TLP200D TOSHIBA | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET PBX Unit in mm MODEM - FAX CARD MEASUREMENT INSTRUMENT . . sa: fof fof Fa The TOSHIBA TLP200D consists of gallium arsenide infrared a emitting diode optically coupled to a photo-MOS FET in a 8 pin lo 4 SOP. 000d xg The TLP200D is a 2-Form-A switch which is suitable for 9.40.25 5 wl replacement of mechanical relays in many applications which == 3, _—" require space savings. _ al 7108403 ; 4 040.1 g 70x04 e SOP 8pin (2.54SOP8) : 2-Form-A e Peak Off-State Voltage : 200 V (MIN.) e Trigger LED Current : 3mA (MAX.) e On-State Current : 200 mA (MAX.) JEDEC _ © OnState Resistance :80 | (MAX) . TOSHIBA e Isolation Voltage : 1500 Vrms (MIN.) Weight : 0.2g¢ @ UL Recognized : UL1577, File No. E67349 SCHEMATIC PIN CONFIGURATION (TOP VIEW) 2-Form-A 1q 8 1,3 6, 8 | 8 7 6 5 =! 2q O7 i + » 1 23 4 2,4 5,7 3d he 1,3 : ANODE 2,4 : CATHODE 5 : DRAIN D1 6 : DRAIN D2 7 : DRAIN D3 40 5 8 : DRAIN D4 1 2003-03-12

MAXIMUM RATINGS (Ta = 25°C) a [Forward Current Derating (Ta = 25°C) a Pulse Forward Current (100 us pulse, 100 pps) [ ie | 2 | A | % [Off State Output Terminal Voltage [_Vorr [200 | v_| Z|OnState Curent ———SSS~S~s Tn’ | 200m On-State RMS C it Derati. ° ° A Operating Temperature Range Lead Soldering Temperature (10s) | Tso. | 260] °C | Isolation Voltage (AC, 1min., R.H. = 60%) (Note 2) (Note 1) : Two channels operating simultaneously. (Note 2) : Device considered a two-terminal device : pins1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted together. RECOMMENDED OPERATING CONDITIONS Supply Voltage [vpp | — [150 [200 | V_| [On-State Current | lon | — | — | 10] mA | [Operating Temperature | Tur [-20 | — | 65 | °C | 2 2003-03-12

INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta = 25°C) 7 [Forward Voltage fi [Reverse Curent | IR |Vr=5V Sid S| — | 10 | | a Elcwrasane | corr [v=0,=13 | = | 100 | = | or COUPLED ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Ton = 200mA L— i s Tar] ISOLATION CHARACTERISTICS (Ta = 25°C) [Capacitance Taput to Output | Os |Vg=0,t=iMmz | — | 08) — | oF | [isolation Resistance «| _Rg _[Vg=500V, RH =S00% x0 10"| — | 0 | [AG Tminute «| st500 | — | — Jy Isolation Voltage BYg [AC,1 second, mol | — | s000f — | Yrs [DC, 1 minute, in ol | — | 3000] — | Vee | SWITCHING CHARACTERISTICS (Ta = 25°C) [Turn-on Time | ton [RL = 2000 Wote 3) | — [06 [15 | [Parn-off Time | torr |Vpp=20V,r=5ma_ [| — | 04 | 10 | (Note 3): Switching Time Test Circuit Ir 1,3 6,8 Ry ~YDD » [1] Ve 2,4 5,7 out 90% Vout 10% ton tOFF 3 2003-03-12

D TLP200 J = 4 Ion = = SHI a TO . prioritise ESSE | |] 2 TEE Hf rH : g Sears LT] an Z BESearanecede on pe d seststsiscs Sseeretectae é fo FA oe CT aca | HH

2 Lt SEH CT 5 “HH FE

Z Poo an | H i

8 NA | g oF BIENT 7

5 jevnasiertts es: aa | | 55 PEELE PB i. = _ z e avaeacii | =a 3 on CEE ‘ TEs | == x a ) ; : : Ss s “AAA 40 Ta CO : = = 6 0 ‘TURE z f 2 3 Lif i. "MPERA’ 7 + = Ss fescezete as (esate g pee ae : ‘a Ze Li | ia dae : BEER g See PRS =e 5 pe {2 = | 2. isasa/isasaans i = : : 7 po Ipr [| Lt ze fade : : | Se =se7ce5cee | =

3 Ha L_| 1 “ : :

E seo 12 - : : : ; & “A 1.0 TAGE. V; . = i : 7 : 2 1H HO a an =< og vont ap 7 | : : 7 Ron Td | a tS ee Po ae user Ea :: eH Sr ee ih a tons 20 H+-H Tl Bf re Ee af : Hl ab LL rT CU oT ef IF aane= am : i : : > . ERATUI

8 Sscceeectoe Se z

z TH p= on an oe i 7 | 7 rH i ft | é coo Hy | 2 cA > . E Ta (°C) + : ‘RATURI = . ‘TEMPE! ” AMBIENT a

ton, tOFF — IF ton, tOFF — Ta 3000) 3000, TTT TTY te = 26 vpp-20v |_|] 7 TTT TTT a wee oot gf moem LT TT TT TTT | © 000K NP Ry = 2000 ~ ooo] IR=SmA |} 7} 4} 1} tt g PA 2 ———— & =o SS A ze OE ee ee one ee oe | § good NT 3 800 g | g CCCP Sn LUN LTTE TTT 5 MESSER ERS g 100] ea eee g _ ES ss | g EE NE g Fee eeEee S| 2 oor ti Neat ee Bf TN Hee Oe eee | | : Li EEE EEE EE ELLE a “7-0 ee 8 1 3.5 10 30 50 100 300 500 AMBIENT TEMPERATURE Ta (°C) FORWARD CURRENT Ip (mA) ~ IoFF — Ta 100 ——— 1 "Cora EEE EEEEES & a a a a iy) a a OO i ti ttt yy yey yy ey ett dT ee P _———

8 Sees ssa So

< a a A a i a es e tt pberro rrr Ss ‘EerTt] TT ttt yyy | e LETT TTT go4 2 —20 0 20 40 60 80 100120 AMBIENT TEMPERATURE Ta (°C) 5 2003-03-12

RESTRICTIONS ON PRODUCT USE oz070ae8¢ @ TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. @ The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. @ GaAs (Gallium Arsenide) is a substance used in the products described in this document. GaAs dust or vapor is harmful to the human body. Do not break, cut, crushu or dissolve chemically. @ The products described in this document are subject to the foreign exchange and foreign trade laws. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 6 2003-03-12