TLP127

TLP127TPRUF TOSHIBA | Alldatasheet

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TOSHIBA Photocoupler GaAs Ired & Photo −T ransistor TLP127 Programmable Controllers DC−Output Module Telecommunication The TOSHIBA mini flat coupler TLP127 is a small outline coupler, suitable for surface mount assembly. TLP127 consists of a gallium arsenide infrared emitting diode, optically coupled to a darlington photo transistor with an integral base−emitter resistor, and provides 300V V CEO.

• Collector−emitter voltage: 300 V (min.)
• Current transfer ratio: 1000% (min.)
• Isolation voltage: 2500Vrms (min.)
• UL recognized: UL1577, file no. E67349
• BSI approved: BS EN60065:2002, certificate no.8927 BS EN60950-1:2002, certificate no.8928 Pin Configurations (top view) TOSHIBA 11 −4C1 Weight: 0.09 g (typ.) Unit in mm 1 : ANODE 3 : CATHODE 4 : EMITTER 6 : COLLECTOR 4 3

Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current IF 50 mA Forward current derating ΔIF / °C −0.7 (Ta ≥ 53°C) mA / °C Pulse forward current IFP 1 (100μs pulse, 100pps) A Reverse voltage VR 5 V LED Junction temperature Tj 125 °C Collector−emitter voltage VCEO 300 V Emitter−collector voltage VECO 0.3 V Collector current IC 150 mA Collector power dissipation PC 150 mW Collector power dissipation derating (Ta ≥ 25°C) ΔPC / °C −1.5 mW / °C Detector Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Operating temperature range Topr −55~100 °C Lead soldering temperature Tsol 260 (10s) °C Total package power dissipation PT 200 mW Total package power dissipation derating (Ta ≥ 25°C) ΔP T / °C −2.0 mW / °C Isolation voltage (Note 1) BV S 2500 (AC, 1min., R.H. ≤ 60%) Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Device considered a two terminal device: Pins 1, 3 shorted together and pins 4, 6 shorted together.

Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF I F = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5V ― ― 10 μA LED Capacitance C T V = 0, f = 1 MHz ― 30 ― pF Collector−emitter breakdown voltage V(BR) CEO I C = 0.1 mA 300 ― ― V Emitter−collector breakdown voltage V(BR) ECO I E = 0.1 mA 0.3 ― ― V VCE = 200 V ― 10 200 nA Collector dark current ICEO VCE = 200 V, Ta = 85°C ― ― 20 μA Detector Capacitance collector to emitter CCE V = 0, f = 1 MHz ― 12 ― pF Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIn. Typ. Max. Unit Current transfer ratio IC / IF IF = 1mA, VCE = 1 V 1000 4000 ― % Saturated CTR IC / IF (sat) IF = 10 mA, VCE = 1 V 500 ― ― % IC = 10 mA, IF = 1 mA ― ― 1.0 Collector−emitter saturation voltage VCE (sat) IC = 100 mA, IF = 10 mA 0.3 ― 1.2 V Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Capacitance (input to output) C S VS = 0, f = 1 MHz ― 0.8 ― pF Isolation resistance RS VS = 500 V, R.H.≤ 60% 5×10 ― Ω AC, 1 minute 2500 ― ― AC, 1 second, in oil ― 5000 ― Vrms Isolation voltage BVS DC, 1 minute, in oil ― 5000 ― V dc

Switching Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Rise time tr ― 40 ― Fall time tf ― 15 ― Turn−on time ton ― 50 ― Turn−off time toff VCC = 10 V, IC = 10 mA RL = 100 Ω ― 15 ― μs Turn−on time tON ― 5 ― Storage time ts ― 40 ― Turn−off time tOFF RL = 180 Ω (Fig.1) VCC = 10 V, IF = 16 mA ― 80 ― μs Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC ― ― 200 V Forward current IF ― 16 25 mA Collector current IC ― ― 120 mA Operating temperature Topr −25 ― 85 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Fig. 1 Switching time test circuit IF VCC VCE RL VCC VCE IF tON tOFF ts

IF – Ta Ambient temperature Ta (°C) Allowable forward current IF (mA) 100 −20 0 20 40 60 80 120 100 PC – Ta Ambient temperature Ta (°C) Allowable collector power dissipation P C (mW) 200 −20 160 120 0 20 40 60 80 120 100 ΔVF / ΔTa – IF Forward current I F (mA) Forward voltage temperature coefficient ΔVF / ΔTa (mV / °C) −3.2 −0.4 0.1 −0.8 −2.8 −2.0 −1.6 −1.2 0.3 −2.4 1 5 50 0.5 3 10 30 IFP – DR Duty cycle ratio D R Pulse forward current I FP (mA) 3000 1000 300 100 10−3 500 10−2 10−1 10 0 3 3 3 Pulse width ≤ 100μs Ta = 25°C IF – VF Forward voltage V F (V) Forward current I F ( m A ) 100 0.1 0.6 0.5 0.3 Ta = 25°C I FP – VFP Pulse forward voltage V FP (V) Pulse forward current I FP ( m A ) 1000 0.6 500 300 100 Pulse width ≤ 10μs Repetitive Frequency = 100Hz Ta = 25°C

Collector–emitter voltage V CE (V) IC – VCE Collector current I C ( m A ) 160 0.4 120 0.8 1.2 1.6 2.0 1mA 2mA 4mA 10mATa = 25°C IF = 0.5mA Load resistance R L ( k Ω) Switching Time – RL Switching time ( μs) 1000 500 100 300 300 3k 10k 1k 5k 100 500 tOFF(IF = 16mA) tOFF(IF = 1.6mA) tON(IF = 1.6mA) tON(IF = 16mA) Ta = 25°C VCC = 10V IC – IF Forward current I F ( m A ) Collector current I C ( m A ) 300 0.5 100 1 3 10 30 100 5 50 Sample A Sample B Ta = 25°C V CE = 1.2V V CE = 1V IC / IF – IF Forward current I F ( m A ) Current transfer ratio I C / IF (%) 10000 100 0.3 0.5 3 5 10 30 50 5000 1000 500 300 3000 Ta = 25°C V CE = 1.2V V CE = 1V Sample B Sample A

ICEO – Ta Ambient temperature Ta ( ℃) Collector dark current I CEO ( μA) 10−4 0 20 40 60 100 80 10−1 10−2 10−3 VCE = 200V 150V 80V IC – Ta Ambient temperature Ta ( ℃) Collector current I C ( m A ) 120 -20 0 20 40 60 80 100 100 -40 IF = 10mA 1mA VCE = 1V V CE(sat) – Ta Ambient temperature Ta ( ℃) Collector-emitter saturation voltage V CE(sat) (V) 1.2 0.4 1.0 0.8 0.6 0.2 -20 0 20 40 60 80 100 -40 IF = 1mA IC = 10mA

RESTRICTIONS ON PRODUCT USE

• Toshiba Corporation, and its subsidiaries and affiliates (collect ively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduc ed without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
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