TLP115A

TLP115A_07 TOSHIBA | Alldatasheet

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TOSHIBA Photocoupler GaA ℓA s Ired & Photo-IC TLP115A High Speed, Long Distance Isolated Line Receiver Microprocessor System Interfaces Digital Isolation For A / D, D / A Conversion Computer−Peripheral Interfaces Ground Loop Elimination The TOSHIBA mini flat coupler TLP115A is a small outline coupler, suitable for surface mount assembly. TLP115A consists of a high output power GaAℓAs light emitting diode, optically coupled to an integrated high gain, high speed shielded photo detector whose output is an open collector schottky clamped transistor. The shield, which shunts capacirively coupled common noise to ground, provides a guaranteed transient immunity specification of 1000V / μs. z Input current thresholds: IF = 5mA (max.) z Switching speed: 10MBd (typ.) z Common mode transient immunity: ± 1000V / μs (min.) z Guaranteed performance over temp. : 0~70°C z Isolation voltage: 2500Vrms (min.) z UL recognized: UL1577, file no. E67349 Schematic VCC GND VO ICC IO VF Shield Note. A 0.1 μF bypass capacitor must be connected between pins 4 and 6. Pin Configuration (top view) 1 : Anode 3 : Cathode 4 : GND 5 : V O(Output) 6 : VCC GND 3 4 6VCC Truth Table (positive logic) Input Output H L L H TOSHIBA 11 −4C2 Weight: 0.09g Unit in mm

Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current (Note 1) I F 20 mA Pulse forward current (Note 2) I FP 40 mA Peak transient forward current (Note 3) I FPT 1 A LED Reverse voltage VR 5 V Output current IO 25 mA Output voltage VO 7 V Supply voltage(1 minute maximum) VCC 7 V Detector Output power dissipation Po 40 mW Operating temperature range Topr −40~85 °C Storage temperature range Tstg −55~125 °C Lead solder temperature(10 sec.) Tsol 260 °C Isolation voltage(AC, 1 min., RH≤ 60%, Note 4) BV S 2500 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Derate 0.36mA / °C above 70°C. (Note 2) 50% duty cycle, 1ms pulse width. Derate 0.72mA / °C above 70°C. (Note 3) Pulse width ≤ 1μs, 300pps. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Input voltage, low level VFL −3 0 1.0 V Input current, high level IFH 6.3 8 20 mA Supply voltage VCC 4.5 5 5.5 V Fan out (TTL load, each channel) N ― ― 8 ― Operating temperature Topr 0 ― 70 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guide line respectively. In developing designs using this product, please confirm specified characteristics shown in this document.

Electrical Characteristics (unless otherwise specified, Ta = 0~70°C, VCC = 4.5 ~ 5.5V, VFL ≤ 1.0V) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF I F = 10mA, Ta =25°C 1.2 1.4 1.7 V Forward voltage temperature coefficient V F / Ta IF = 10mA ― −2 ― mV / °C Reverse current IR V R = 3V, Ta = 25°C ― ― 10 μA Capacitance between terminals CT V F = 0, f = 1MHz, Ta = 25°C ― 30 ― PF High level output voltage IOH μA Low level output current VOL IF = 5mA IOL = 13mA (sinking) ― 0.4 0.6 V "H level output→L level output" input current IFH IOL = 13mA (sinking) VOL = 0.6V ― ― 5 mA High level supply current ICCH V CC = 5.5V, IF = 0 ― 7 15 mA Low level supply current ICCL V CC = 5.5V, IF = 10mA ― 12 19 mA Input-output insulation leakage current I S VS = 3540V, t = 5s Ta = 25°C (Note 4) ― ― 100 μA Isolation resistance RS R.H. ≤ 60%, VS = 500V DC Ta = 25°C (Note 4) 5×1010 10 14 ― Ω Stray capacitance between input to output C S VS = 0, f = 1MHz Ta = 25°C (Note 4) ― 0.8 ― PF * All typical values are VCC = 5V, Ta = 25°C.

Switching Characteristics (VCC = 5V, Ta = 25°C) Characteristic Symbol Test Cir- cuit Test Condition Min. Typ. Max. Unit Propagation delay time (H→L) t pHL 1 IF = 0→7.5mA CL = 15pF, RL = 350Ω ― 60 120 ns Propagation delay time (L→H) t pLH 1 IF = 7.5→0mA CL = 15pF, RL = 350Ω ― 60 120 ns Output rise fall time(10−90%) t r , tf 2 RL = 350, CL = 15pF IF = 0↔7.5mA ― 30 ― ns Common mode transient immunity at high output level CM H 2 IF = 0 mA, VCM = 400Vp−p, VO(MIN)=2V RL = 350Ω 1000 ― ― V / μs Common mode transient immunity at low output level CM L 2 IF = 7.5 mA, VCM = 400Vp−p VO(MAX) = 0.8V, RL = 350Ω −1000 ― ― V / μs (Note 4) Device considered a two−terminal device: Pins 1 and 3 shorted together, and pins 4, 5 and 6 shorted together. (Note 5) The V CC supply voltage to each TLP115A isolator must be bypassed by 0.1μF capacitor. This can be either a ceramic or solid tantalum capacitor with good high frequency characteristic and should be connected as close as possible to package V CC and GND pins of each device. (Note 6) Maximum electrostatic discharge voltage for any pins: 180V(C = 200pF, R = 0)

Test Circuit 1: Switching Time Test Circuit C L is approximately 15pF which includes probe and stray wiring capacitance. Test Circuit 2: Common Mode Transient Immunity Test Circuit s) (ft (V) 320 LCMs) (rt (V) 320 HCM μ= ,μ= CL is approximately 15pF which includes probe and stray wiring capacitance. GND VCC Output monitor VC CL IF 350Ω 0.1μF 100Ω VCC = 5V Pulse input PW = 100μs Duty ratio = 1 / 10 IF monitor VO IF 7.5mA 3.75mA 0mA 4.5V 1.5V 0.5V VOL tr tf tpLH tpHL GND VCC Output monitor VO CL IF 350Ω 0.1μF VCC = 5V VO VCM Pulse generator ZO = 50Ω 400V 90% 0.8V VOL tf VCM 10% VO (IF = 10mA) (IF = 0mA) tr

IOH – Ta Ambient temperature Ta (°C) High level output current I OH ( μA) 0.5 0.3 80 60 40 20 0 - 20 0.1 VF = 1V VCC = 5.5V VO = 5.5V 0.05 ΔVF / ΔＴa – IF Forward current I F ( m A ) Forward voltage temperature coefficient ΔVF / ΔＴa (mV / °C ) -4.0 0.1 -3.2 -2.4 -1.6 0.3 0.5 1 3 5 10 30 -3.6 -2.8 -2.0 -1.2 V O – IF Forward current I F ( m A ) Output voltage V O (V) 0 2 1 5 6 4 VCC = 5V Ta = 25°C RL = 350Ω RL = 1kΩ RL = 4kΩ V O L – Ta Ambient temperature Ta (°C) 0 20 40 60 80 0.3 0.2 0.4 0.5 12.8 9.6 6.4 Low level output voltage V OL (V) IOL = 16mA IF = 5mA VCC = 5.5V VE = 2V Forward current I F ( m A ) 6 5 4 1 2 0 Output voltage V O (V) V O – IF Ta = 0°C VCC = 5V RL = 350Ω R L = 4kΩ Ta = 70°C IF – VF Forward voltage V F (V) Forward current I F ( m A ) 100 1.0 0.1 0.01 Ta = 70°C 25°C 0°C

t pHL, tpLH – Ta Ambient temperature Ta (°C) Propagation delay time t pHL, tpLH ( n s ) 300 220 Ambient temperature Ta (°C) 120 tpHL , tpLH – IF Forward current I F ( m A ) Propagation delay time t pHL, tpLH ( n s ) 120 100 18 20 - 20 0 40 20 20 0 16 14 12 10 120 RL = 4kΩ 4kΩ 1kΩ 350Ω RL = 350Ω 1kΩ 4kΩ 1kΩ RL = 350Ω 350Ω 1kΩ Rise， fall time t r, tf ( n s ) 100 260 1kΩ 350Ω 1kΩ 4kΩ RL = 4kΩ Ta = 25°C VCC = 5V tpHL tpLH RL = 350Ω RL = 4kΩ 20 40 60 80 - 20 IF = 16mA VCC = 5V tpHL tpLH IF = 16mA VCC = 5V tf tr tr, tf – Ta

RESTRICTIONS ON PRODUCT USE 20070701-EN

• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
• The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dus t or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically.
• Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.