TLP137

TLP137_07 TOSHIBA | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 9

Technical content

TOSHIBA Photocoupler GaAs IRed & Photo −Transistor TLP137 Office Machine Programmable Controllers AC / DC−Input Module Telecommunication The TOSHIBA mini flat coupler TLP137 is a small outline coupler, suitable for surface mount assembly. TLP137 consists of a gallium arsenide infrared emitting diode, optically coupled to a photo transistor, and provides high CTR at low input current. TLP137 base terminal is for the improvement of speed, reduction of dark current, and enable operation. z Collector−emitter voltage: 80V(min.) z Current transfer ratio: 100%(min.) Rank BV: 200%(min.) z Isolation voltage: 3750Vrms(min.) z UL recognized: UL1577, file No. E67349 z Current transfer ratio Current Transfer Ratio (min.) Ta = 25°C Ta =−25~75°CClassi− fication IF = 1mA VCE = 0.5V IF = 0.5mA VCE = 1.5V IF = 1mA VCE = 0.5V Marking Of Classi− fication Rank BV 200% 100% 100% BV Standard 100% 50% 50% BV, Blank (Note) Application type name for certification test, please use standard product type name, i.e. TLP137 (BV): TLP137 Pin Configurations (top view) Unit in mm TOSHIBA 11 −4C2 Weight: 0.09 g 1 : Anode 3 : Cathode 4 : Emitter 5 : Collector 6 : Base

Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current IF 50 mA Forward current derating (Ta ≥ 53°C) ΔIF / °C −0.7 mA / °C Peak forward current (100μs pulse, 100pps) IFP 1 A Reverse voltage VR 5 V LED Junction temperature Tj 125 °C Collector−emitter voltage VCEO 80 V Collector−base voltage VCBO 80 V Emitter−collector voltage VECO 7 V Emitter−base voltage VEBO 7 V Collector current IC 50 mA Peak collector current (10ms pulse, 100pps) ICP 100 mA Power dissipation PC 150 mW Power dissipation derating (Ta ≥ 25°C) ΔPC / °C −1.5 mW / °C Detector Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Operating temperature range Topr −55~100 °C Lead soldering temperature (10s) Tsol 260 °C Total package power dissipation PT 200 mW Total package power dissipation derating (Ta ≥ 25°C) ΔPT / °C −2.0 mW / °C Isolation voltage (AC, 1min., RH ≤ 60%) (Note 1) BV S 3750 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4, 5 and 6 shorted together.

Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10mA 1.0 1.15 1.3 V Reverse current IR VR = 5V ― ― 10 μA LED Capacitance C T V = 0, f = 1MHz ― 30 ― pF Collector−emitter breakdown voltage V(BR)CEO IC = 0.5mA 80 ― ― V Emitter−collector breakdown voltage V(BR)ECO IE = 0.1mA 7 ― ― V Collector−base breakdown voltage V(BR)CBO IC = 0.1mA 80 ― ― V Emitter−base breakdown voltage V(BR)EBO IE = 0.1mA 7 ― ― V VCE = 48V ― 10 100 nA Collector dark current ICEO VCE = 48V, Ta = 85°C ― 2 50 μA Collector dark current ICER VCE = 48V, Ta = 85°C RBE = 1MΩ ― 0.5 10 μA Collector dark current ICBO V CB = 10V ― 0.1 ― nA DC forward current gain hFE V CE = 5V, IC = 0.5mA ― 1000 ― ― Detector Capacitance (collector to emitter) CCE V= 0, f = 1MHz ― 12 ― pF Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit 100 ― 1200 Current transfer ratio IC / IF IF = 1mA, VCE = 0.5V Rank BV 200 ― 1200 50 ― ― Low input CTR IC / IF(low) IF = 0.5mA, VCE = 1.5V Rank BV 100 ― ― Base photo−current I PB I F = 1mA, VCB = 5V ― 5 ― μA IC = 0.5mA, IF = 1mA ― ― 0.4 ― 0.2 ― Collector-emitter saturation voltage VCE(sat) IC = 1mA, IF = 1mA Rank BV ― ― 0.4 V Off−state collector current IC(off) V F = 0.7V, VCE = 48V ― ― 10 μA

Coupled Electrical Characteristics (Ta = −25~75°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit 50 ― ― Current transfer ratio IC / IF IF = 1mA, VCE = 0.5V Rank BV 100 ― ― ― 50 ― Low input CTR IC / IF(low) IF = 0.5mA, VCE = 1.5V Rank BV ― 100 ― Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Capacitance (input to output) CS VS = 0, f = 1MHz ― 0.8 ― pF Isolation resistance RS V = 500V 5×10 ― Ω AC, 1minute 3750 ― ― AC, 1second, in oil ― 10000 ― Vrms Isolation voltage BVS DC, 1 minute, in oil ― 10000 ― Vdc Switching Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Rise time tr ― 8 ― Fall time tf ― 8 ― Turn−on time ton ― 10 ― Turn−off time toff VCC = 10V, IC = 2mA RL = 100Ω ― 8 ― μs Turn−on time tON ― 10 ― Storage time tS ― 50 ― Turn-off time tOFF RL = 4.7 kΩ (Fig.1) RBE = OPEN VCC = 5 V, IF = 1.6mA ― 300 ― μs Turn−on time tON ― 12 ― Storage time tS ― 30 ― Turn-off time tOFF RL = 4.7kΩ (Fig.1) RBE = 470kΩ VCC = 5 V, IF = 1.6mA ― 100 ― μs Fig. 1 Switching time test circuit RBE RL IF VCC VCE VCC VCE IF 0.5V 4.5V tOFF tON tS

Ambient temperature Ta (°C) Allowable collector power dissipation P C ( m w ) 200 －20 160 120 0 40 80 100 120 60 20 Allowable forward current I F (mA) 120 100 －20 0 20 40 80 100 Ambient temperature Ta (°C) IFP – DR Duty cycle ratio D R Pulse forward current I FP ( m A ) 3000 1000 500 300 100 10－3 3 10 －2 3 10 －1 3 10 0 PULSE WIDTH ≦ 100 μs Ta = 25°C IF – VF Forward voltage V F (V) Forward current I F ( m A ) 100 0.1 0.6 0.5 0.3 Ta = 25°C ⊿ V F / ⊿Ta － I F Forward current IF ( m A ) Forward voltage temperature coefficient ⊿VF / ⊿Ta(mV /ﾟ C) －3.2 －0.4 0.1 －2.0 －1.6 －1.2 －0.8 0.5 1 3 5 10 30 50 －2.4 0.3 －2.8 IFP – VFP Pulse forward voltage V FP (V) Pulse forward current I FP ( m A ) 1000 0.6 Pulse width ≦ 10 μs Repetitive frequency = 100 Hz Ta = 25°C 1.0 2.2 2.6 3.0 500 300 100 1.4 1.8 IF – Ta PC – Ta

IC – VCE Collector-emitter voltage V CE (V) Collector current I C ( m A ) 1.0 0.2 0.4 0.8 0.6 Ta = 25°C IF = 1.0mA 0.8mA 0.6mA 0.5mA 0.4mA 0.2mA IC / IF – IF Forward current IF (mA) Current transfer ratio I C / IF (%) 1000 0.1 500 300 100 0.3 0.5 1 3 5 10 Sample A Sample B Ta = 25°C V CE = 5V V CE = 1.5V V CE = 0.5V IC – IF Forward current IF (mA) Collector current I C (mA) 0.03 0.1 0.5 0.3 0.1 0.3 0.5 1 3 5 10 Sample A Sample B Ta = 25°C V CE = 5V V CE = 1.5V V CE = 0.5V 0.05 IC – IF at RBE Forward current I F ( m A ) Collector current I C (mA) 0.1 0.1 0.5 0.3 0.5 1 5 3 10 0.3 RBE=∞ 500kΩ 100kΩ 50kΩ RBE IF Ta=25°C VCE=5V VCC A RBE IC – VCE Collector Current I C (mA) Collector-emitter voltage V CE(V) 2 4 8 6 Ta = 25°C IF = 1.0mA 0.8mA 0.6mA 0.5mA 0.4mA 0.2mA IPB – IF Forward current I F ( m A ) Base photo current I PB ( μA) VCB=0V VCB=5V 300 0.1 0.1 0.3 1 3 5 10 100 0.3 0.5 Ta=25°C A IF VCB

VCE(sat) – Ta Ambient temperature Ta (°C) Collector -emitter saturation voltage V CE (sat) (V) 100 0.16 －40 0.04 0.14 0.10 0.06 －20 20 80 40 0.12 0.08 IF = 1mA IC = 0.5mA 0.02 Load resistance R L ( k Ω) Switching time ( μs) 300 1 3 10 30 50 100 100 Switching Time – RL tOFF tON tS Ta = 25°C IF=1.6mA VCC=5V RBE=470kΩ Collector dark current I D (I CEO) (μA) Ambient temperature Ta (°C) ICEO – Ta 120 0 20 40 80 60 101 100 10-1 10-4 10-3 10-2 100 24V VCE=48V 10V IC – Ta Collector current I C (mA) Ambient temperature Ta (°C) 0.05 －20 0.5 0.3 0.1 VCE=1.5V V CE=0.5V IF = 2mA 1mA 0.5mA 0.2mA 0 20 40 60 80 100

Base-emitter resistance R BE ( Ω) Switching time ( μs) Switching Time – RBE 1000 100k 300k 1M 3M ∞ 300 100 500 tOFF tON tS N Ta = 25°C IF=1.6mA VCC=5V RL=4.7kΩ Load resistance R L ( k Ω) Swithing time ( μs) Switching Time – RL 5000 1 3 10 50 100 1000 500 300 3000 100 30 5 tON tS N tOFF Ta = 25°C IF=1.6mA VCC=5V

RESTRICTIONS ON PRODUCT USE 20070701-EN

• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity a nd vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
• The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dus t or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically.
• Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.