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TLC1078, TLC1078Y, TLC1079, TLC1079Y LinCMOS µPOWER PRECISION OPERATIONAL AMPLIFIERS SLOS179A – FEBRUARY 1997 – REVISED MARCH 2001 1POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 /C0068 Power Dissipation as Low as 10 µW Typ Per Amplifier /C0068 Operates on a Single Silver-Oxide Watch Battery, V DD = 1.4 V Min /C0068 VIO . . . 450 µV/850 µV Max in DIP and Small-Outline Package (TLC1078/79) /C0068 Input Offset Voltage Drift. . . 0.1 µV/Month Typ, Including the First 30 Days /C0068 High-impedance LinCMOS  Inputs IIB = 0.6 pA Typ /C0068 High Open-Loop Gain. . . 800000 Typ /C0068 Output Drive Capability > 20 mA /C0068 Slew Rate. . . 47 V/ms Typ /C0068 Common-Mode Input Voltage Range Extends Below the Negative Rail /C0068 Output Voltage Range Includes Negative Rail /C0068 On-Chip ESD-Protection Circuitry /C0068 Small-Outline Package Option Also Available in Tape and Reel

description

The TLC107x operational amplifiers offer ultra- low offset voltage, high gain, 110-kHz bandwidth, 47-V/ms slew rate, and just 150-µW power dissipation per amplifier. With a supply voltage of 1.4 V, common-mode input to the negative rail, and output swing to the negative rail, the TLC107xC is an ideal solution for low-voltage battery-operated systems. The 20-mA output drive capability means that the TLC107x can easily drive small resistive and large capacitive loads when needed, while maintaining ultra-low standby power dissipation. Since this device is functionally compatible as well as pin compatible with the TLC27L2/4 and TLC27L7/9, the TLC107x easily upgrades existing designs that can benefit from its improved performance. Copyright  2001, Texas Instruments IncorporatedPRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. LinCMOS is a trademark of Texas Instruments Incorporated. 1OUT 1IN – 1IN+ GND VDD 2OUT 2IN – 2IN+ 3212 0 1 9 91 0 1 1 1 2 1 3 NC 2OUT NC 2IN – NC NC 1IN – NC 1IN+ NC NC 1OUT NC 2IN + NC NC NC GND NC NC – No internal connection DDV TLC1078 D, JG, OR P PACKAGE (TOP VIEW) TLC1078 FK PACKAGE (TOP VIEW) 3212 0 1 9 91 0 1 1 1 2 1 3 4IN+ NC GND NC 3IN+ 1IN+ NC V DD NC 2IN+ 1IN – 1OUT NC 3OUT 3IN – 4IN – 2IN – 2OUT NC 4OUT 1OUT 1IN – 1IN+ VDD 2IN+ 2IN – 2OUT 4OUT 4IN – 4IN+ GND 3IN+ 3IN – 3OUT TLC1079 D, J, OR N PACKAGE (TOP VIEW) TLC1079 FK PACKAGE (TOP VIEW)

TLC1078, TLC1078Y, TLC1079, TLC1079Y LinCMOS µPOWER PRECISION OPERATIONAL AMPLIFIERS SLOS179A – FEBRUARY 1997 – REVISED MARCH 2001

2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

description (continued) The TLC107x incorporates internal ESD-protection circuits that will prevent functional failures at voltages up to 2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised when handling these devices as exposure to ESD may result in degradation of the device parametric performance. The TLC107x design also inhibits latch-up of the device inputs and outputs even with surge currents as large 100 mA. The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to 125°C. The wide range of packaging options includes small-outline and chip-carrier versions for high-density system applications. AVAILABLE OPTIONS PACKAGED DEVICES CHIP TA SMALL OUTLINE † CHIP CARRIER CERAMIC DIP CERAMIC DIP PLASTIC DIP PLASTIC DIP FORM ‡ (Y)(D) (FK) (J) (JG) (N) (P) (Y) 0°C to 70°C TLC1078CD TLC1079CD — — — TLC1079CN TLC1078CP TLC1078Y TLC1079Y –40°C to 85°C TLC1078ID TLC1079ID — — — TLC1079IN TLC1078IP — –55°C to 125°C TLC1078MD TLC1079MD TLC1078MFK TLC1079MFK TLC1079MJ TLC1078MJG TLC1079MN TLC1078MP — † The D package is available taped and reeled. Add the suffix R to the device type (e.g., TLC1078CDR). ‡ Chip forms are tested 25°C only. symbol (each amplifier) OUT IN– IN+

TLC1078, TLC1078Y, TLC1079, TLC1079Y LinCMOS µPOWER PRECISION OPERATIONAL AMPLIFIERS SLOS179A – FEBRUARY 1997 – REVISED MARCH 2001 3POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TLC1087Y chip information This chip, when properly assembled, displays characteristics similar to the TLC1078C. Thermal compression or ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips can be mounted with conductive epoxy or a gold-silicon preform. BONDING PAD ASSIGNMENTS CHIP THICKNESS: 15 MILS TYPICAL BONDING PADS: 4 × 4 MILS MINIMUM TJmax = 150°C TOLERANCES ARE ± 10%. ALL DIMENSIONS ARE IN MILS. 1OUT 1IN+ 1IN– VDD VDD –/GND (8)(3) (2) (4) 2OUT 2IN+ 2IN– (5) (6) (1) (5)(4) (3) (2) (6) (7)(8) BONDING PAD ASSIGNMENTS

TLC1078, TLC1078Y, TLC1079, TLC1079Y LinCMOS µPOWER PRECISION OPERATIONAL AMPLIFIERS SLOS179A – FEBRUARY 1997 – REVISED MARCH 2001

4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

This chip, when properly assembled, display characteristics similar to the TLC1079C. Thermal compression or ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips can be mounted with conductive epoxy or a gold-silicon preform. BONDING PAD ASSIGNMENTS 1OUT 1IN+ 1IN– VDD (4) (6) (3) (2) (5) (1) 2IN+ 2IN– 2OUT (11) VDD –/GND 3OUT 3IN+ 3IN– (13) (10) (9) (12) (8) + (14) 4OUT 4IN+ 4IN– (7) CHIP THICKNESS: 15 MILS TYPICAL BONDING PADS: 4 × 4 MILS MINIMUM TJmax = 150°C TOLERANCES ARE ± 10%. ALL DIMENSIONS ARE IN MILS. PIN (11) IS INTERNALLY CONNECTED TO BACKSIDE OF CHIP. 130 (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) (12) (13) (14)

TLC1078, TLC1078Y, TLC1079, TLC1079Y LinCMOS µPOWER PRECISION OPERATIONAL AMPLIFIERS SLOS179A – FEBRUARY 1997 – REVISED MARCH 2001 5POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 equivalent schematic (each amplifier) R2 D1 R3 Q4Q2 IN– IN+ Q3 Q6 VDD GND Q10 Q13 OUT Q11 Q12 ACTUAL DEVICE COMPONENT COUNT COMPONENT TLC1078 TLC1079 Transistors 38 76 Resistors 16 32 Diodes 12 24 Capacitors 2 4

TLC1078, TLC1078Y, TLC1079, TLC1079Y LinCMOS µPOWER PRECISION OPERATIONAL AMPLIFIERS SLOS179A – FEBRUARY 1997 – REVISED MARCH 2001

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absolute maximum ratings over operating free-air temperature range (unless otherwise noted)† † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. All voltage values, except differential voltages, are with respect to network ground. 2. Differential voltages are at IN+ with respect to IN–. 3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum dissipation ratings are not exceeded. DISSIPATION RATING TABLE PACKAGE TA ≤ 25°C POWER RATING DERATING FACTOR ABOVE T A = 25°C TA = 70°C POWER RATING TA = 85°C POWER RATING TA = 125°C POWER RATING D –8 725 mW 5.8 mW/°C 464 mW 377 mW 145 mW D –14 950 mW 7.6 mW/ °C 608 mW 494 mW 190 mW FK 1375 mW 11.0 mW/ °C 880 mW 715 mW 275 mW J 1375 mW 11.0 mW/ °C 880 mW 715 mW 275 mW JG 1050 mW 8.4 mW/ °C 672 mW 546 mW 210 mW N 1150 mW 9.2 mW/ °C 736 mW 598 mW 230 mW P 1000 mW 8.0 mW/°C 640 mW 520 mW 200 mW recommended operating conditions C SUFFIX I SUFFIX M SUFFIX UNIT MIN MAX MIN MAX MIN MAX UNIT Supply voltage, VDD 1.4 16 3 16 4 16 V Common mode in put voltage VIC VDD = 5 V –0.2 4 –0.2 4 0 4 VCommon -mode input voltage, VIC VDD = 10 V –0.2 9 –0.2 9 0 9 V Operating free-air temperature, TA 0 70 –40 85 –55 125 °C

TLC1078, TLC1078Y, TLC1079, TLC1079Y LinCMOS µPOWER PRECISION OPERATIONAL AMPLIFIERS SLOS179A – FEBRUARY 1997 – REVISED MARCH 2001 7POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 electrical characteristics at specified free-air temperature TEST † TLC1078C PARAMETER TEST CONDITIONS TA † VDD = 5 V VDD = 10 V UNITCONDITIONS A MIN TYP MAX MIN TYP MAX VIO Input offset voltage VO = 1.4 V, 25°C 160 450 180 600 µVVIO Input offset voltage VO = 1.4 V, R S = 50 Ω , Full range 800 950 µV α VIO Temperature coefficient of input offset voltage VIC = 0, R I = 1 MΩ 25°C to 70°C 1.1 1 µV/°C IIO Input offset current (see Note 4) 25°C 0.1 60 0.1 60 pAIIO Input offset current (see Note 4) VO = VDD / 2, 70°C 7 300 7 300 pA IIB Input bias current (see Note 4) OD D , VIC = VDD / 2 25°C 0.6 60 0.7 60 pAIIB Input bias current (see Note 4) 70°C 40 600 50 600 pA VICR Common-mode input voltage 25°C –0.2 to 4 –0.3 to 4.2 –0.2 to 9 –0.3 to 9.2 V VICR g range (see Note 5) Full range –0.2 to 3.5 –0.2 to 8.5 V V 100 V 25°C 3.2 4.1 8.2 8.9 VOH High-level output voltage VID = 100 mV, R L=1M Ω 0°C 3.2 4.1 8.2 8.9 VR L= 1 M Ω 70°C 3.2 4.2 8.2 8.9 V 100 V 25°C 0 25 0 25 VOL Low-level output voltage VID = –100 mV, IOL =0 0°C 0 25 0 25 mVIOL = 0 70°C 0 25 0 25 L i l diff ti l lt R1 M Ω 25°C 250 525 500 850 AVD Large-signal differential voltage am plification R L= 1 MΩ , See Note 6 0°C 250 680 500 1010 V/mVam lification See Note 6 70°C 200 380 350 660 25°C 70 95 75 97 CMRR Common-mode rejection ratio V IC = VICRmin 0°C 70 95 75 97 dB 70°C 70 95 75 97 S l lt j ti ti 25°C 75 98 75 98 kSVR Supply-voltage rejection ratio (∆VDD /∆VIO) VO = 1.4 V 0°C 75 98 75 98 dB(∆VDD /∆VIO) 70°C 75 98 75 98 VO = VDD / 2, 25°C 20 34 29 46 IDD Supply current (two amplifiers) VO VDD / 2, VIC = VDD / 2, Nl d 0°C 24 42 36 66 µA No load 70°C 16 28 22 40 † Full range is 0°C to 70°C. NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically. 5. This range also applies to each input individually. 6. At VDD = 5 V. VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.

TLC1078, TLC1078Y, TLC1079, TLC1079Y LinCMOS µPOWER PRECISION OPERATIONAL AMPLIFIERS SLOS179A – FEBRUARY 1997 – REVISED MARCH 2001

8 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

electrical characteristics at specified free-air temperature TLC1079C PARAMETER TEST CONDITIONS TA † VDD = 5 V VDD = 10 V UNIT MIN TYP MAX MIN TYP MAX VIO Input offset voltage 25°C 190 850 200 1150 µVVIO Input offset voltage VO = 1.4 V,VIC = 0, Full range 1200 1500 µV α VIO Temperature coefficient of input offset voltage R S = 50 Ω , R I = 1 MΩ 25°C to 70°C 1.1 1 µV/°C IIO Input offset current 25°C 0.1 60 0.1 60 pAIIO (see Note 4) VO = VDD / 2, 70°C 7 300 7 300 pA IIB Input bias current OD D , VIC = VDD / 2 25°C 0.6 60 0.7 60 pAIIB (see Note 4) 70°C 40 600 50 600 pA VICR Common mode input 25°C –0.2 to 4 –0.3 to 4.2 –0.2 to 9 –0.3 to 9.2 V VICR voltage range (see Note 5) Full range –0.2 to 3.5 –0.2 to 8.5 V V 100 V 25°C 3.2 4.1 8.2 8.9 VOH High-level output voltageVID = 100 mV, R L =1M Ω 0°C 3.2 4.1 8.2 8.9 VR L = 1 M Ω 70°C 3.2 4.2 8.2 8.9 V 100 V 25°C 0 25 0 25 VOL Low-level output voltageVID = –100 mV, IOL =0 0°C 0 25 0 25 mVIOL = 0 70°C 0 25 0 25 L i l diff ti l 25°C 250 525 500 850 AVD Large-signal differential voltage amplification R L = 1 MΩ, See Note 6 0°C 250 700 500 1010 V/mVvoltage am lification 70°C 200 380 350 660 Cd j t i 25°C 70 95 75 97 CMRR Common mode rejection ratio VIC = VICRmin 0°C 70 95 75 97 dBratio 70°C 70 95 75 97 S l lt j ti V 5Vt 1 0V 25°C 75 98 75 98 kSVR Supply-voltage rejection ratio (∆VDD /∆VIO) VDD = 5 V to 10 V, VO =14V 0°C 75 98 75 98 dBratio (∆VDD /∆VIO) VO = 1.4 V 70°C 75 98 75 98 Supply current (four VV / 2 25°C 40 68 57 92 IDD Supply current (four am plifiers) VO = VDD / 2, VIC = VDD / 2, No load 0°C 48 84 72 132 µAam lifiers) VIC = VDD / 2, No load 70°C 31 56 44 80 † Full range is 0°C to 70°C. NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically. 5. This range also applies to each input individually. 6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.

TLC1078, TLC1078Y, TLC1079, TLC1079Y LinCMOS µPOWER PRECISION OPERATIONAL AMPLIFIERS SLOS179A – FEBRUARY 1997 – REVISED MARCH 2001 9POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 operating characteristics at specified free-air temperature TLC1078C PARAMETER TEST CONDITIONS TA VDD = 5 V VDD = 10 V UNIT MIN TYP MAX MIN TYP MAX R1 M Ω C2 0 F 25°C 32 47 SR Slew rate at unity gain R L = 1 MΩ , VI(PP)=1V C L = 20 pF, See Figure 1 0°C 35 51 V/msVI(PP) = 1 V, See Figure 1 70°C 27 38 Vn Equivalent input noise voltagef = 1 kHz, R S = 20 Ω 25°C 68 68 nV/√Hz 25°C 85 110 B1 Unity-gain bandwidth C L = 20 pF, See Figure 2 0°C 100 125 kHz 70°C 65 90 25°C 34° 38° φm Phase margin at unity gain CL = 20 pF, See Figure 2 0°C 36° 40° 70°C 30° 34° operating characteristics at specified free-air temperature TLC1079C PARAMETER TEST CONDITIONS TA VDD = 5 V VDD = 10 V UNIT MIN TYP MAX MIN TYP MAX R1 M Ω C2 0 F 25°C 32 47 SR Slew rate at unity gain R L = 1 MΩ , VI(PP)=1V C L = 20 pF, See Figure 1 0°C 35 51 V/msVI(PP) = 1 V, See Figure 1 70°C 27 38 Vn Equivalent input noise voltagef = 1 kHz, R S = 20 Ω 25°C 68 68 nV/√Hz 25°C 85 110 B1 Unity-gain bandwidth C L = 20 pF, See Figure 2 0°C 100 125 kHz 70°C 65 90 25°C 34° 38° φm Phase margin at unity gain CL = 20 pF, See Figure 2 0°C 36° 40° 70°C 30° 34°

TLC1078, TLC1078Y, TLC1079, TLC1079Y LinCMOS µPOWER PRECISION OPERATIONAL AMPLIFIERS SLOS179A – FEBRUARY 1997 – REVISED MARCH 2001

10 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

electrical characteristics at specified free-air temperature TLC1078I PARAMETER TEST CONDITIONS TA † VDD = 5 V VDD = 10 V UNITCONDITIONS A MIN TYP MAX MIN TYP MAX VIO Input offset voltage V1 4 V 25°C 160 450 180 600 µVVIO Input offset voltage VO = 1.4 V, R S =5 0Ω Full range 950 1100 µV α VIO Temperature coefficient of input offset voltage R S = 50 Ω , VIC = 0, RI = 1 MΩ 25°C to 85°C 1.1 1 µV/°C IIO Input offset current 25°C 0.1 60 0.1 60 pAIIO In ut offset current (see Note 4) VO = VDD / 2, 85°C 24 1000 26 1000 pA IIB Input bias current (see Note 4) OD D , VIC = VDD / 2 25°C 0.6 60 0.7 60 pAIIB Input bias current (see Note 4) 85°C 200 2000 220 2000 pA VICR Common-mode input voltage 25°C –0.2 to 4 –0.3 to 4.2 –0.2 to 9 –0.3 to 9.2 V VICR g range (see Note 5) Full range –0.2 to 3.5 –0.2 to 8.5 V V 100 V 25°C 3.2 4.1 8.2 8.9 VOH High-level output voltage VID = 100 mV, R L =1M Ω –40°C 3.2 4.1 8.2 8.9 VR L = 1 M Ω 85°C 3.2 4.2 8.2 8.9 V 100 V 25°C 0 25 0 25 VOL Low-level output voltage VID = –100 mV, IOL =0 –40°C 0 25 0 25 mVIOL = 0 85°C 0 25 0 25 L i l diff ti l lt R1 M Ω 25°C 250 525 500 850 AVD Large-signal differential voltage am plification R L = 1 MΩ, See Note 6 –40°C 250 900 500 1550 V/mVam lification See Note 6 85°C 150 300 250 585 25°C 70 95 75 97 CMRR Common-mode rejection ratio VIC = VICRmin –40°C 70 95 75 97 dB 85°C 70 95 75 97 S l lt j ti ti 25°C 75 98 75 98 kSVR Supply-voltage rejection ratio (∆VDD /∆VIO) VO = 1.4 V –40°C 75 98 75 98 dB(∆VDD /∆VIO) 85°C 75 98 75 98 VO = VDD / 2, 25°C 20 34 29 46 IDD Supply current (two amplifiers) VO VDD / 2, VIC = VDD / 2, Nl d –40°C 31 54 50 86 µA No load 85°C 15 26 20 36 † Full range is –40°C to 80°C. NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically. 5. This range also applies to each input individually. 6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.

TLC1078, TLC1078Y, TLC1079, TLC1079Y LinCMOS µPOWER PRECISION OPERATIONAL AMPLIFIERS SLOS179A – FEBRUARY 1997 – REVISED MARCH 2001 11POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 electrical characteristics at specified free-air temperature TLC1079I PARAMETER TEST CONDITIONS TA † VDD = 5 V VDD = 10 V UNIT MIN TYP MAX MIN TYP MAX VIO Input offset voltage 25°C 190 850 200 1150 µVVIO Input offset voltage VO = 1.4 V, VIC = 0, Full range 1350 1650 µV α VIO Temperature coefficient of input offset voltage R S = 50 Ω , R I = 1 MΩ 25°C to 85°C 1.1 1 µV/°C IIO Input offset current 25°C 0.1 60 0.1 60 pAIIO (see Note 4) VO = VDD / 2, 85°C 24 1000 26 1000 pA IIB Input bias current OD D , VIC = VDD / 2 25°C 0.6 60 0.7 60 pAIIB (see Note 4) 85°C 200 2000 220 2000 pA VICR Common-mode input voltage range 25°C –0.2 to 4 –0.3 to 4.2 –0.2 to 9 –0.3 to 9.2 V VICR voltage range (see Note 5) Full range –0.2 to 3.5 –0.2 to 8.5 V V 100 V 25°C 3.2 4.1 8.2 8.9 VOH High-level output voltageVID = 100 mV, R L =1M Ω –40°C 3.2 4.1 8.2 8.9 VR L = 1 M Ω 85°C 3.2 4.2 8.2 8.9 V 100 V 25°C 0 25 0 25 VOL Low-level output voltageVID = –100 mV, IOL =0 –40°C 0 25 0 25 mVIOL = 0 85°C 0 25 0 25 L i l diff ti l 25°C 250 525 500 850 AVD Large-signal differential voltage amplification R L = 1 MΩ, See Note 6 –40°C 250 900 500 1550 V/mVvoltage am lification 85°C 150 330 250 585 Cd 25°C 70 95 75 97 CMRR Common-mode rejection ratio VIC = VICRmin –40°C 70 95 75 97 dBrejection ratio 85°C 70 95 75 97 S l lt j ti V 5Vt 1 0V 25°C 75 98 75 98 kSVR Supply-voltage rejection ratio (∆VDD /∆VIO) VDD = 5 V to 10 V, VO =14V –40°C 75 98 75 98 dBratio (∆VDD /∆VIO) VO = 1.4 V 85°C 75 98 75 98 Supply current VV / 2 25°C 40 68 57 92 IDD Supply current (four amplifiers) VO = VDD / 2, VIC =V DD / 2 No load –40°C 62 108 98 172 µA(four am lifiers) VIC = VDD / 2, No load 85°C 29 52 40 72 † Full range is –40°C to 85°C. NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically. 5. This range also applies to each input individually. 6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.

TLC1078, TLC1078Y, TLC1079, TLC1079Y LinCMOS µPOWER PRECISION OPERATIONAL AMPLIFIERS SLOS179A – FEBRUARY 1997 – REVISED MARCH 2001

12 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

operating characteristics at specified free-air temperature TLC1078I PARAMETER TEST CONDITIONS TA VDD = 5 V VDD = 10 V UNIT MIN TYP MAX MIN TYP MAX R1 M Ω C2 0 F 25°C 32 47 SR Slew rate at unity gain R L = 1 MΩ , VI(PP)=1V C L = 20 pF, See Figure 1 –40°C 39 59 V/msVI(PP) = 1 V, See Figure 1 85°C 25 34 Vn Equivalent input noise voltagef = 1 kHz, R S = 20 Ω 25°C 68 68 nV/√Hz 25°C 85 110 B1 Unity-gain bandwidth C L = 20 pF, See Figure 2 –40°C 130 155 kHz 85°C 55 80 25°C 34° 38° φm Phase margin at unity gain CL = 20 pF, See Figure 2 –40°C 38° 40° 85°C 28° 32° operating characteristics at specified free-air temperature TLC1079I PARAMETER TEST CONDITIONS TA VDD = 5 V VDD = 10 V UNIT MIN TYP MAX MIN TYP MAX R1 M Ω C2 0 F 25°C 32 47 SR Slew rate at unity gain R L = 1 MΩ , VI(PP)=1V C L = 20 pF, See Figure 1 –40°C 39 59 V/msVI(PP) = 1 V, See Figure 1 85°C 25 34 Vn Equivalent input noise voltagef = 1 kHz, R S = 20 Ω 25°C 68 68 nV/√Hz 25°C 85 110 B1 Unity-gain bandwidth C L = 20 pF, See Figure 2 –40°C 130 155 kHz 85°C 55 80 25°C 34° 38° φm Phase margin at unity gain CL = 20 pF, See Figure 2 –40°C 38° 42° 85°C 28° 32°

TLC1078, TLC1078Y, TLC1079, TLC1079Y LinCMOS µPOWER PRECISION OPERATIONAL AMPLIFIERS SLOS179A – FEBRUARY 1997 – REVISED MARCH 2001 13POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 electrical characteristics at specified operating free-air temperature TLC1078M PARAMETER TEST CONDITIONS TA † VDD = 5 V VDD = 10 V UNITCONDITIONS A MIN TYP MAX MIN TYP MAX VIO Input offset voltage VO = 1.4 V, 25°C 160 450 180 600 µVVIO Input offset voltage VO = 1.4 V, VIC = 0, Full range 1250 1400 µV α VIO Temperature coefficient of input offset voltage R S = 50 Ω , R L = 1 MΩ 25°C to 125°C 1.4 1.4 µV/°C IIO Input offset current 25°C 0.1 60 0.1 60 pA IIO (see Note 4) VO = VDD / 2, 125°C 1.4 15 1.8 15 nA IIB Input bias current OD D , VIC = VDD / 2 25°C 0.6 60 0.7 60 pA IIB In ut bias current (see Note 4) 125°C 9 35 10 35 nA VICR Common-mode input 25°C 0 to 4 –0.3 to 4.2 to 9 –0.3 to 9.2 V VICR Common mode in ut voltage range (see Note 5) Full range 0 to 3.5 to 8.5 V V 100 V 25°C 3.2 4.1 8.2 8.9 VOH High-level output voltage VID = 100 mV, R L=1M Ω –55°C 3.2 4.1 8.2 8.8 VR L= 1 M Ω 125°C 3.2 4.2 8.2 9 V 100 V 25°C 0 25 0 25 VOL Low-level output voltage VID = –100 mV, IOL =0 –55°C 0 25 0 25 mVIOL = 0 125°C 0 25 0 25 L i l diff ti l R1 M Ω 25°C 250 525 500 850 AVD Large-signal differential voltage amplification R L= 1 MΩ , See Note 6 –55°C 250 950 500 1750 V/mVvoltage am lification See Note 6 125°C 35 200 75 380 25°C 70 95 75 97 CMRR Common-mode rejection ratio VIC = VICRmin –55°C 70 95 75 97 dB 125°C 70 85 75 91 S l lt j ti ti 25°C 75 98 75 98 kSVR Supply-voltage rejection ratio (∆VDD /∆VIO) VO = 1.4 V –55°C 70 98 70 98 dB(∆VDD /∆VIO) 125°C 70 98 70 98 Sl t ( t VO = VDD / 2, 25°C 20 34 29 46 IDD Supply current (two amplifiers) VO VDD / 2, VIC = VDD / 2, Nl d –55°C 35 60 56 96 µAam lifiers) No load 125°C 14 24 18 30 † Full range is –55°C to 125°C. NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically. 5. This range also applies to each input individually. 6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.

TLC1078, TLC1078Y, TLC1079, TLC1079Y LinCMOS µPOWER PRECISION OPERATIONAL AMPLIFIERS SLOS179A – FEBRUARY 1997 – REVISED MARCH 2001

14 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

electrical characteristics at specified free-air temperature TLC1079M PARAMETER TEST CONDITIONS TA † VDD = 5 V VDD = 10 V UNIT MIN TYP MAX MIN TYP MAX VIO Input offset voltage 25°C 190 850 200 1150 µVVIO Input offset voltage VO = 1.4 V,VIC = 0, Full range 1600 1900 µV α VIO Temperature coefficient of input offset voltage R S = 50 Ω , R I = 1 MΩ 25°C to IIO Input offset current 25°C 0.1 60 0.1 60 pA IIO (see Note 4) VO = VDD / 2, 125°C 1.4 15 1.8 15 nA IIB Input bias current OD D , VIC = VDD / 2 25°C 0.6 60 0.7 60 pA IIB (see Note 4) 125°C 9 35 10 35 nA VICR Common mode input 25°C 0 to 4 –0.3 to 4.2 to 9 –0.3 to 9.2 V VICR voltage range (see Note 5) Full range 0 to 3.5 to 8.5 V V 100 V 25°C 3.2 4.1 8.2 8.9 VOH High-level output voltageVID = 100 mV, R L =1M Ω –55°C 3.2 4.1 8.2 8.9 VR L = 1 M Ω 125°C 3.2 4.2 8.2 9 V 100 V 25°C 0 25 0 25 VOL Low-level output voltageVID = –100 mV, IOL =0 –55°C 0 25 0 25 mVIOL = 0 125°C 0 25 0 25 L i l diff ti l 25°C 250 525 500 850 AVD Large-signal differential voltage amplification R L = 1 MΩ , See Note 6 –55°C 250 950 500 1750 V/mVvoltage am lification 125°C 35 200 75 380 Cd j t i 25°C 70 95 75 97 CMRR Common-mode rejection ratio VIC = VICRmin –55°C 70 95 75 97 dBratio 125°C 70 85 75 91 S l lt j ti V 5Vt 1 0V 25°C 75 98 75 98 kSVR Supply voltage rejection ratio (∆VDD /∆VIO) VDD = 5 V to 10 V, VO =14V –55°C 70 98 70 98 dBratio (∆VDD /∆VIO) VO = 1.4 V 125°C 70 98 70 98 Supply current VV / 2 25°C 40 68 57 92 IDD Supply current (four amplifiers) VO = VDD / 2, VIC = VDD / 2, No load –55°C 69 120 111 192 µA(four am lifiers) VIC = VDD / 2, No load 125°C 27 48 35 60 † Full range is –55°C to 125°C. NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically. 5. This range also applies to each input individually. 6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.

TLC1078, TLC1078Y, TLC1079, TLC1079Y LinCMOS µPOWER PRECISION OPERATIONAL AMPLIFIERS SLOS179A – FEBRUARY 1997 – REVISED MARCH 2001 15POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 operating characteristics at specified free-air temperature TLC1078M PARAMETER TEST CONDITIONS TA VDD = 5 V VDD = 10 V UNIT MIN TYP MAX MIN TYP MAX R1 M Ω C2 0 F 25°C 32 47 SR Slew rate at unity gain R L = 1 MΩ , VI(PP)=1V C L = 20 pF, See Figure 1 –55°C 41 63 V/msVI(PP) = 1 V, See Figure 1 125°C 20 27 Vn Equivalent input noise voltagef = 1 kHz, R S = 20 Ω 25°C 68 68 nV/√Hz 25°C 85 110 B1 Unity-gain bandwidth C L = 20 pF, See Figure 2 –55°C 140 165 kHz 125°C 45 70 25°C 34° 38° φm Phase margin at unity gain CL = 20 pF, See Figure 2 –55°C 39° 43° 125°C 25° 29° operating characteristics at specified free-air temperature TLC1079M PARAMETER TEST CONDITIONS TA VDD = 5 V VDD = 10 V UNIT MIN TYP MAX MIN TYP MAX R1 M Ω C2 0 F 25°C 32 47 SR Slew rate at unity gain R L = 1 MΩ , VI(PP)=1V C L = 20 pF, See Figure 1 –55°C 41 63 V/msVI(PP) = 1 V, See Figure 1 125°C 20 27 Vn Equivalent input noise voltagef = 1 kHz, R S = 20 Ω 25°C 68 68 nV/√Hz 25°C 85 110 B1 Unity gain bandwidth C L =2 0pF See Figure 2 –55°C 140 165 B1 Unity-gain bandwidth C L = 20 pF, See Figure 2 125°C 45 70 kHz 25°C 34° 38° kHz φ Phase margin at unity gain C L =2 0pF See Figure 2 –55°C 39° 43° φm Phase margin at unity gain C L = 20 pF, See Figure 2 125°C 25° 29°

16 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

NOTE A: C L includes fixture capacitance. Figure 1. Slew-Rate Test Circuit Figure 2. Unity-Gain Bandwidth and

TLC1078, TLC1078Y, TLC1079, TLC1079Y LinCMOS µPOWER PRECISION OPERATIONAL AMPLIFIERS SLOS179A – FEBRUARY 1997 – REVISED MARCH 2001 17POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TYPICAL CHARACTERISTICS Figure 3 –10 Percentage of Amplifiers – % α VIO – Temperature Coefficient – µV/°C –8 –6 –4 –2 0 2 4 6 8 ÏÏÏÏÏÏÏÏÏÏÏ

356 Amplifiers Tested From 8 Water Lots

ÏÏÏÏÏ VDD = 5 V ÏÏÏÏÏÏ ÏÏÏÏÏÏ TA = 25°C to 125°C ÏÏÏÏ P Package ÏÏÏÏ Outliers: ÏÏÏÏÏ ÏÏÏÏÏ (1) 19.2 µV/°C ÏÏÏÏÏ (1) 12.1 µV/°C DISTRIBUTION OF TLC1078 INPUT OFFSET VOLTAGE TEMPERATURE COEFFICIENT Figure 4 ÏÏÏÏÏÏ ÏÏÏÏÏÏ VDD = 10 V ÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏ TA = 25°C to 125°C ÏÏÏÏÏ P Package ÏÏÏÏÏ Outliers: ÏÏÏÏÏ ÏÏÏÏÏ (1) 18.7 µV/°C ÏÏÏÏÏ (1) 11.6 µV/°C DISTRIBUTION OF TLC1078 INPUT OFFSET VOLTAGE TEMPERATURE COEFFICIENT 86420–2–4–6–8 α VIO – Temperature Coefficient – µV/°C Percentage of Amplifiers – % –10 ÏÏÏÏÏÏÏÏÏÏÏÏ –10 Percentage of Amplifiers – % α VIO – Temperature Coefficient – µV/°C –8 –6 –4 –2 0 2 46 8 DISTRIBUTION OF TLC1079 INPUT OFFSET VOLTAGE TEMPERATURE COEFFICIENT ÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏ

356 Amplifiers Tested From 8 Wafer Lots

ÏÏÏÏÏ ÏÏÏÏÏ VDD = 5 V ÏÏÏÏÏÏ TA = 25°C to 125°C ÏÏÏÏ ÏÏÏÏ N Package ÏÏÏÏÏ ÏÏÏÏÏ Outliers: ÏÏÏÏÏ (1) 19.2 µV/°C ÏÏÏÏÏ ÏÏÏÏÏ (1) 12.1 µV/°C Figure 6 86420–2–4–6–8 α VIO – Temperature Coefficient – µV/°C Percentage of Amplifiers – % –10 DISTRIBUTION OF TLC1079 INPUT OFFSET VOLTAGE TEMPERATURE COEFFICIENT ÏÏÏÏÏ ÏÏÏÏÏ (1) 11.6 µV/°C ÏÏÏÏÏ (1) 18.7 µV/°C ÏÏÏÏ ÏÏÏÏ Outliers: ÏÏÏÏ ÏÏÏÏ N Package ÏÏÏÏÏÏ TA = 25°C to 125°C ÏÏÏÏ ÏÏÏÏ VDD = 10 V ÏÏÏÏÏÏÏÏÏÏÏ

TLC1078, TLC1078Y, TLC1079, TLC1079Y LinCMOS µPOWER PRECISION OPERATIONAL AMPLIFIERS SLOS179A – FEBRUARY 1997 – REVISED MARCH 2001

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TA – Free-Air Temperature – °C 1000 100 105856545 10000 125 0.1 INPUT BIAS AND OFFSET CURRENT † vs FREE-AIR TEMPERATURE – Input Bias and Offset Current – pAI IBand I IO ÏÏÏÏÏ ÏÏÏÏÏ VDD = 10 V ÏÏÏÏ VIC = 5 V ÏÏÏ ÏÏÏ IIO ÏÏÏ ÏÏÏ IIB ÏÏÏÏ ÏÏÏÏ See Note A NOTE A: The typical values of input bias current and input offset current below 5 pA were determined mathematically. Figure 8 1412108642 VDD – Supply Voltage – V COMMON-MODE INPUT VOLTAGE POSITIVE LIMIT vs SUPPLY VOLTAGE – Common-Mode Input Voltage – VVIC ÏÏÏÏ TA = 25°C Figure 9 VDD = 4 V VDD = 3 V VDD = 5 V TA = 25°C VID = 100 mV –8–6–4–2 –10 IOH – High-Level Output Current – mA – High-Level Output Voltage – V HIGH-LEVEL OUTPUT VOLTAGE †‡ vs HIGH-LEVEL OUTPUT CURRENT VOH Figure 10 VDD = 10 V VDD = 16 V VID = 100 mV TA = 25°C14 –30–20–10 –40 IOH – High-Level Output Current – mA HIGH-LEVEL OUTPUT VOLTAGE vs HIGH-LEVEL OUTPUT CURRENT – High-Level Output Voltage – VVOH † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. † The VDD = 3 V curve does not apply to the TLC107xM.

TLC1078, TLC1078Y, TLC1079, TLC1079Y LinCMOS µPOWER PRECISION OPERATIONAL AMPLIFIERS SLOS179A – FEBRUARY 1997 – REVISED MARCH 2001

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VDD = 10 V VDD = 5 V TA = 25°C IOL = 5 mA VIC = |VID/2| 100 200 300 400 500 600 700 800 VID – Differential Input Voltage – V LOW-LEVEL OUTPUT VOLTAGE vs DIFFERENTIAL INPUT VOLTAGE – Low-Level Output Voltage – mVVOL Figure 16 VDD = 10 V VDD = 5 V VID = –1 V VIC = 0.5 V IOL = 5 mA 800 700 600 500 400 300 200 100 1007550250–25–50 900 125 TA – Free-Air Temperature – °C –75 LOW-LEVEL OUTPUT VOLTAGE † vs FREE-AIR TEMPERATURE – Low-Level Output Voltage – mVVOL Figure 17 VDD = 5 V VDD = 4 V VDD = 3 V TA = 25°C VIC = 0.5 V VID = –1 V0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 7654321 IOL – Low-Level Output Current – mA LOW-LEVEL OUTPUT VOLTAGE vs LOW-LEVEL OUTPUT CURRENT – Low-Level Output Voltage – VVOL Figure 18 VDD = 16 V VDD = 10 V VID = –1 V VIC = 0.5 V TA = 25°C2.5 1.5 0.5 252015105 IOL – Low-Level Output Current – mA LOW-LEVEL OUTPUT VOLTAGE vs LOW-LEVEL OUTPUT CURRENT – Low-Level Output Voltage – VVOL † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

TLC1078, TLC1078Y, TLC1079, TLC1079Y LinCMOS µPOWER PRECISION OPERATIONAL AMPLIFIERS SLOS179A – FEBRUARY 1997 – REVISED MARCH 2001

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f – Frequency – Hz 1 M 0.1 10 100 1 k 10 k 100 k 150° 120° 90° 60° 30° 180° Phase Shift TA = 25°C R L = 1 MΩ VDD = 10 V Phase Shift LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT vs FREQUENCY 106 105 104 103 102 101 ÏÏÏ ÏÏÏ AVD AVD – Large-Signal Differential ÁÁ ÁÁ ÁÁ A VD Voltage Amplification Figure 22 Figure 23 TA = –55°C TA = 25°C TA = 125°C R L = 1 MΩ VDD = 5 V VDD = 10 V 101 100 f – Frequency – kHz 0.1 MAXIMUM PEAK OUTPUT VOLTAGE vs FREQUENCY – Maximum Peak Output Voltage – VV OM Figure 24 No Load VO = VDD /2 1412108642 VDD – Supply Voltage – V SUPPLY CURRENT † vs SUPPLY VOLTAGE – Supply Current –IDD µ A ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ TA = –55°C TA = –40°C TA = 0°C TA = 25°C TA = 70°C TA = 125°C † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

TLC1078, TLC1078Y, TLC1079, TLC1079Y LinCMOS µPOWER PRECISION OPERATIONAL AMPLIFIERS SLOS179A – FEBRUARY 1997 – REVISED MARCH 2001

24 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TA = 25°C R S = 20 Ω VDD = 5 V f – Frequency – Hz 200 1000 100 10 100 300 EQUIVALENT INPUT NOISE VOLTAGE vs FREQUENCY Vn – Equivalent Input Noise Voltage – ÁÁ ÁÁ Vn nV/ Hz Figure 30 B VI = 10 mV C L = 20 pF TA = 25°C See Figure 2 130 120 110 100 1412108642 140 VDD – Supply Voltage – V UNITY-GAIN BANDWIDTH vs SUPPLY VOLTAGE – Unity-Gain Bandwidth – kHz1 Figure 31 130 110 1007550250–25–50 125 150 TA – Free-Air Temperature – °C –75 See Figure 2 C L = 20 pF VI = 10 mV VDD = 5 V UNITY-GAIN BANDWIDTH † vs FREE-AIR TEMPERATURE B – Unity-Gain Bandwidth – kHz1 Figure 32 VDD – Supply Voltage – V 42° 30° 2 4 6 8 10 12 14 32° 34° 36° 38° 40° See Figure 2 VI = 10 mV TA = 25°C C L = 20 pF PHASE MARGIN vs SUPPLY VOLTAGE – Phase Marginφm † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

www.ti.com 31-Oct-2013 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp (°C) Device Marking (4/5) Samples TLC1078CD ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 1078C TLC1078CDG4 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 1078C TLC1078CDR ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 1078C TLC1078CDRG4 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 1078C TLC1078CP ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type 0 to 70 TLC1078CP TLC1078CPE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type 0 to 70 TLC1078CP TLC1078ID ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 1078I TLC1078IDG4 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 1078I TLC1078IDR ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 1078I TLC1078IDRG4 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 1078I TLC1078IP ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type -40 to 85 TLC1078IP TLC1078IPE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type -40 to 85 TLC1078IP TLC1078MD OBSOLETE SOIC D 8 TBD Call TI Call TI -55 to 125 1078M TLC1078MDG4 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -55 to 125 1078M TLC1079CD ACTIVE SOIC D 14 50 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 TLC1079C TLC1079CDG4 ACTIVE SOIC D 14 50 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 0 to 70 TLC1079C TLC1079CDR ACTIVE SOIC D 14 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC1079C

www.ti.com 31-Oct-2013 Addendum-Page 2 Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp (°C) Device Marking (4/5) Samples TLC1079CDRG4 ACTIVE SOIC D 14 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC1079C TLC1079CN ACTIVE PDIP N 14 25 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type TLC1079CN TLC1079CNE4 ACTIVE PDIP N 14 25 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type TLC1079CN TLC1079ID ACTIVE SOIC D 14 50 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC1079I TLC1079IDG4 ACTIVE SOIC D 14 50 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC1079I TLC1079IDR ACTIVE SOIC D 14 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC1079I TLC1079IDRG4 ACTIVE SOIC D 14 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC1079I TLC1079IN ACTIVE PDIP N 14 25 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type TLC1079IN TLC1079INE4 ACTIVE PDIP N 14 25 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type TLC1079IN (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

www.ti.com 31-Oct-2013 Addendum-Page 3 (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant PACKAGE MATERIALS INFORMATION www.ti.com 12-Aug-2013 Pack Materials-Page 1

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TLC1078CDR SOIC D 8 2500 340.5 338.1 20.6 TLC1078IDR SOIC D 8 2500 340.5 338.1 20.6 TLC1078IDR SOIC D 8 2500 367.0 367.0 35.0 TLC1079CDR SOIC D 14 2500 367.0 367.0 38.0 TLC1079IDR SOIC D 14 2500 367.0 367.0 38.0 PACKAGE MATERIALS INFORMATION www.ti.com 12-Aug-2013 Pack Materials-Page 2

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