TLGE3407 LUGUANG | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 5

Technical content

Features

 RDS(ON) ≤ 52mΩ@ VGS = -10V  RDS(ON) ≤ 87mΩ@ VGS = -4.5V  High-speed Switching  Drive Circuits Can be Simple  Parallel Use is Easy  Halogen free  Qualified to AEC-Q101 standards for high reliability Typical Applications  Power Management in Note Book  Switching Application  Battery Powered System  Load Switch Mechanical Data  Case: SOT-23, SOT-23-3L  Molding Compound, UL Flammability Classification Rating 94V-0  Terminals: Matte Tin Plated Leads, Solderable Per MIL-STD-202, Method 208 TLGE3407 TLGE3407-3L SOT-23 SOT-23-3L

Ordering Information

Part Number Package Shipping Quantity Marking Code TLGE3407 SOT-23 3000 pcs / Tape & Reel 3407 TLGE3407-3L SOT-23-3L 3000 pcs / Tape & Reel 3407 Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain-Source Voltage VDSS -30 V Gate -Source Voltage VGSS ±20 V Continuous Drain Current (TA = 25°C) *1 ID -4.3 A Continuous Drain Current (TA = 70°C) *1 -3.5 A Single Pulse Avalanche Energy *4 EAS 12 mJ Power Dissipation (TA = 25°C) *1 PD 1.25 W Power Dissipation (TA = 25°C) *2 0.35 W Operating Junction Temperature Range TJ -55 ~ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C http://www.lgesemi.com Revision:20240730-P 1 mail:lge@lgesemi.com

Parameter Symbol Value Unit Thermal Resistance Junction to Ambient Air *1 SOT-23, SOT-23-3L RθJA 100 °C/W Thermal Resistance Junction to Ambient Air *2 SOT-23, SOT-23-3L 357 °C/W Thermal Resistance Junction to Lead *2 SOT-23, SOT-23-3L RθJL 214 °C/W Thermal Resistance Junction to Case *2 SOT-23, SOT-23-3L RθJC 180 °C/W Electrical Characteristics (@ TA = 25°C unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics VDSS Drain-Source Breakdown Voltage VGS = 0V, ID = -250μA -30 - - V IDSS Zero Gate Voltage Drain Current VDS = -24V, VGS = 0V - - -1 μA IGSS Gate-Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 nA On Characteristics RDS(ON) Drain-Source On-resistance *3 VGS = -10V,ID = -4.1A - 40 52 mΩ VGS = -4.5V,ID = -3A - 59 87 mΩ VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250μA -1 -1.5 -2.1 V RG Gate Resistance VGS = 0V, f = 1MHz - 12 - Ω Dynamic Characteristics gFS Forward Transconductance VDS = -5V, ID = -4A - 7 - S CISS Input Capacitance VGS = 0V VDS = -15V f = 1.0MHz - 793 - pF COSS Output Capacitance - 78 - CRSS Reverse Transfer Capacitance - 61 - Switching Characteristics td(ON) Turn-on Delay Time *5 VDD =-15V, VGS = -10V RG = 2.5Ω, RL = 15Ω ID = -1A - 5 - ns tr Turn-on Rise Time *5 - 6 - td(OFF) Turn-Off Delay Time *5 - 28 - tf Turn-Off Fall Time *5 - 7 - QG Total Gate-Charge VDD = -20V VGS = -4.5V ID = -3A - 8 - nC QGS Gate to Source Charge - 2.6 - QGD Gate to Drain (Miller) Charge - 2.6 - Source-Drain Diode Characteristics VSD Diode Forward Voltage *3 ISD = -1A, VGS = 0V, TJ = 25°C - -0.8 -1.0 V trr Reverse Recovery Time ISD = -3A, VGS = 0V dI/dt = 100A/μs - 125 - ns Qrr Reverse Recovery Charge - 110 - nC Notes: 1. The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper 2. T he data tested by surface mounted on a minimum recommended FR-4 board 3. The data tested by pulsed, pulse width ≤ 300μs, duty cycle ≤ 2% 4. The E AS data shows Max. rating. The test condition is VDD = -15V, VGS = -10V, L = 0.1mH 5. Guaranteed by design, not subject to production TLGE3407 TLGE3407-3L P-Channel Enhancement Mode MOSFET http://www.lgesemi.com Revision:20240730-P2 mail:lge@lgesemi.com

Ratings and Characteristic Curves (@ TA = 25°C unless otherwise specified) Fig 1 Typical Output Characteristics Fig 3 On-Resistance vs. Gate-Source Voltage Fig 5 Normalized On-Resistance vs. Junction Temperature Fig 2 On-Res istance vs. Drain Current a nd Gate V oltage Fi g 4 Bod y-Diod e Characteristics Fig 6 T ransfer Characteristics VGS = -2. VGS = -3V VGS = -3. 5VVGS = -4V VGS = -4. 5V ~ -10V 0 1 2 3 4 5 -ID(A) -VDS( -55℃ 25℃ 150℃ 0 0.5 1 1.5 2 2.5 3 3.5 4 -ID(A) -VGS( VDS = -5V VGS = -4. VGS = -10V 100 0 4 8 12 16 RDS(ON)(mΩ) -ID( -55℃ 150℃ 25℃ 100 150 200 0 1 2 3 4 5 6 7 8 9 10 RDS(ON)(mΩ) -VGS( ID = -4. VGS = -10V; ID = -4. VGS = -4. 5V; ID = -3A 0.7 0.8 0.9 1.1 1.2 1.3 1.4 1.5 -75 -50 -25 0 25 50 75 100 125 150 RDS(on), Normalized Static Drain-Source OnState Resistance TJ(℃) 25℃ -55℃ 150℃ 0.001 0.01 0.1 100 -IS(A) -VSD( TLGE3407 TLGE3407-3L P-Channel Enhancement Mode MOSFET http://www.lgesemi.com Revision:20240730-P3 mail:lge@lgesemi.com

Fig 7 Capacitance Characteristics Fig 9 Normalized Breakdown Voltage vs. Junction Temperature Fig 11 Safe Operation Area Fig 8 Gate-Charge Characteristics Fig 10 Normalized VGS(th) vs. Junction Temperature Fig 12 Normalized Maximum transient thermal impedance ID = -250uA 0.6 0.7 0.8 0.9 1.1 1.2 -75 -50 -25 0 25 50 75 100 125 150 VGS(th), Normalized Threshold Voltage TJ(℃) ID = -250uA 0.96 0.98 1.02 1.04 1.06 -75 -50 -25 0 25 50 75 100 125 150 BVDSS, Normalized Drain-Source Breakdown Voltage TJ(℃) Ciss Coss Crss 100 1000 0 5 10 15 20 25 30 C(pF) -VDS(V) f = 1 MHz 0.5 1.5 2.5 3.5 4.5 0 1 2 3 4 5 6 7 8 -VGS(V) Qg(nC) VDS = -20V；ID = -3A δ = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.000001 0.0001 0.01 1 100 Normalized Zth(j-a)(K/W) tP(s) tp= 10 us 500 us 100 us 1 ms 10 ms 100 ms 0.01 0.1 100 0.01 0.1 1 10 100 - ID(A) -VDS(V) TA = 25℃ δ = tp/T= 0.01 TLGE3407 TLGE3407 -3L P-Channel Enhancement Mode MOSFET http://www.lgesemi.com Revision:20240730-P4 mail:lge@lgesemi.com

Package Outline Dimensions (unit: mm) SOT-23 SOT-23 Dim Min Max A 2.70 3.10 B 1.10 1.50 C 0.90 1.10 D 0.30 0.50 E 0.35 0.48 G 1.80 2.00 H 0.02 0.10 J 0.05 0.15 K 2.20 2.60 S OT-23-3L S OT-23-3L D im M in M ax A 2. 80 3. B 1. 50 1. C 1. 00 1. D 0. 35 0. E 0. 35 0. G 1. 80 2. H 0. 02 0. J 0.10 0. K 2. 60 3. A ll Dimensions in mm A B C D E J H K G Mounting Pad Layout (unit: mm) SOT-23 0.90 0.80 2.00 0.95 0.95 S OT-23-3L TLGE3407 TLGE3407-3L P-Channel Enhancement Mode MOSFET http://www.lgesemi.com Revision:20240730-P5 mail:lge@lgesemi.com