TL494_V01 ONSEMI | Alldatasheet
Document overview
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- PDF pages: 14
Technical content
Features
- Complete Pulse Width Modulation Control Circuitry
- On−Chip Oscillator with Master or Slave Operation
- On−Chip Error Amplifiers
- On−Chip 5.0 V Reference
- Adjustable Deadtime Control
- Uncommitted Output Transistors Rated to 500 mA Source or Sink
- Output Control for Push−Pull or Single−Ended Operation
- Undervoltage Lockout
- NCV Prefix for Automotive and Other Applications Requiring Site and Control Changes
- Pb−Free Packages are Available* MAXIMUM RATINGS (Full operating ambient temperature range applies, unless otherwise noted.) Rating Symbol Value Unit Power Supply Voltage VCC 42 V Collector Output Voltage VC1, VC2 42 V Collector Output Current (Each transistor) (Note 1) IC1, IC2 500 mA Amplifier Input Voltage Range VIR −0.3 to +42 V Power Dissipation @ TA ≤ 45°C PD 1000 mW Thermal Resistance, Junction−to−Ambient R/C0113JA 80 °C/W Operating Junction Temperature TJ 125 °C Storage Temperature Range Tstg −55 to +125 °C Operating Ambient Temperature Range TL494B TL494C TL494I NCV494B TA −40 to +125 0 to +70 −40 to +85 −40 to +125 Derating Ambient Temperature TA 45 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Maximum thermal limits must be observed. *For additional information on our Pb−Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MARKING DIAGRAMS SOIC−16 D SUFFIX CASE 751B See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
x = B, C or I A = Assembly Location WL = Wafer Lot YY, Y = Year WW, W = Work Week G = Pb −Free Package PDIP−16 N SUFFIX CASE 648 *This marking diagram also applies to NCV494. PIN CONNECTIONS CT RT Ground Inv Input ≈ 0.1 V Oscillator VCC 5.0 V REF (Top View) Noninv Input Inv Input Vref Output Contro l V CC Noninv Input Compen/PWN Comp Input Deadtime Control Error Amp
2 Error
TL494, NCV494 www.onsemi.com RECOMMENDED OPERATING CONDITIONS Characteristics Symbol Min Typ Max Unit Power Supply Voltage VCC 7.0 15 40 V Collector Output Voltage VC1, VC2 − 30 40 V Collector Output Current (Each transistor) IC1, IC2 − − 200 mA Amplified Input Voltage Vin −0.3 − VCC − 2.0 V Current Into Feedback Terminal lfb − − 0.3 mA Reference Output Current lref − − 10 mA Timing Resistor RT 1.8 30 500 k/C0087 Timing Capacitor CT 0.0047 0.001 10 /C0109F Oscillator Frequency fosc 1.0 40 200 kHz ELECTRICAL CHARACTERISTICS (VCC = 15 V, CT = 0.01 /C0109F, RT = 12 k/C0087, unless otherwise noted.) For typical values TA = 25°C, for min/max values TA is the operating ambient temperature range that applies, unless otherwise noted. Characteristics Symbol Min Typ Max Unit REFERENCE SECTION Reference Voltage (IO = 1.0 mA) Vref 4.75 5.0 5.25 V Line Regulation (VCC = 7.0 V to 40 V) Regline − 2.0 25 mV Load Regulation (IO = 1.0 mA to 10 mA) Regload − 3.0 15 mV Short Circuit Output Current (Vref = 0 V) ISC 15 35 75 mA OUTPUT SECTION Collector Off−State Current (VCC = 40 V, VCE = 40 V) IC(off) − 2.0 100 /C0109A Emitter Off−State Current VCC = 40 V, VC = 40 V, VE = 0 V) IE(off) − − −100 /C0109A Collector−Emitter Saturation Voltage (Note 2) Common−Emitter (VE = 0 V, IC = 200 mA) Emitter−Follower (VC = 15 V, IE = −200 mA) Vsat(C) Vsat(E) 1.1 1.5 1.3 2.5 V Output Control Pin Current Low State (VOC /C0118 0.4 V) High State (VOC = Vref) IOCL IOCH 0.2 3.5 /C0109A mA Output Voltage Rise Time Common−Emitter (See Figure 12) Emitter−Follower (See Figure 13) tr 100 100 200 200 ns Output Voltage Fall Time Common−Emitter (See Figure 12) Emitter−Follower (See Figure 13) tf 100 100 ns 2. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient temperature as poss ible.
TL494, NCV494 www.onsemi.com ELECTRICAL CHARACTERISTICS (VCC = 15 V, CT = 0.01 /C0109F, RT = 12 k/C0087, unless otherwise noted.) For typical values TA = 25°C, for min/max values TA is the operating ambient temperature range that applies, unless otherwise noted. Characteristics Symbol Min Typ Max Unit ERROR AMPLIFIER SECTION Input Offset Voltage (VO (Pin 3) = 2.5 V) VIO − 2.0 10 mV Input Offset Current (VO (Pin 3) = 2.5 V) IIO − 5.0 250 nA Input Bias Current (VO (Pin 3) = 2.5 V) IIB − −0.1 −1.0 /C0109A Input Common Mode Voltage Range (VCC = 40 V, TA = 25°C) VICR −0.3 to VCC−2.0 V Open Loop Voltage Gain (/C0068VO = 3.0 V, VO = 0.5 V to 3.5 V, RL = 2.0 k/C0087) AVOL 70 95 − dB Unity−Gain Crossover Frequency (VO = 0.5 V to 3.5 V, RL = 2.0 k/C0087) fC− − 350 − kHz Phase Margin at Unity−Gain (VO = 0.5 V to 3.5 V, RL = 2.0 k/C0087) /C0102m − 65 − deg. Common Mode Rejection Ratio (VCC = 40 V) CMRR 65 90 − dB Power Supply Rejection Ratio (/C0068VCC = 33 V, VO = 2.5 V, RL = 2.0 k/C0087) PSRR − 100 − dB Output Sink Current (VO (Pin 3) = 0.7 V) IO− 0.3 0.7 − mA Output Source Current (VO (Pin 3) = 3.5 V) IO+ 2.0 −4.0 − mA PWM COMPARATOR SECTION (Test Circuit Figure 11) Input Threshold Voltage (Zero Duty Cycle) VTH − 2.5 4.5 V Input Sink Current (V(Pin 3) = 0.7 V) II− 0.3 0.7 − mA DEADTIME CONTROL SECTION (Test Circuit Figure 11) Input Bias Current (Pin 4) (VPin 4 = 0 V to 5.25 V) IIB (DT) − −2.0 −10 /C0109A Maximum Duty Cycle, Each Output, Push−Pull Mode (VPin 4 = 0 V, CT = 0.01 /C0109F, RT = 12 k/C0087) (VPin 4 = 0 V, CT = 0.001 /C0109F, RT = 30 k/C0087) DCmax Input Threshold Voltage (Pin 4) (Zero Duty Cycle) (Maximum Duty Cycle) Vth 2.8 3.3 V OSCILLATOR SECTION Frequency (CT = 0.001 /C0109F, RT = 30 k/C0087) fosc − 40 − kHz Standard Deviation of Frequency* (CT = 0.001 /C0109F, RT = 30 k/C0087) /C0115fosc − 3.0 − % Frequency Change with Voltage (VCC = 7.0 V to 40 V, TA = 25°C) /C0068fosc (/C0068V) − 0.1 − % Frequency Change with Temperature (/C0068TA = Tlow to Thigh) (CT = 0.01 /C0109F, RT = 12 k/C0087) /C0068fosc (/C0068T) − − 12 % UNDERVOLTAGE LOCKOUT SECTION Turn−On Threshold (VCC increasing, Iref = 1.0 mA) Vth 5.5 6.43 7.0 V TOTAL DEVICE Standby Supply Current (Pin 6 at Vref, All other inputs and outputs open) (VCC = 15 V) (VCC = 40 V) ICC 5.5 7.0 mA Average Supply Current (CT = 0.01 /C0109F, RT = 12 k/C0087, V(Pin 4) = 2.0 V) (VCC = 15 V) (See Figure 12) − 7.0 − mA * Standard deviation is a measure of the statistical distribution about the mean as derived from the formula, /C0115 N n = 1 /C0083 (Xn − X)2 N − 1
TL494, NCV494 www.onsemi.com Device Package Shipping† TL494BD SOIC−16 48 Units / Rail TL494BDG SOIC−16 (Pb−Free)
48 Units / Rail
TL494BDR2 SOIC−16 2500 Tape & Reel TL494BDR2G SOIC−16 (Pb−Free)
2500 Tape & Reel
TL494CD SOIC−16 48 Units / Rail TL494CDG SOIC−16 (Pb−Free) TL494CDR2 SOIC−16 2500 Tape & Reel TL494CDR2G SOIC−16 (Pb−Free) TL494CN PDIP−16 25 Units / Rail TL494CNG PDIP−16 (Pb−Free)
25 Units / Rail
TL494IN PDIP−16 25 Units / Rail TL494ING PDIP−16 (Pb−Free) NCV494BDR2* SOIC−16 2500 Tape & Reel NCV494BDR2G* SOIC−16 (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NCV494: Tlow = −40°C, Thigh = +125°C. Guaranteed by design. NCV prefix is for automotive and other applications requiring site and change control.
Figure 14. Error−Amplifier Sensing Techniques Figure 15. Deadtime Control Circuit Figure 16. Soft −Start Circuit Figure 17. Output Connections for Single−Ended and Push−Pull Configurations
2.4 V ≤ VOC ≤ Vref
Figure 21. Pulse Width Modulated Step−Down Converter
PDIP−16 CASE 648−08 ISSUE V DATE 22 APR 2015 SCALE 1:1 XXXXX = Specific Device Code A = Assembly Location WL = Wafer Lot YY = Year WW = Work Week G = Pb −Free Package GENERIC MARKING DIAGRAM* XXXXXXXXXXXX XXXXXXXXXXXX AWLYYWWG *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ /C0071”, may or may not be present. STYLE 1: PIN 1. CATHODE 2. CATHODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE 7. CATHODE 8. CATHODE 9. ANODE 10. ANODE 11. ANODE 12. ANODE 13. ANODE 14. ANODE 15. ANODE 16. ANODE STYLE 2: PIN 1. COMMON DRAIN 2. COMMON DRAIN 3. COMMON DRAIN 4. COMMON DRAIN 5. COMMON DRAIN 6. COMMON DRAIN 7. COMMON DRAIN 8. COMMON DRAIN 9. GATE 10. SOURCE 11. GATE 12. SOURCE 13. GATE 14. SOURCE 15. GATE 16. SOURCE 16 9 b2NOTE 8 D A TOP VIEW B b L A C SEATING PLANE
0.010 CASIDE VIEW M
e NOTE 3 M B M eB E END VIEW END VIEW WITH LEADS CONSTRAINED DIM MIN MAX INCHES A −−−− 0.210 A1 0.015 −−−− b 0.014 0.022 C 0.008 0.014 D 0.735 0.775 D1 0.005 −−−− e 0.100 BSC E 0.300 0.325 M −−−− 10 −−− 5.33 0.38 −−− 0.35 0.56 0.20 0.36 18.67 19.69 0.13 −−−
2.54 BSC
7.62 8.26 −−− 10 MIN MAX MILLIMETERS NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSIONS A, A1 AND L ARE MEASURED WITH THE PACK- AGE SEATED IN JEDEC SEATING PLANE GAUGE GS−3. 4. DIMENSIONS D, D1 AND E1 DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS ARE NOT TO EXCEED 0.10 INCH. 5. DIMENSION E IS MEASURED AT A POINT 0.015 BELOW DATUM PLANE H WITH THE LEADS CONSTRAINED PERPENDICULAR TO DATUM C. 6. DIMENSION eB IS MEASURED AT THE LEAD TIPS WITH THE LEADS UNCONSTRAINED. 7. DATUM PLANE H IS COINCIDENT WITH THE BOTTOM OF THE LEADS, WHERE THE LEADS EXIT THE BODY . 8. PACKAGE CONTOUR IS OPTIONAL (ROUNDED OR SQUARE CORNERS). E1 0.240 0.280 6.10 7.11 0.060 TYP 1.52 TYP c A2 0.115 0.195 2.92 4.95 L 0.115 0.150 2.92 3.81 H NOTE 5 NOTE 6 M e/2 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 98ASB42431BDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1PDIP−16 © Semiconductor Components Industries, LLC, 2019 www.onsemi.com
SOIC−16 CASE 751B−05 ISSUE K DATE 29 DEC 2006SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 16 9 SEATING PLANE F JM R X 45/C0095 G
8 PLP−B−
−A− M0.25 (0.010) B S −T− D K C 16 PL SBM0.25 (0.010) A ST DIM MIN MAX MIN MAX INCHESMILLIMETERS A 9.80 10.00 0.386 0.393 B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.054 0.068 D 0.35 0.49 0.014 0.019 F 0.40 1.25 0.016 0.049 G 1.27 BSC 0.050 BSC J 0.19 0.25 0.008 0.009 K 0.10 0.25 0.004 0.009 M 0 7 0 7 P 5.80 6.20 0.229 0.244 R 0.25 0.50 0.010 0.019 /C0095/C0095/C0095/C0095 6.40 16X 0.58 16X 1.12 1.27 DIMENSIONS: MILLIMETERS PITCH SOLDERING FOOTPRINT STYLE 1: PIN 1. COLLECTOR 2. BASE 3. EMITTER 4. NO CONNECTION 5. EMITTER 6. BASE 7. COLLECTOR 8. COLLECTOR 9. BASE 10. EMITTER 11. NO CONNECTION 12. EMITTER 13. BASE 14. COLLECTOR 15. EMITTER 16. COLLECTOR STYLE 2: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION 4. CATHODE 5. CATHODE 6. NO CONNECTION 7. ANODE 8. CATHODE 9. CATHODE 10. ANODE 11. NO CONNECTION 12. CATHODE 13. CATHODE 14. NO CONNECTION 15. ANODE 16. CATHODE STYLE 3: PIN 1. COLLECTOR, DYE #1 2. BASE, #1 3. EMITTER, #1 4. COLLECTOR, #1 5. COLLECTOR, #2 6. BASE, #2 7. EMITTER, #2 8. COLLECTOR, #2 9. COLLECTOR, #3 10. BASE, #3 11. EMITTER, #3 12. COLLECTOR, #3 13. COLLECTOR, #4 14. BASE, #4 15. EMITTER, #4 16. COLLECTOR, #4 STYLE 4: PIN 1. COLLECTOR, DYE #1 2. COLLECTOR, #1 3. COLLECTOR, #2 4. COLLECTOR, #2 5. COLLECTOR, #3 6. COLLECTOR, #3 7. COLLECTOR, #4 8. COLLECTOR, #4 9. BASE, #4 10. EMITTER, #4 11. BASE, #3 12. EMITTER, #3 13. BASE, #2 14. EMITTER, #2 15. BASE, #1 16. EMITTER, #1 STYLE 5: PIN 1. DRAIN, DYE #1 2. DRAIN, #1 3. DRAIN, #2 4. DRAIN, #2 5. DRAIN, #3 6. DRAIN, #3 7. DRAIN, #4 8. DRAIN, #4 9. GATE, #4 10. SOURCE, #4 11. GATE, #3 12. SOURCE, #3 13. GATE, #2 14. SOURCE, #2 15. GATE, #1 16. SOURCE, #1 STYLE 6: PIN 1. CATHODE 2. CATHODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE 7. CATHODE 8. CATHODE 9. ANODE 10. ANODE 11. ANODE 12. ANODE 13. ANODE 14. ANODE 15. ANODE 16. ANODE STYLE 7: PIN 1. SOURCE N‐CH 2. COMMON DRAIN (OUTPUT) 3. COMMON DRAIN (OUTPUT) 4. GATE P‐CH 5. COMMON DRAIN (OUTPUT) 6. COMMON DRAIN (OUTPUT) 7. COMMON DRAIN (OUTPUT) 8. SOURCE P‐CH 9. SOURCE P‐CH 10. COMMON DRAIN (OUTPUT) 11. COMMON DRAIN (OUTPUT) 12. COMMON DRAIN (OUTPUT) 13. GATE N‐CH 14. COMMON DRAIN (OUTPUT) 15. COMMON DRAIN (OUTPUT) 16. SOURCE N‐CH MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 98ASB42566BDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1SOIC−16 © Semiconductor Components Industries, LLC, 2019 www.onsemi.com
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