TLN227 TOSHIBA | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

TLN227(F) 2004-01-06 1 TOSHIBA Infrared LED GaA ℓAs Infrared Emitter TLN227(F) Lead Free Product For Space−Optical−Transmission

  • High radiant power: Po = 18mW (typ.) at IF = 50mA
  • Wide half−angle value: = θ1 / 2 ± 21° (typ.)
  • High−speed response: tr, tf = 30ns (typ.)
  • Light source for remote control
  • Designed for transmission of wireless AVsignals purpose.
  • Designed for high−speed data transmission Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current I F 100 mA Pulse forward current I FP 1000 (Note 1) mA Power dissipation P D 220 mW Reverse voltage V R 4 V Operating temperature T opr −25~85 °C Storage temperature T stg −30~100 °C Soldering temperature (5s) T sol 260 °C (Note 1): Frequency = 100kHz, duty = 1% Optical And Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage V F I F = 100mA ― 1.8 2.2 V Reverse current I R V R = 4V ― ― 60 µA Radiant power P O I F = 50mA 14 18 ― mW Radiant intensity I E I F = 50mA ― 100 ― mW / sr Rise time, fall time t r, tf I FP = 100mA, PW = 100ns ― 30 ― ns Cut−off frequency (Note 2) f c I F = 50mADC + 5mAp−p 10 15 ― MHz Capacitance C T V R = 0, f = 1MHz ― 110 ― pF Peak emission wavelength λP I F = 50mA 830 870 900 nm Spectral line half width ∆λ I F = 50mA ― 50 ― nm Half value angle θ 2

1 IF = 50mA ― ±5 ― °

(Note 2): Frequency when modulation light power decreases by 3dB from 1 MHz. Unit: mm TOSHIBA 4-6J1 Pin Connection 1. Anode 2. Cathode12

TLN227(F) 2004-01-06 2 Precautions Please be careful of the followings. 1. Soldering must be performed under the lead stopper. 2. When forming the leads, bend each lead under the stopper without leaving forming stress to the body of the device. Soldering must be performed after the leads have been formed. 3. Radiant power falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in radiant power over time.

TLN227(F) 2004-01-06 3 IF – Ta Ambient temperature Ta (°C) Allowable forward current I F (mA) 20 40 60 80 140 120 100 100 120 V F – Ta (typ.) Ambient temperature Ta (°C) Forward voltage V F (V) 25 0 25 50 125 1.4 1.3 1.2 1.9 1.1 −50 1.5 75 100 1.7 1.6 1.8 IF = 80mA IF = 50mA IF = 20mA IF = 5mA I FP – VFP (typ.) Pulse forward voltage V FP (V) Pulse Forward Current I FP ( m A ) 1000 100 2 3 4 5 6 500 300 Pulse width ≦ 100µs Repetitive frequency = 100Hz Ta = 2 5 ° C Relative PO – IFP (typ.) Pulse forward current I FP (mA ) Relative radiant power 1.2 0.8 0.6 0.4 0.2 200 4000 600 1000 800 1.0 Pulse width = 1ms Duty = 10% Pulse width P W (s) IFP – PW Allowable pulse forward current I FP (mA) 10µ 30µ 10m 300 100 500 1000 100µ 300µ 1m 3m 20000 3000 5000 10000 Ta = 25°C f = 100Hz 500 200 10k I F – VF (typ.) Forward voltage V F ( V ) Forward current I F (mA) 1.2 1.4 1.6 2 0.01 100 1.8 0.1 10 75°C 50°C -25°C 0°C 25°C 85°C

TLN227(F) 2004-01-06 4 Frequency f (MHz) Frequency Characteristic (typ.) Response (dB) 0.3 1 3 10 100 0.1 30 −10 0.5 5 50 Distance d (m) TPS703(F) short circuit current I SC (µA) Distance Characteristics 0.1 1 10 0.1 0.01 1000 100 Pop = 23mW at IFP = 180mA, f = 100kHz, duty = 50% Po = 14mW at IF = 50mA Wavelength Characteristic (typ.) Wavelength λ ( n m ) Relative radiant power 1.0 800 0.8 0.6 0.4 0.2 840 880 920 960 1000 IF = 50mA Radiation Pattern (typ.) Ta = 25°C Relative radiant power 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 10° 20° 30° 40° 50° 60° 70° 80° 90° Relative PO – Ta (typ.) Ambient temperature Ta (°C) Relative radiant power 0.1 −50 −25 0 25 75 50 IF = 50mA 100 125

TLN227(F) 2004-01-06 5

  • The information contained herein is subject to change without notice.
  • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
  • TOSHIBA is continually working to im prove the quality and reliability of its products. Neve rtheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
  • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunctio n or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.
  • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
  • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. 030619EACRESTRICTIONS ON PRODUCT USE