TLD26AH TSC | Alldatasheet
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Technical content
TLD26AH – TLD82AH Taiwan Semiconductor
1 Version: C2408
26V - 82V Surface Mount Transient Voltage Suppressor
FEATURES
- AEC-Q101 qualified
- Low leakage current: 1μA at 25 °C
- TJ = 175°C capability suitable for high reliability and automotive requirement
- Meets ISO7637-2 and ISO16750-2 surge specifications (varied by test conditions)
- Meets IEC 61000-4-2 (Level: 4) / ISO 10605 (Level: L4)
- Moisture sensitivity level: level 1, per J-STD-020
- RoHS Compliant
- Halogen-free
APPLICATIONS
- Transient surge protection
- Automotive load dump surge protection MECHANICAL DATA
- Case: TO-263AB (D² PAK)
- Molding compound meets UL 94V-0 flammability rating.
- Terminal: Matte tin plated leads, solderable per J-STD-002
- Meet JESD 201 class 2 whisker test.
- Polarity: As circuit diagram
- Weight: 1.44g (approximately) KEY PARAMETERS PARAMETER VALUE UNIT VWM 22 - 70 V VBR 26 - 82 V TJ MAX 175 °C Package TO-263AB (D² PAK) Configuration Single die TO-263AB (D² PAK) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Junction temperature TJ -55 to +175 °C Storage temperature TSTG -55 to +175 °C THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-case thermal resistance RӨJC 0.33 °C/W Thermal Performance Note: With ideal heatsink.
TLD26AH – TLD82AH Taiwan Semiconductor
2 Version: C2408
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) Part number Device marking Breakdown voltage VBR at IT (V) (Note 1) Test current IT (mA) Working stand-off voltage VWM (V) Maximum blocking leakage current IR at VWM (µA) (Note 1) Maximum VC at IPPM tp =8/20 (μs) Maximum VC at IPPM tp =10/1000 (μs) Maximum temp. coefficient of VBR αT (%/°C) (Note 2) Min Typ Max 25°C 175°C V A V A TLD82AH TLD82AH 77.8 82 86.0 1 70 1 100 135.0 550 113 35 0.105 Notes: 1. Pulse test with PW = 30ms 2. To calculate VBR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + T x (TJ - 25))
ORDERING INFORMATION
ORDERING CODE(1) PACKAGE PACKING TLDxAH TO-263AB (D² PAK) 800 / Tape & Reel Notes: 1. "x" defines voltage from 26V (TLD26AH) to 82V (TLD82AH)
TLD26AH – TLD82AH Taiwan Semiconductor
3 Version: C2408
(TA = 25°C unless otherwise noted) Fig.1 Peak Pulse Power Derating Curve Fig.2 Non-Repetitive Peak Pulse Power vs. Pulse Time Fig.3 Typical Reverse Characteristics Fig.4 Typical Junction Capacitance Fig.5 Typical Transient Thermal Impedance 100 120 0 25 50 75 100 125 150 175 200 100 1000 10000 100000 1000000 1 10 100 1000 10000 TLD26AH 0.001 0.01 0.1 100 25 50 75 100 125 150 175 100 1000 10000 20 30 40 50 60 70 80 90 f=1.0MHz Vsig=50mVp-p Measured at zero bias Measured at VWM 0.1 0.2 0.3 0.4 PEAK PULSE POWER (W) PERCENT OF POWER PULSE POWER (%) PULSE TIME (μs) AMBIENT TEMPERATURE (°C) PULSE DURATION (s) CAPACITANCE (pF) REVERSE BREAKDOWN VOLTAGE (V) INSTANTANEOUS REVERSE CURRENT (μA) TEMPERATURE (°C) TRANSIENT THERMAL IMPEDANCE (°C/W)
TLD26AH – TLD82AH Taiwan Semiconductor
4 Version: C2408
10/1000µs Waveform as defined by R.E.A td tr = 10us 100 30ns 60ns tr = 0.7ns to 1.0ns CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 10/1000μs pulse waveform Fig.7 ESD pulse waveform PERCENT OF IPP (%) TIME (mS) PERCENT OF IPP (%) TIME
TLD26AH – TLD82AH Taiwan Semiconductor
5 Version: C2408
PACKAGE OUTLINE DIMENSIONS TO-263AB (D²PAK) GYWWF P/N P/N G YWW F = Device marking = Green compound = Date code = Factory code
TLD26AH – TLD82AH Taiwan Semiconductor
6 Version: C2408
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