, f /G3d 1 MHz /Gbe 0.8 /Gbe pF Isolation resistance R S V S /G3d 500 V, R.H. /G3c/G3d60% 5 /Gb4 1010 10 14 /Gbe /G57 AC, 1 min 1500 /Gbe /Gbe AC, 1 s, in oil /Gbe 3000 /Gbe Vrms Isolation voltage BV S DC, 1 min, in oil /Gbe 3000 /Gbe Vdc Switching Characteristics (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Turn-on time t ON /Gbe 0.8 2 Turn-off time t OFF RL /G3d 200 /G57/G20 (Note 2) VDD /G3d 20 V, IF /G3d 5 mA /Gbe 0.1 0.5 ms Note 2: Switching time test circuit tOFF tON 10% 90% VOUT IF 6, 8 1, 3 VDD VOUT RL 5, 7 2, 4 IF

/Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EACRESTRICTIONS ON PRODUCT USE