TLP141G

TLP141G TOSHIBA | Alldatasheet

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TOSHIBA Photocoupler GaAs Ired & Photo −Transistor TLP141G Programmable Controllers AC−Output Module Solid State Relay The TOSHIBA mini flat coupler TLP141G is a small outline coupler, suitable for surface mount assembly. The TLP141G consists of a photo thyristor, optically coupled to a gallium arsenide infrared emitting diode. /Gb7/G20Peak off−state voltage: 400 V (min.) /Gb7/G20Trigger LED current: 10 mA (max.) /Gb7/G20On-state current: 150 mA (max.) /Gb7/G20Isolation voltage: 2500 Vrms (min.) /Gb7/G20UL recognized: UL1577, file no. E67349 Pin Connections 1 : Anode 3 : Cathode 4 : Cathode 5 : Anode. 6 : Gate 3 4 Unit in mm TOSHIBA 11 −4C2 Weight: 0.09 g TENTATIVE

Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current I F 50 mA Forward current derating (Ta ≥ 53°C) ∆IF/°C /G2d0.7 mA / °C Peak forward current (100 µs pulse, 100 pps) I FP 1 A Reverse voltage V R 5 V LED Junction temperature T j 125 °C Peak forward voltage(RGK = 27kΩ) V DRM 400 V Peak reverse voltage(RGK = 27kΩ) V DRM 400 V On/G2dstate current I T(RMS) 150 mA On/G2dstate current derating (Ta ≥ 25°C) ∆IT / °C /G2d2.0 mA / °C Peak one cycle surge current I TSM 2 A Peak reverse gate voltage V GM 5 V Detector Junction temperature T j 100 °C Storage temperature range T stg /G2d55~125 °C Operating temperature range T opr /G2d55~100 °C Lead soldering temperature (10 s) T sol 260 °C Isolation voltage (AC, 1 min., RH ≤ 60%) (Note 1) BV S 2500 Vrms (Note 1) Device considered a two terminal device: pins 1 and 3 shorted together and pins 4, 5 and 6 shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage V AC ―/G20 ― 120 Vac Forward current I F 15 20 25 mA Operating temperature T opr /G2d25 ―/G20 85 °C Gate to cathode resistance R GK ― 27 33 k Ω Gate to cathode capacitance C GK ― 0.01 0.1 µF

Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage V F I F = 10 mA 1.0 1.15 1.3 V Reverse current I R V R = 5 V ― ― 10 µA LED Capacitance C T V = 0, f = 1 MHz ― 30 ― pF Ta = 25°C ― 10 5000 nA Off/G2dstate current I DRM VAK = 400 V RGK = 27 kΩ Ta = 100°C ― 1 100 µA Ta = 25°C ― 10 5000 nA Reverse current I RRM VKA = 70 mA RGK = 27 kΩ Ta = 100°C ― 1 100 µA On/G2dstate voltage V TM I TM = 100 mA ― 0.9 1.3 V Holding current I H R GK = 27 kΩ ― 0.2 1 mA Off/G2dstate dv / dt dv/dt V AK = 280 V, RGK = 27 kΩ 5 10 ― V / µs Anode to gate ― 20 ― Detector Capacitance C j V = 0, f = 1 MHz Gate to cathode ― 350 ― pF Coupled Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Trigger LED current I FT V AK = 6 V, RGK = 27kΩ ― 4 10 mA Turn/G2don time t on I F = 50mA, RGK = 27kΩ ― 10 ― µs Coupled dv / dt dv/dt V S = 500 V, RGK = 27kΩ 500 ― ― V / µs Capacitance (input to output) C S V S = 0, f = 1 MHz ― 0.8 ― pF Isolation resistance R S V S = 500 V, R.H. ≤ 60% 5×10 10 10 14 ― Ω AC, 1 minute 2500 ― ― AC, 1 second, in oil ― 5000 ― Vrms Isolation voltage BV S DC, 1 minute, in oil ― 5000 ― Vdc

∆VF/∆Ta - I F Forward current IF (mA) Forward voltage temperature coeffecient ∆VF/ r∆Ta (mV/°C)C (mA) 120 100 －20 0 20 40 80 100 60 IFP – DR Duty cycle ratio D R Allowable pulsed forward current I FP ( m A ) 3000 1000 100 10－3 3 10 －2 3 10 －1 3 10 0 Pulse width ≤ 100 µs Ta = 25°C IF – VF Forward voltage V F (V) Forward current I F (mA) 100 0.1 0.6 0.3 Ta = 25°C －3.2 －0.4 0.1 －2.0 －1.6 －1.2 －0.8 0.5 1 3 5 10 30 50 －2.4 0.3 Allowable forward current I F ( m A ) IF – Ta IT(RMS) – Ta Ambient temperature T a (°C) R.m.s. on-state current IT(RMS) (mA) 250 －20 200 150 100 0 40 80 100 120 60 20 IFP – VFP Pulse forward voltage V FP (V) Pulse forward current IFP ( m A) 1000 0.6 Pulse width ≤ 10 µs Pepetitive frequency = 100 Hz Ta = 25°C 1.0 2.2 2.6 3.0 300 100 1.4 1.8 －2.8

IFT – RGK Gate-cathode resistance RGK (kΩ) Trigger LED current IFT (mA) 100 3 5 10 50 100 200 30 Ta = 25°C VAK=6V RL=100Ω IFT – Ta dv / dt – RGK Gate-cathode resistance R GK ( k Ω) Critical rate of rise of Off-state voltage dv / dt (V / μs) 100 200 100 3 5 30 10 VAK=200V 400V Ta = 25°C Turn-on time t on ( μs) ton – IF Forward current I F(mA) 10 20 30 RGK=10kΩ 27kΩ Ta = 25°C RL=100Ω VAA=50V 100 Ambient temperature Ta (°C) Holding current IH ( m A ) IH – Ta 0.7 0.5 0.1 20 40 60 0.3 RGK=10kΩ 27kΩ Trigger LED current I FT ( m A ) Ambient temperature Ta (°C) 100 20 40 60 80 VAＫ=6V RL=100Ω RGK=10kΩ 27kΩ Gate-cathode capacitance CGK(μF) dv / dt – CGK Critical rate of rise of off-state voltage dv / dt (V/ μs) 0.01 500 0.001 300 0.003 0.005 100 Ta = 85°C VAK = 400V RGK= 27kΩ IH – RGK Gate-cathode resistance RGK (kΩ) Holding current I H (mA) 0.1 1 3 10 30 50 100 0.5 0.3 5 200 Ta = 25°C

/Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. /Gb7/G20The products described in this document are subject to the foreign exchange and foreign trade laws. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EBCRESTRICTIONS ON PRODUCT USE