TLP120

TLP120 TOSHIBA | Alldatasheet

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TOSHIBA Photocoupler GaAs Ired & Photo-Transistor TLP120 Programmable Controllers AC / DC−Input Module Telecommunication The TOSHIBA mini flat coupler TLP120 is a small outline coupler, suitable for surface mount assembly. TLP120 consists of a photo transistor, optically coupled to two gallium arsenide infrared emitting diode connected inverse parallel, and can operate directly by AC input current. /G6c/G20Collector−emitter voltage: 80 V (min.) /G6c/G20Current transfer ratio: 50% (min.) Rank GB: 100% (min.) /G6c/G20Isolation voltage: 3750Vrms (min.) /G6c/G20UL recognized: UL1577, file no. E67349 Pin Configurations (top view) 1： Anode Cathode 3： Cathode Anode 4： Emitter 6： Collector TOSHIBA 11 −4C1 Weight: 0.09 g Unit in mm

Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current I F(RMS) 50 mA Forward current derating ∆IF / °C /G2d0.7 (Ta ≥ 53°C) mA / °C Pulse forward current I FP 1 (100µs pulse, 100pps) A LED Junction temperature T j 125 °C Collector/G2demitter voltage V CEO 80 V Emitter/G2dcollector voltage V ECO 7 V Collector current I C 50 mA Collector power dissipation P C 150 mW Collector power dissipation derating (Ta ≥ 25°C) ∆PC / °C /G2d1.5 mW / °C Detector Junction temperature T j 125 °C Storage temperature range T stg /G2d55~125 °C Operating temperature range T opr /G2d55~100 °C Lead soldering temperature T sol 260 (10s) °C Total package power dissipation P T 200 mW Total package power dissipation derating (Ta ≥25°C) ∆PT / °C /G2d2.0 mW / °C Isolation voltage (Note 1) BV S 3750 (AC, 1min., R.H. ≤ 60%) Vrms (Note 1) Device considered a two terminal device: Pins1, 3 shorted together and pins 4, 6 shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage V CC ―/G20 5 48 V Forward current I F(RMS) ― 16 20 mA Collector current IC ―/G20 1 10 mA Operating temperature T opr /G2d25 ―/G20 85 °C

Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage V F I F = ±10 mA 1.0 1.15 1.3 V LED Capacitance C T V = 0, f = 1 MHz — 60 — pF Collector/G2demitter breakdown voltage V(BR)CEO I C = 0.5 mA 80 — — V Emitter/G2dcollector breakdown voltage V(BR)ECO I E = 0.1 mA 7 — — V VCE = 48 V — 10 100 nA Collector dark current I CEO VCE = 48 V, Ta = 85°C — 2 50 µA Detector Capacitance (collector to emitter) CCE V = 0, f = 1 MHz — 10 — pF Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIn. Typ. Max. Unit 50 — 600 Current transfer ratio I C / IF IF = ±5 mA, VCE = 5 V Rank GB 100 — 600 — 60 — Saturated CTR I C / IF (sat) IF = ±1 mA, VCE = 0.4 V Rank GB 30 — — IC = 2.4 mA, IF = ±8 mA — — 0.4 — 0.2 — Collector/G2demitter saturation voltage VCE (sat) IC = 0.2 mA, IF = ±1 mA Rank GB — — 0.4 V Off/G2dstate collector current I C(off) V F = ± 0.7V, VCE = 48 V — 1 10 µA CTR symmetry I C (ratio) IC (IF = /G2d5mA) / IC (IF = 5mA) 0.33 1 3 — Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Capacitance (input to output) CS VS = 0, f = 1 MHz — 0.8 — pF Isolation resistance R S VS = 500 V, R.H. ≤ 60% 5×10 10 1014 — Ω AC, 1 minute 3750 — — AC, 1 second, in oil — 10000 — Vrms Isolation voltage BV S DC, 1 minute, in oil — 10000 — V dc

Switching Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Rise time t r — 2 — Fall time t f — 3 — Turn/G2don time t on — 3 — Turn/G2doff time t off VCC = 10 V, IC = 2 mA RL = 100Ω — 3 — µs Turn/G2don time t ON — 2 — Storage time t s — 25 — Turn/G2doff time t OFF RL = 1.9 kΩ (Fig.1) VCC = 5 V, IF = ±16 mA — 40 — µs Fig. 1 Switching time test circuit VCE VCC RL IF tOFF tON 0.5V VCE IF tS 4.5V VCC

Ambient temperature Ta (°C) 60 120 40 80 20 0 Allowable forward current IF ( m A ) I F – Ta 100 -20 100 P C – Ta Ambient temperature Ta (°C) 0 20 40 60 80 120 200 Allowable collector power dissipation P C (mW) - 20 160 100 120 Pulse forward current IFP ( m A ) IFP – DR Duty cycle ratio D R 3000 1000 500 100 10-1 10-210-3 3 3 3 300 100 ΔVF / ΔＴa – IF Forward current I F (mA) 0.1 0.3 3 5 50 1 -3.2 -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 30 10 0.5 Forward voltage temperature coefficient ΔVF /ΔＴa（mＶ/ ℃） IFP - VFP Pulse forward voltage V FP (V) Pulse forward current I FP (mA) 1000 300 100 Pulse width ≤ 10µs Repetitive Frequency = 100Hz Ta = 25°C 500 1.0 IF - VF Forward voltage V F (V) Forward current IF (mA) 100 0.4 0.5 0.8 1.2 1.6 0.1 1.8 1.4 0.3

50 Ta = 25°C

1.0 Pulse width ≤ 100µs Ta = 25°C

Ambient temperature Ta (°C) Collector dark current I CEO ( µ A ) 101 120 100 80 60 40 20 0 24V 10V VCE = 48V 100 10-1 10-2 10-3 10-4 IC – VCE Collecor-emitter voltage V CE ( V ) Collector current IC (mA) 2 4 6 8 10 Ta = 25°C 10mA 15mA 20mA 50mA PC(MAX) IF = 5mA 30mA Forward current I F (mA) Collector current I C (mA) 30 0.3 0.3 3 100 1 5 50 100 30 10 0.5 0.5 Ta = 25°C SAMPLE B SAMPLE A VCE = 10V VCE = 5V VCE = 0.4V IC / IF - IF Forward current I F (mA) 100 50 30 10 5 3 0.5 1 1000 500 300 100 Current transfer ratio I Ｃ / I F ( % ) SAMPLE B SAMPLE A Ta = 25°C 0.3 VCE = 10V VCE = 5V VCE = 0.4V IC - VCE 0 0.2 0.4 0.6 0.8 Collector-emitter voltage V CE (V) Ta = 25°C Collector current IC (mA) 1.0 20mA 30mA 40mA 10mA 5mA 2mA IF = 50mA

Ambient temperature Ta (°C) Collector current I C (mA) 100 100 80 60 20 0 -20 0.1 IF = 25mA 0.5 0.3 0.5 VCE = 5V Switching Time - R L Load resistance R L ( k Ω) Switching time (µs) 100 50 30 10 5 3 1 tOFF ts tON Ta = 25°C IF = 16mA VCC = 5V 300 500 1000 100 VCE(sat) – Ta Ambient temperature Ta ( °C) Collector-emitter saturation voltage V CE(sat) (V) 0.24 0.20 20 40 60 80 100 0.16 0.08 0.04 -20 -40 0.12 IF = 5mA IC = 1mA

/Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. /Gb7/G20The products described in this document are subject to the foreign exchange and foreign trade laws. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EBCRESTRICTIONS ON PRODUCT USE