TLP114A TOSHIBA | Alldatasheet
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TOSHIBA Photocoupler GaA ℓAs Ired & Photo−IC TLP114A Digital Logic Isolation. Line Receiver. Power Supply Control Feedback Control. Switching Power Supply. Transistor Invertor. The TOSHIBA mini flat coupler TLP114A is a small outline coupler, suitable for surface mount assembly. TLP114A consists of a high output power GaAℓAs light emitting didoe, optically coupled to a high speed detector of one chip photodiode-transistor. /Gb7/G20Isolation voltage: 3750 Vrms (min.) /Gb7/G20Switching speed: t pHL = 0.8µs, tpLH = 0.8µs (max.) (R L = 1.9 kΩ) /Gb7/G20TTL compatible /Gb7/G20UL recognized: UL1577, file no. E67349 Pin Configuration (top view) 1 : ANODE 3 : CATHODE 4 : EMITTER (GND) 5 : COLLECTOR (OUTPUT). 6 : V CC 4SHIELD Schematic VCC GND VO ICC IO 6 IF VF SHIELD TOSHIBA 11 −4C2 Weight: 0.09g Unit in mm
Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current (Note 1) I F 20 mA Pulse forward current (Note 2) I FP 40 mA Peak transient forward current (Note 3) I FPT 1 A LDE Reverse voltage V R 5 V Output current I O 8 mA Peak output current I OP 16 mA Supply voltage V CC /G2d0.5~30 V Output voltage V O /G2d0.5~20 V Detector Output power dissipation (Note 4) P O 100 mW Operating temperature range T opr /G2d55~100 °C Storage temperature range T stg /G2d55~125 °C Lead solder temperature(10 sec.) T sol 260 °C Isolation Voltage (AC,1 min., R.H.≤ 60°%) (Note 5) BVS 3750 Vrms (Note 1) Derate 0.36mA / °C above 70°C. (Note 2) 50% duty cycle, Ims pulse width. Derate 0.72mA / °C above 70°C. (Note 3) Pulse width≤ 1µs, 300pps. (Note 4) Derate 1.8mW / °C above 70°C.
Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage V F IF = 16mA 1.22 1.42 1.72 V Forward voltage temperature coefficient ∆VF / ∆Ta I F = 16mA ― /G2d2 ― mV /°C Reverse current I R VR = 3V ― ― 10 µA LDE Capacitance between terminals CT V F = 0, f = 1MHz ― 30 ― pF IOH (1) IF = 0mA, VCC = VO = 5.5V ― 3 500 nA IOH (2) IF = 0mA, VCC = 30V VO = 20V ― ― 5 High level output current IOH IF = 0mA, VCC = 30V VO = 20V, Ta = 70°C ― ― 50 µA Detector High level supply current ICCH IF = 0mA, VCC = 30V ― 0.01 1 µA Current transfer ratio I O / IF IF = 16mA, VCC = 4.5V VO = 0.4V 20 ― ― % Low level output voltage VOL IF = 16mA, VCC = 4.5V IO = 2.4 mA ― ― 0.4 V Isolation resistance R S R.H.≤ 60%, VS = 500V (Note 5) 5/Gb41010 10 14 ― Ω Coupled Stray capacitance between input to output CS V S= 0, f = 1MHz (Note 5) ― 0.8 ― pF Switching Characteristics (Ta = 25°C, VCC = 5V) Characteristic Symbol Test Cir/G2d cuit Test Condition Min. Typ. Max. Unit Propagation delay time (H→ L) tpHL 1 IF = 0→ 16mA VCC = 5V, RL = 1.9kΩ ― ― 0.8 µs Propagation delay time (L→ H) tpLH 1 IF = 16→ 0mA VCC = 5V, RL = 1.9kΩ ― ― 0.8 µs Common mode transient imunity at high output level C MH 2 IF = 0mA, VCM = 400Vp/G2dp RL = 4.1kΩ 5000 10000 ― V / µs Common mode transient imunity at low output level C ML 2 IF = 16mA, VCM = 400Vp/G2dp RL = 4.1kΩ /G2d5000 /G2d10000 ― V / µs
(Note 5) Device considered a two /G2dterminal device: Pins 1 and 3 shorted together, and pins 4, 5 and 6 shorted together. (Note 6) Maximum electrostatic discharge voltage for any pins: 100V(C=200pF, R=0) Test Circuit 1: Switching Time Test Circuit Test Circuit =2: Common Mode Transient Immunity Test Circuit s)(rt 320(V) LCM ,s)(rt 320(V) HCM /G6d/G3d/G6d/G3d VO IF 1.5V VOL tpLHtpHL 1.5V PW = 100µs DUTY RATIO = 1/10 IF MONITOR PULSE INPUT OUTPUT MONITOR VO 100Ω VCC = 5V 3 4 6 RL IF VO VCM 400V 90% 0.8V VOL tr tf 10% VO (IF = 16mA) (IF = 0mA) IF PULSE GEN ZO = 50Ω VCM OUTPUT MONITOR VO VCC = 5V 3 4 6 RL
ΔVF / Δta – IF Forward current I F (mA) Forward voltage temperature coefficient ΔVF / Δta (mV / °C ) -4.0 0.1 -3.2 -2.4 -1.6 0.3 0.5 1 3 5 10 30 -3.6 -2.8 -2.0 -1.2 I OH(1) – Ta Ambient temperature Ta (°C) High level output currency IOH(1) ( n A ) 100 0 40 80 0.5 300 20 60 100 120 VF = 1V VCC = 5.5V VO = 5.5V IO – IF Forward current I F (mA) Output current I O (mA) 0.01 0.3 0.03 50 30 10 5 3 1 0.5 0.3 0.1 0.1 VCC = 5V VO = 0.4V Ta = 25°C 0.05 0.5 I O / IF – Ta Ambient temperature Ta (°C) Nor,alized I O / IF (IO / IF) 0 20 40 60 80 -20 100 0.4 0.6 0.8 1.0 1.2 Normalized to VCC = 4.5V VO = 0.4V Ta = 25°C IF = 16mA 8mA IF – VF Forward voltage V F (V) Forward current I F (mA) 100 1.0 0.1 0.01 Ta = 70°C 25°C 0°C IO / IF – I F Forward current I F (mA) Current transfer ratio IO / IF (%) 50 30 10 5 3 1 0.5 0.3 100 0.1 VCC = 5V VO = 0.4V Ta = 25°C - 25°C25°C 100°C
t pHL, tpLH – RL Load resistance R L ( k Ω) Propagation delay time tpHL, tpLH (µs) tpLH tpHL 0.3 1 5 10 50 100 0.1 30 3 0.5 IF = 16mA VCC = 5V Ta = 25°C IO – VO Output voltage V O (V) Output current I O (mA) 5 4 3 2 1 0 VCC = 5V Ta = 25°C 15mA 25mA 20mA 10mA IF = 5mA t pHL, tpLH – Ta Ambient temperature Ta (°C) Propagation delay time t pHL, tpLH (µs) 0.3 0 40 80 100 0.1 60 20 0.5 IF = 16mA VCC = 5V RL = 1.9kΩ tpLH tpHL V O L – Ta Ambient temperature Ta (°C) Low level output voltage V OL (V) - 25 25 50 75 0.2 0.4 0.3 0.1 100 0 VCC = 5V IO = 2.4mA IF = 16mA 1.1mA 8mA
/Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. /Gb7/G20The products described in this document are subject to the foreign exchange and foreign trade laws. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EBCRESTRICTIONS ON PRODUCT USE