TLN102 TOSHIBA | Alldatasheet

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TOSHIBA INFRARED LED GaAs INFRARED EMITTER INFRARED LED FOR PHOTOSENSORS. Unit : mm 5.8max OPTO-ELECTRONIC SWITCHES garthts leerennane] EQUIPMENT USING INFRARED TRANSMISSION Pa | al con a) | 3 “| iy | |: @ Wide half value angle : 6} = +31° (typ.) | | | - E e Excellent radiant-intensity linearilty and modulation by pulse Se 3 operation and high frequency is possible. iy —_— 2.54403 e@ Hyghly reliable due to hermetic seal. an\\ MAXIMUM RATINGS (Ta = 25°C) bo cnanacreniste [Simon RYLEY Forward Current Derating Alp/°C -1 mA/°C (Ta > 25°C) TOSHIBA _4-5X1 Pulse Forward Current Rane Weight : 0.29 g (typ.) ote Reverse Voltage Operating Temperature —40~125 PIN CONNECTION ye rage Temperature ‘stg 1 2 (Note) : Pulse width = 100 ys, repetitive frequency = 100 Hz 1, Anode 2. Cathode (case) OPTICAL AND ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC —_| SYMBOL TEST CONDITION Forward Voltage Tp = 50 mA |} — [13] 14] Vv | Pulse Forward Voltage Tpp= 1A [= peat —fv_ VR=5V b= p= | pa Radiant Intensity Ip =50mA ef # | — fmiwar Radiant Power [Po | 1F= 50mA L— [ae | — | mw | Vg=0, f= 1 Mie Se Peak Emission Wavelength Tp = 50mA P= poo =a Spectral Line Half Width p= 50mA Ss Half Value Angle Tp =50mA P= a t= 1 2002-01-25

Product No. (TL omitted) Monthly lot number TA tea N10? Fd (11) Month of manufacture er anuary to December denoted by letters A to L respectively) Year of manufacture Letter color : Red (last digit of year of manufacture) PRECAUTIONS Please be careful of the followings. 1. Soldering temperature : 260°C max Soldering time : 5s max (Soldering must be performed 1.5m from the bottom of the package.) 2. When forming the leads, bend each lead under the 2mm from the body of the device. Soldering must be performed after the leads have been formed. 3. Radiant intensity falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in radiant power over time. The ratio of fluctuation in radiation intensity to fluctuation in optical output is 1:1. In(t) _ Pott) Ig (0) ~ Po (0) 2 2002-01-25

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RADIATION PATTERN (typ.) 10 RELATIVE Ig — Ta (typ.) 0 ae 2 EEE EEE eee JPEN . eg CESERERERREREREREE bet. 2 UTA ALK SATE OR er a BSS SS SRE EES AT ESET Bs EEEESEEEEPBREEEE LT REBSXO Cee eee eee SC sol PERRIER Ove 3 oa = PPHHEAGSNIBee SECEEEE eer w ae al ELLE] RELATIVE INTENSITY -40 -20 0 20 40 60 80 100 120 140 AMBIENT TEMPERATURE Ta (°C) Ipp — Pw Eg PCT 2 | Scot ll TUM TT = |

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RESTRICTIONS ON PRODUCT USE ooo7o7eac @ TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. @ The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. @ Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 5 2002-01-25