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TOSHIBA Photocoupler GaAs Ired & Photo −Transistor TLP130 Programmable Controllers AC / DC−Input Module Telecommunication The TOSHIBA mini flat coupler TLP130 is a small outline coupler, suitable for surface mount assembly. TLP130 consists of a photo transistor, optically coupled to two gallium arsenide infrared emitting diode connected inverse parallel, and operate directly by AC input current. /Gb7/G20Collector−emitter voltage: 80V(min.) /Gb7/G20Current transfer ratio: 50%(min.) Rank GB: 100%(min.) /Gb7/G20Isolation voltage: 3750Vrms(min.) /Gb7/G20UL recognized: UL1577, file no.E67349 /Gb7/G20Current transfer ratio Current Transfer Ratio IF = 5mA, VCE = 5V, Ta = 25°C Classi/G2d fication Min. Max. Marking Of Classification Standard 50 600 Blank, Y, GR, GB Rank GB 100 600 GB,GR (Note) Application type name for certification test, please use standard puroduct type name, i.e. TLP130(GB): TLP130 1 : Anode, Cathode 3 : Cathode, Anode 4 : Emitter 5 : Collector 6 : Base 4 3 1 6 Unit in mm TOSHIBA 11 −4C2 Weight: 0.09 g

Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current I F(RMS) 50 mA Forward current derating (Ta≥53°C) ∆IF / °C /G2d0.7 mA / °C Peak forward current (100µs pulse,100pps) I FP 1 A LED Junction temperature T j 125 °C Collector/G2demitter voltage V CEO 80 V Collector/G2dbase voltage V CBO 80 V Emitter/G2dcollector voltage V ECO 7 V Emitter/G2dbase voltage V EBO 7 V Collector current I C 50 mA Peak collector current (10ms pulse,100pps) I CP 100 mA Power dissipation P C 150 mW Power dissipation derating (Ta≥25°C) ∆PC / °C /G2d1.5 mW / °C Detector Junction temperature T j 125 °C Storage temperature range T stg /G2d55~125 °C Operating temperature range T opr /G2d55~100 °C Lead soldering temperature (10s) T sol 260 °C Total package power dissipation P T 200 mW Total package power dissipation derating (Ta≥25°C) ∆PT / °C /G2d2.0 mW / °C Isolation voltage (AC, 1min., RH ≤ 60%) (Note 1) BV S 3750 Vrm s (Note 1) Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4, 5 and 6 shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage V CC ― 5 48 V Forward current I F(RMS) ― 16 25 mA Collector current I C ― 1 10 mA Operating temperature T opr /G2d25 ― 85 °C

Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage V F IF = ±10mA 1.0 1.15 1.3 V LED Capacitance C T V = 0, f = 1MHz ― 60 ― pF Collector/G2demitter breakdown voltage V(BR)CEO IC = 0.5mA 80 ― ― V Emitter/G2dcollector breakdown voltage V(BR)ECO IE = 0.1mA 7 ― ― V Collector/G2dbase breakdown voltage V(BR)CBO IC = 0.1mA 80 ― ― V Emitter/G2dbase breakdown voltage V(BR)EBO IE = 0.1mA 7 ― ― V VCE = 48V ― 10 100 nA Collector dark current I CEO VCE = 48V, Ta = 85°C ― 2 50 µA Collector dark current I CER VCE = 48V, Ta = 85°C RBE = 1MΩ ― 0.5 10 µA Collector dark current I CBO V CB = 10V ― 0.1 ― nA DC forward current gain h FE V CE = 5V, IC = 0.5mA ― 400 ― ― Detector Capacitance collector to emitter CCE V = 0 , f = 1MHz ― 10 ― pF Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit 50 ― 600 Current transfer ratio I C / IF IF = ±5mA, VCE = 5V Rank GB 100 ― 600 ― 60 ― Saturated CTR I C / IF(sat) IF = ±1mA, VCE = 0.4V Rank GB 30 ― ― Base photo/G2dcurrent I PB I F = ±5mA, VCB = 5V ― 10 ― µA IC = 2.4mA, IF = ±8mA ― ― 0.4 ― 0.2 ― Collector-emitter saturation voltage VCE(sat) IC = 0.2mA, IF = ±1mA Rank GB ― ― 0.4 V Off/G2dstate collector current I C(off) IF = ±0.7mA, VCE = 48V ― 1 10 µA CTR symmetry I C(ratio) IC(IF = /G2d5mA) / IC(IF = 5mA) (Note 2) IC(ratio) = V)CE VF1,IF(IC1I V)CE VF2,IF(IC2I /G3d/G3d /G3d/G3d VCE IC2 IC1 IF2 IF1

Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Capacitance input to output C S VS=0, f=1MHz ― 0.8 ― pF Isolation resistance R S V S=500V 5 /Gb41010 1014 ― Ω AC, 1minute 3750 ― ― AC, 1second, in oil ― 10000 ― Vrms Isolation voltage BV S DC, 1 minute, in oil ― 10000 ― Vdc Switching Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Rise time t r ― 2 ― Fall time t f ― 3 ― Turn/G2don time t on ― 3 ― Turn/G2doff time t off VCC = 10V, IC = 2mA RL = 100Ω ― 3 ― µs Turn/G2don time t ON ― 2 ― Storage time t S ― 25 ― Turn-off time t OFF RL = 1.9 kΩ (Fig.1) RBE = OPEN VCC = 5 V, IF = ±16mA ― 40 ― µs Turn/G2don time t ON ― 2 ― Storage time t S ― 20 ― Turn-off time t OFF RL = 1.9kΩ (Fig.1) RBE = 220kΩ VCC = 5 V, IF = ±16mA ― 30 ― µs Fig. 1 Switching time test circuit IF VCC VCE RL RBE VCC VCE IF tON tOFF ts 4.5V 0.5V

IF – Ta Ambient temperature Ta (°C) Allowable forward current IF (mA) 100 /G2d20 0 20 40 60 80 120 100 PC – Ta Ambient temperature Ta (°C) Allowable collector power dissipation P C (mW) 200 /G2d20 160 120 0 20 40 60 80 120 100 /G44VF / /G44Ta – IF Forward current I F (mA) Forward voltage temperature Coefficient /G44VF / /G44Ta (mV / °C) /G2d3.2 /G2d0.4 0.1 /G2d0.8 /G2d2.8 /G2d2.0 /G2d1.6 /G2d1.2 0.3 /G2d2.4 1 5 50 0.5 3 10 30 IF – VF Forward voltage V F (V) Forward current I F (mA) 100 0.1 0.6 0.5 0.3 Ta = 25°C I FP – VFP Pulse forward voltage V FP (V) Pulse forward current I FP (mA) 1000 0.6 500 300 100 Pulse width ≤ 10/G6ds Repetitive Frequency = 100Hz Ta = 25°C IFP – DR Duty cycle ratio D R Pulse forward current IFP (mA) 3000 1000 300 10/G2d3 500 10/G2d2 10/G2d1 10 0 3 3 3 100 Pulse width ≤ 100/G6ds Ta = 25°C

Forward current I F (mA) IC – IF Collector current I C (mA) 100 0.1 0.3 0.3 0.5 0.5 3 10 100 1 5 50 30 V CE = 10V V CE = 5V V CE = 0.4V Ta = 25°C Sample A Sample B IC – VCE Collector–emitter voltage V CE (V) Collector current I C (mA) 20mA /G30 2 4 6 8 10 Ta = 25°C 50mA 30mA 15mA 10mA PC(MAX) IF = 5mA IC / IF – IF Forward current I F (mA) Current transfer ratio I C / IF (%) 1000 0.3 300 100 0.5 500 3 10 100 1 5 30 50 Sample B Ta = 25°C V CE = 10V V CE = 5V V CE = 0.4V Sample A IC – VCE Collector–emitter voltage V CE (V) Collector current I C (mA) /G30 IF = 50mA 40mA 30mA 20mA 10mA 5mA 2mA Ta = 25°C IC – IF at RBE Forward current I F (mA) Collector current I C (mA) 100 0.1 0.1 0.3 3 10 100 1 5 30 50 0.3 0.5 0.5 A VCC IF/G20 RBE/G20 RBE = ∞/G20500k/G57/G20100k/G57/G20 50k/G57/G20 Ta = 25°C VCE = 5V/G20 IPB – IF Forward current I F (mA) Base photo current I PB ( /G6ds) 300 0.1 0.1 0.5 100 3 10 100 1 5 30 50 0.3 0.3 Ta = 25°C VCBIF A VCB = 0V VCB = 5V

VCE(sat) – Ta Ambient temperature Ta ( ℃) Collector–emitter saturation Voltage V CE(sat) ( V ) 0.24 /G2d40 0.20 0.16 0.12 0.04 /G2d20 0 20 40 60 100 80 0.08 IF = 5mA Ic = 1mA 101 10/G2d4 0 20 40 60 80 100 120 100 10/G2d1 10/G2d2 10/G2d3 ICEO – Ta Ambient temperature Ta (°C) Collector dark current I CEO ( /G6dA) VCE = 48V 10V 24V IC – Ta Ambient temperature Ta ( ℃) Collector current I C (mA) 100 0.1 -20 0 20 40 60 80 100 0.3 0.5 10mA 5mA 0.5mA 1mA VCE = 5V IF = 25mA Switching Time – R L Load resistance R L ( k /G57) Switching time ( /G6ds) 300 100 3 10 30 50 100 5 tOFF tON ts Ta = 25°C IF = 16mA VCC = 5V RBE = 220k/G57

Switching Time – R L Load resistance R L ( k /G57) Switching time ( /G6ds) 1000 500 300 100 3 10 30 50 100 5 Ta = 25°C IF = 16mA VCC = 5V tOFF tON ts Switching Time – R BE Base-emitter resistance R BE ( /G57) Switching time ( /G6ds) 1000 100k 500 300 100 300k 1M 3M ∞ tOFF tON ts Ta = 25°C IF = 16mA VCC = 5V RL = 1.9k/G57

/Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EAARESTRICTIONS ON PRODUCT USE

Product Information

TLP130 specifications and overview.

Summary

Programmable Controllers AC / DC.Input Module Telecommunication

Description

Programmable Controllers AC / DC.Input Module Telecommunication

Source title TLP130 Datasheet(PDF) - Toshiba Semiconductor

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