TLP126

TLP126 TOSHIBA | Alldatasheet

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TOSHIBA Photocoupler GaAs Ired & Photo −Transistor TLP126 Programmable Controllers AC / DC−Input Module Telecommunication The TOSHIBA mini flat coupler TLP126 is a small outline coupler, suitable for surface mount assembly. TLP126 consists of a photo transistor, optically coupled to a gallium arsenide infrared emitting diode connected inverse parallel, and provides high CTR at low AC input current. /Gb7/G20Collector−emitter voltage: 80 V (min.) /Gb7/G20Current transfer ratio: 100% (min.) /Gb7/G20Isolation voltage: 3750Vrms (min.) /Gb7/G20UL recognized: UL1577, file No. E67349 Unit in mm TOSHIBA 11 −4C1 Weight: 0.09 g Pin Configurations (top view) 1 : Anode, Cathode 3 : Cathode, Anode 4 : Emitter 6 : Collector

Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current I F(RMS) 50 mA Forward current derating (Ta≥ 53°C) ∆ ∆IF / °C /G2d0.7 mA / °C Peak forward current(100µs pulse,100pps) I FP 1 A LED Junction temperature T j 125 °C Collector/G2demitter voltage V CEO 80 V Emitter/G2dcollector voltage V ECO 7 V Collector current I C 50 mA Peak collector current(10ms pulse,100pps) I CP 100 mA Power dissipation P C 150 mW Power dissipation derating (Ta ≥ 25°C) ∆PC / °C /G2d1.5 mW / °C Detector Junction temperature T j 125 °C Storage temperature range T stg /G2d55~125 °C Operating temperature range T opr /G2d55~100 °C Lead soldering temperature(10 sec.) T sold 260 °C Total package power dissipation P T 200 mW Total package power dissipation derating (Ta≥25°C) ∆PT / °C /G2d2.0 mW / °C Isolation voltage (AC, 1min., RH ≤ 60%) (Note 1) BV S 3750 Vrms (Note 1) Device considered a two terminal device: Pins1, and 3 shorted together and 4 and 6 shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage V CC ―/G20 5 48 V Forward current I F(RMS) ― 1.6 20 mA Collector current I C ―/G20 1 10 mA Operating temperature T opr /G2d25 ―/G20 75 °C

Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage V F I F = ±10 mA 1.0 1.15 1.3 V LED Capacitance C T V = 0, f = 1 MHz ― 60 ― pF Collector/G2demitter breakdown voltage V(BR) CEO IC = 0.5 mA 80 ― ― V Emitter/G2dcollector breakdown voltage V(BR) ECO IE = 0.1 mA 7 ― ― V VCE = 48 V ― 10 100 nA Collector dark current I CEO VCE = 48 V, Ta = 85°C ― 2 50 µA Detector Capacitance collector to emitter C CE V = 0, f = 1 MHz ― 12 ― pF Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIn. Typ. Max. Unit Current transfer ratio I C / IF IF = ±1 mA, VCE = 0.5 V 100 ― 1200 % Low input CTR I C / IF (low) IF = ±0.5 mA, VCE = 1.5 V 50 ― ― % IC = 0.5 mA, IF = ±1 mA ― ― 0.4 Collector/G2demitter saturation voltage VCE (sat) IC = 1 mA, IF = ±1 mA ― 0.2 ― V Off/G2dstate collector current I C(off) V F = ± 0.7V, VCE = 48 V ― 1 10 µA CTR symmetry I C (ratio) IC (IF = /G2d1mA) / IC (IF = 1mA) 0.3 ― 3 — Coupled Electrical Characteristics (Ta = /G2d/G2d/G2d/G2d25~75°C) Characteristic Symbol Test Condition MIn. Typ. Max. Unit Current transfer ratio I C / IF IF = 1 mA, VCE = 0.5 V 50 ― ― % Low input CTR I C / IF (low) IF = 0.5 mA, VCE = 1.5 V ― 50 ― %

Isolation characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Capacitance input to output C S VS = 0, f = 1 MHz ― 0.8 ― pF Isolation resistance R S VS = 500 V 5×10 10 10 14 ― Ω AC, 1 minute 3750 ― ― AC, 1 second, in oil ― 10000 ― Vrms Isolation voltage BV S DC, 1 minute, in oil ― 10000 ― Vdc Switching Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Rise time t r ― 8 ― Fall time t f ― 8 ― Turn/G2don time t on ― 10 ― Turn/G2doff time t off VCC = 10 V, IC = 2 mA RL = 100Ω ― 8 ― µs Turn/G2don time t ON ― 10 ― Storage time t S ― 50 ― Turn/G2doff time t OFF RL = 4.7 kΩ (Fig.1) VCC = 5 V, IF = ±1.6 mA ― 300 ― µs Fig. 1 Switching time test circuit VCC VCE IF tON tOFF ts 4.5V 0.5V IF VCC VCE RL

IF – Ta Ambient temperature Ta (°C) Allowable forward current IF (mA) 100 /G2d20 0 20 40 60 80 120 100 PC – Ta Ambient temperature Ta (°C) Allowable collector power dissipation P C (mW) 200 /G2d20 160 120 0 20 40 60 80 120 100 /G44VF / /G44Ta – IF Forward current I F (mA) Forward voltage temperature coefficient /G44VF / /G44Ta (mV / °C) /G2d3.2 /G2d0.4 0.1 /G2d0.8 /G2d2.8 /G2d2.0 /G2d1.6 /G2d1.2 0.3 /G2d2.4 1 5 50 0.5 3 10 30 IFP – DR Duty cycle ratio D R Pulse forward current I FP (mA) 3000 1000 300 100 10/G2d3 500 10/G2d2 10/G2d1 10 0 3 3 3 Pulse width ≤ 100/G6ds Ta = 25°C IF – VF Forward voltage V F (V) Forward current I F (mA) 100 0.1 0.6 0.5 0.3 Ta = 25°C I FP – VFP Pulse forward voltage V FP (V) PULSE FORWARD CURRENT I FP ( m A ) 1000 0.6 500 300 100 Pulse width ≤ 10/G6ds Repetitive Frequency = 100Hz Ta = 25°C

Forward current I F (mA) IC – VCE Collector–emitter voltage V CE (V) Collector current I C (mA) /G30 IF = 1.0mA 0.8mA 0.6mA 0.5mA 0.4mA 0.2mA Ta = 25°C Forward current I F (mA) IC – IF Collector current I C (mA) 0.03 0.1 0.3 0.5 0.5 3 10 1 5 0.05 0.1 0.3 Sample A Ta = 25°C V CE = 5V V CE = 1.5V V CE = 0.5V Sample B ICEO – Ta Ambient temperature Ta (°C) Collector dark current I CEO ( /G6dA) 101 10/G2d4 0 20 40 60 80 100 120 100 10/G2d1 10/G2d2 10/G2d3 VCE = 48V 10V 24V IC / IF – IF Current transfer ratio I C / IF (%) /G31/G30/G30/G30 /G33/G30 0.1 /G35/G30 /G33/G30/G30 /G31/G30/G30 0.5 /G35/G30/G30 3 10 1 5 0.3 Sample A Ta = 25°C Sample B V CE = 5V V CE = 1.5V V CE = 0.5V IC – VCE Collector–emitter voltage V CE (V) Collector current I C (mA) /G30 2 4 6 8 10 Ta = 25°C 0.8mA IF = 1.0mA 0.6mA 0.5mA 0.4mA 0.2mA

Collector current I C (mA) Switching Time – RL Load resistance R L ( k /G57) Switching time ( /G6ds) tOFF tON ts 5000 300 3000 1000 500 3 10 30 50 100 5 100 Ta = 25°C IF = 1.6mA VCC = 5V IC – Ta Ambient temperature Ta ( ℃) 0.05 -20 0.5 0 20 40 60 80 100 0.3 0.1 V CE = 1.5V V CE = 0.5V 1mA 0.5mA 0.2mA IF = 2mA VCE(sat) – Ta Ambient temperature Ta ( ℃) Collector–emitter saturation voltage VCE(sat) ( V ) 0.14 /G2d40 0.12 0.10 0.08 0.04 /G2d20 0 20 40 60 100 80 0.06

0.02 IF = 1mA

Ic = 0.5mA

/Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. /Gb7/G20The products described in this document are subject to the foreign exchange and foreign trade laws. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EBCRESTRICTIONS ON PRODUCT USE