TFR3N TOSHIBA | Alldatasheet
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TOSHIBA TFR3N,TFR3T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR3N, TFR3T STROBO FLASHER APPLICATIONS (FAST RECOVERY) Unit in mm ¢ Average Forward Current : Ip(ayy=0.2 ey | © Repetitive Peak Reverse Voltage : VRRM=1000, 1500V ow . @ Reverse Recovery Time : typ =L5ys Zz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL | RATING | UNIT 3 } Repetitive Peak Reverse | TFR3N Vv [1000 | Vv ° Voltage TFR3T | ‘RRM 1500 gos ; Average Forward Current IR(AV) [| o2 | A | 5 Pt Limit Value (@=1-10ma) [| re | 05 | A'S | Og Peak One Cycle Surge Forward I 10 (60H2) |. Current (Non Repetitive) FSM 11 (60Hz) i . ~ 1. ANODE rage Temperature Range ‘st JEDEC _ TOSHIBA —_3-3E1A ELECTRICAL CHARACTERISTICS (Ta = 25°C) Weight : 0.225¢ CHARACTERISTIC SYMBOL TEST CONDITION | wan. | rye. [Max. |unrr] Peak Forward Voltage Tear= 0.04 LT ae Repetitive Peak Reverse I = A fare | mw [vena | = |= | | Reverse Recovery Time Tp=10mA, TR=TOmA P= T= as Te | MARKING Type Code / tot Number Lay 4 aia Color : Yellow FR3N TFR3N lees fa L month (Starting from Alphabet A)L_£R8?_[TFRET Year (Last Number of the Christian Era) Cathode Mark 2610016402 malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 1996-12-02 1/2
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a _1 LIT tT Ti 1 3 10 30 100 NUMBER OF CYCLES AT 50Hz Q61001EAA2’ by implication or otherwise under any intellectual Broperty ‘or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1996-12-02 2/2