TLN108

TLN108_07 TOSHIBA | Alldatasheet

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TLN108(F) 2007-10-01 1 TOSHIBA Infrared LED GaAs Infrared Emitter TLN108(F) Lead(Pb)-Free Opto−Electronic Switches Tape And Card Readers Equipment Using Infrared Transmission

• TO−18 metal package
• High radiant intensity: IE = 20 mW/sr (typ.)
• Excellent radiant−intensity linearity. Modulation by pulse operation and high frequency is possible.
• Highly reliable due to hermetic seal Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current IF 100 mA Forward current derating (Ta > 25°C) ΔIF / °C −1 mA / °C Pulse forward current (Note 1) I FP 1 A Reverse voltage VR 5 V Operating temperature range Topr −40~125 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width ≦100μs, repetitive frequency = 100 Hz Pin Connection 1. Anode 2. Cathode (case) 1 2 Markings Unit: mm TOSHIBA 4 −5Q2 Weight: 0.33 g (typ.) ･ Month of manufacture (January to December denoted by letters A to L respectively) Letter color：Red Product No. (TL omitted) Monthly lot number Year of manufacture (last digit of year of manufacture) N108

TLN108(F) 2007-10-01 2 Optical And Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF I F = 50 mA ― 1.3 1.4 V Pulse forward voltage VFP I FP = 1 A ― 2.4 ― V Reverse current IR V R = 5 V ― ― 10 μA Radiant intensity IE I F = 50 mA 10 20 ― mW / sr Radiant power PO I F = 50 mA ― 3 ― mW Capacitance C T V R = 0, f = 1 MHz ― 30 ― pF Peak emission wavelength λP I F = 50 mA ― 940 ― nm Spectral line half width Δλ I F = 50 mA ― 50 ― nm Half value angle θ

1 I F = 50 mA ― ±8 ― °

Please be careful of the followings. 1. Soldering temperature: 260°C max Soldering time: 5s max (Soldering must be performed 1.5m from the bottom of the package.) 2. When forming the leads, bend each lead under the 2mm from the body of the device. Soldering must be performed after the leads have been formed. 3. Radiant intensity falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in radiant power over time. The ratio of fluctuation in radiation intensity to fluctuation in optical output is 1 : 1. (0) P (t) P (0) I (t) I O O E E =

TLN108(F) 2007-10-01 3 Wavelength Characteristic (typ.) Wavelength λ (nm) Relative intensity 1.0 900 0.8 0.6 0.4 0.2 920 940 960 980 1000 1020 IF = 50mA Ta = 25°C Pulse forward voltage VFP (V) Pulse forward current I FP (mA) I FP – VFP (typ.) 1.0 2.0 2.2 1000 300 500 100 Pulse width ≦ 100μs Repetitive frequency = 100Hz Ta = 25°C Forward current IF (mA) Radiant intensity I E (mW / sr) I E – IF (typ.) 3 10 30 100 10001 300 0.1 300 100 0.5 0.3 Pulse width ≦ 100μs Repetitive frequency = 100Hz Ta = 25°C Pulse DC Ambient temperature Ta (°C) IF – Ta Allowable forward current I F (mA) 20 40 60 80 140 120 100 100 120 160 I F – VF (typ.) Forward voltage V F ( V ) Forward current I F ( m A ) 1.0 1.1 1.2 1.5 100 0.9 1.3 1.4 Ta = 100°C -30

TLN108(F) 2007-10-01 4 R e l a t i v e I E – T a ( t y p . ) Ambient temperature Ta (°C) Relative radiant intensity 0.1 -40 0.3 0.5 0 40 80 120 140 -20 20 60 100 R a d i a t i o n P a t t e r n ( t y p . ) (Ta = 25°C) Relative intensity 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 10° 20° 30° 40° 50° 60° 70° 80° 90° Pulse width P W (s) IFP – PW Allowable pulse forward current IFP (mA) Ta = 25°C 10μ 30μ 10m 300 100 500 1000 100μ 300 μ 1m 3m 3000 f = 100Hz 200Hz1kHz 5kHz 2kHz 10kHz 500Hz Distance d ( ｍｍ) Collector current I C ( m A ) Coupling Characteristics With TPS601A(F) 3 10 100 0.1 30 50 100 0.3 0.5 Ta = 25°C TPS601A(F)･･･IL = 226μA at VCE = 3V E = 0 . 1 m W / c m2 IE = 42mW / sr 11.7 d

TLN108(F) 2007-10-01 5 RESTRICTIONS ON PRODUCT USE 20070701-EN

• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
• The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dus t or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically.
• Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.