TK040N60Z1 TOSHIBA | Alldatasheet

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MOSFETs Silicon N-Channel MOS (DTMOS ) TK040N60Z1 Start of commercial production 2024-06 1. Applications

  • Switching Power Supplies 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.033 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 2.4 mA) 3. Packaging and Internal Circuit TO-247 1: Gate 2: Drain (heatsink) 3: Source 4. Absolute Maximum Ratings (Note) (T a = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Single-pulse avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature Mounting torque (Tc = 25 ) (Note 1) (Note 1) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAS IDR IDRP Tch Tstg TOR Rating 600 ±30 208 297 1049 8.0 208 150 -55 to 150 0.8 Unit V A W mJ A N m Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2023-12-06 Rev.3.0 ©2023 Toshiba Electronic Devices & Storage Corporation
  1. Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Symbol Rth(ch-c) Rth(ch-a) Max 0.420 Unit Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: VDD = 90 V, Tch = 25 (initial), L = 29 mH, IAS = 8.0 A Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 6. Electrical Characteristics 6.1. Static Characteristics (T a = 25 unless otherwise specified) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance Symbol IGSS IDSS V(BR)DSS Vth RDS(ON) Test Condition VGS = ±30 V, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 2.4 mA VGS = 10 V, ID = 21.2 A Min 600 Typ. 0.033 Max 0.040 Unit µA V Ω 6.2. Dynamic Characteristics (T a = 25 unless otherwise specified) Characteristics Input capacitance Reverse transfer capacitance Output capacitance Effective output capacitance (energy related) Effective output capacitance (time related) Gate resistance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time) MOSFET dv/dt ruggedness (Note 3) (Note4) Symbol Ciss Crss Coss Co(er) Co(tr) rg tr ton tf toff dv/dt Test Condition VDS = 300 V, VGS = 0 V, f = 100 kHz VDS = 0 to 400 V, VGS = 0 V VDS = 0 to 400 V, VGS = 0 V VDS = OPEN , f = 1 MHz See Fig.6.2.1 VDS ≤ VDSS, ID ≤ 26 A Min 120 Typ. 5200 4.0 120 200 1450 2.4 120 150 Max Unit pF Ω ns V/ns Note 3: CO(er) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 V to 400 V. Note4: CO(tr) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 V to 400 V. VDD ≈ 400 V VGS = 10 V/0 V ID = 26 A RL = 15 Ω RG = 10 Ω Duty ≤ 1 %, tw = 10 µs Fig. 6.2.1 Switching Time Test Circuit 2023-12-06 Rev.3.0 ©2023 Toshiba Electronic Devices & Storage Corporation

6.3. Gate Charge Characteristics (T a = 25 unless otherwise specified) Characteristics Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain charge Symbol Qg Qgs1 Qgd Test Condition VDD ≈ 400 V, VGS = 10 V, ID = 52 A Min Typ. Max Unit nC 6.4. Source-Drain Characteristics (T a = 25 unless otherwise specified) Characteristics Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Diode dv/dt ruggedness Symbol VDSF trr Qrr Irr dv/dt Test Condition IDR = 52 A, VGS = 0 V VDD = 400 V, IDR = 26 A, VGS = 0 V -dIDR/dt = 100 A/µs VDD ≤ 400 V, IDR ≤ 26 A, VGS = 0 V Min Typ. 380 6.7 Max -1.7 Unit V ns µC A V/ns 7. Marking (Note) Fig. 7.1 Marking Note: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2023-12-06 Rev.3.0 ©2023 Toshiba Electronic Devices & Storage Corporation

  1. Characteristics Curves (Note) Fig. 8.1 ID - V DS Fig. 8.2 ID - V DS Fig. 8.3 ID - V GS Fig. 8.4 VDS - V GS Fig. 8.5 VDSS - T a Fig. 8.6 RDS(ON) - I D 2023-12-06 Rev.3.0 ©2023 Toshiba Electronic Devices & Storage Corporation

Fig. 8.7 RDS(ON) - T a Fig. 8.8 IDR - V DS Fig. 8.9 C - V DS Fig. 8.10 Vth - T a Fig. 8.11 Dynamic Input/Output Characteristics Fig. 8.12 EOSS - V DS 2023-12-06 Rev.3.0 ©2023 Toshiba Electronic Devices & Storage Corporation

Fig. 8.13 rth - t w (Guaranteed Maximum) Fig. 8.14 EAS - T ch (Guaranteed Maximum) Fig. 8.15 PD - T c (Guaranteed Maximum) Fig. 8.16 Test Circuit/Waveform Fig. 8.17 ID - T c (Guaranteed Maximum) 2023-12-06 Rev.3.0 ©2023 Toshiba Electronic Devices & Storage Corporation

Fig. 8.18 Safe Operating Area (Guaranteed Maximum) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 2023-12-06 Rev.3.0 ©2023 Toshiba Electronic Devices & Storage Corporation

Unit: mm Weight: 6.15 g (typ.) Package Name(s) TOSHIBA: 2-16L1A Nickname: TO-247 2023-12-06 Rev.3.0 ©2023 Toshiba Electronic Devices & Storage Corporation

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