TL1006 STMICROELECTRONICS | Alldatasheet
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Technical content
(77 SGS-THOMSON , MICROELECTROMIGS TL 1006 ---> TL 8006 SCR
FEATURES
= HIGH SURGE CAPABILITY » HIGH ON-STATE CURRENT A 4 > K = HIGH STABILITY AND RELIABILITY (c}
DESCRIPTION
The TL 1006 ---> TL 8006 Family of Silicon Con- K trolled Rectifiers uses a high performance glass AG passivated technology. This general purpose Family of Silicon Controlled TL Rectifiers is designed for power supplies up to (Plastic) 400Hz on resistive or inductive load. ABSOLUTE RATINGS (limiting values) [| symbot | Parameter | vate tt a (180° conduction angle) (AV) Average on-state current T= 55°C A (180° conduction angle, single phase circuit) TSM Non repetitive surge peak on-state current A ( 7} initial = 25°C ) [p-toms | I a Critical rate of rise of on-state current Alus Gate supply : IG = 100 mA dig/dt = 1 As Tstg Storage and operating junction temperature range - 40 to+ 150 °C Ti - 40 to+ 110 °C Tl Maximum lead temperature for soldering during 4 s at 4.5 mm °C from case | 1006 | 2006 | soe | soos | ovos | eles [Pil Varm | T= 110°C March 1995 4 me 7929237 0075929 674 Mi
TL 1006 ---> TL 8006 eS THERMAL RESISTANCES a Junction to ambient on printed circuit with Cu surface 1¢m2 | i cow | GATE CHARACTERISTICS (maximum values) PG (Av)= 1W Pam = 10W (tp = 20 us) IFGM = 4A (p= 20us) VaGM= SV.
ELECTRICAL CHARACTERISTICS
[moo [rnonanine Sie] [ver [very 00 mon | ase [une fs [veo [Vorvonm aaa ero f ww [0 Lv] VD=VDRM_ |G = 40mA Tj=25°C TYP us digidt = 0.5A/is Pe eer ide [re |e | a 8 i or 6 dd a I Vv Rated “we po aVidt Linear slope up to Vp=67%VpRM Tj= 110°C Vips gate open VD=67%VDRM 'TM=6A_ VpR= 10V. Tj= 110°C | TYP 70 BS ditwdt=10 Aus = dVp/dt= 20Vis. A ses omson——— SF ianskoe Sar aes @™ 7929237 0075930 356 mm
TL 1006 ---> TL 8006 Fig.1 : Maximum average power dissipation versus Fig.2 : Correlation between maximum average power average on-state current. dissipation and maximum allowable temperatures (Tamb and Tlead)- P (Ww) P (Ww) Tlead (*C) 5 4 50 beat Lf Ae | fe le Z| oc 3 (Anew) | ON Te yore SCN . 90 | 6A Q- 60 | || 1 SY 100 \\ . Tamb (°C) o 05 1 15 2 25 3 35 4 0 20 40 60 80 100 120 140 Fig.3 : Average on-state current versus leads Fig.4 : Thermal transient impedance junction to temperature. ambient versus pulse duration. Vrgayy (A) Zth iva (}C/W) 3.5; 50 7 a eee amie at Mi Pai at scree UICC alt TN TT TT 0 Ml cpa PSR SCT VY SEES OC vitro TEN ARIEL TIME TIME [st 0 10 20 30 40 60 60 70 80 90 100110120 S9E-C1 — LOEDD LOE. «EDR LOEWS—«LOELOH Fig.5 : Relative variation of gate trigger current versus Fig.6 : Non repetitive surge peak on-state current junction temperature. versus number of cycles. TZ) THTEZS liad ” “U ST el NE PEC TT 15S TH PSN ify Hep IT ul SSS 20 Ae a eatll Pe Listers Ul In 240-80-20-10 0 10 20 90 40 GO BO 70 80 0 100110 % 10 100 1000 . 3/4 TE ES mi 792923? 0075931 222
TL 1006 ---> TL 8006 Fig.7 : Non repetitive surge peak on-state current for a Fig.8 ; On-state characteristics (maximum values). sinusoidal pulse with width : t < 10 ms, and corresponding value of I2t. Nya (A). 1" (A's) ty (A) a 0 \\—— 7] initial - 25°C AH —— ee = = — a [f ee PTT raw] alo 900 Y _—— SSE max = max — ane a Vio * 1.07 a a SS or Rt -0.138 a EE Fete | Hoh ‘0 JT TT TT vn 1 2 5 10 123465 6789 01 PACKAGE MECHANICAL DATA TL Plastic * “ Pa i £ | Min. [ Max. | Min | Max. | [8 | 755 | 805 | 0207 | 0317 F 8 [-¢ [i270] [osoo| _| [F | 675 | 7.25 | 0266 | 0285 | y tala, [1 [075 | 025 [0.029 | 003s | Marking : type number Weight : 0.8 g Information furnished is believed to be accurate and reliable, However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without ‘express written approval of SGS-THOMSON Microelectronics. © 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved, ‘SGS-THOMSON Microelectronics GROUP OF COMPANIES ‘Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 4l4 S/ Meee aa mm 7929237 0075932 169 a