TFP70N06

TFP70N06 THINKISEMI | Alldatasheet

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Technical content

Features

(on) (0.014Ω )@V GS =10V Low Gate Charge (Typical 70nC) Low Crss (Typical 160pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (175°C) General Description planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for synchronous DC-DC Converters and Power Management in portable and battery operated products. Absolute Maximum Ratings Symbol Parameter Value Units V DSS Drain to Source Voltage 60 V I D Continuous Drain Current(@T C = 25 °C) 70 A Continuous Drain Current(@T C = 100 °C) 51 A I DM Drain Current Pulsed (Note 1) 280 A V GS Gate to Source Voltage ±25 V E AS Single Pulsed Avalanche Energy (Note 2) 800 mJ dv/dt Peak Diode Recovery dv/dt (Note 3)

7.0 V/ns

P D Total Power Dissipation(@T C = 25 °C) 158 W Derating Factor above 25 °C 1.05 W/°C T STG, T J Operating Junction Temperature & Storage Temperature - 55 ~ 175 °C T L Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. 300 °C Thermal Characteristics Symbol Parameter Value Units Min. Typ. Max. R θJC Thermal Resistance, Junction-to-Case - - 0.95 °C/W R θCS Thermal Resistance, Case to Sink - 0.5 - °C/W R θJA Thermal Resistance, Junction-to-Ambient - - 62.5 °C/W This Power MOSFET is produced using ThinkiSemi's advanced

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/7Rev.09T

Electrical Characteristics

( T C = 25 °C unless otherwise noted ) Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0V, I D = 250uA 60 - - V Δ BV DSS Δ T J Breakdown Voltage Temperature coefficient I D = 250uA, referenced to 25 °C - 0.066 - V/°C I DSS Zero Gate Voltage Drain Current V DS = 60V, V GS = 0V -- 1 u A V DS = 48V, T C = 150 °C -- 1 0 u A I GSS Gate-Source Leakage, Forward V GS = 25V, V DS = 0V 100 nA Gate-Source Leakage, Reverse V GS = -25V, V DS = 0V - - -100 nA On Characteristics V GS(th) Gate Threshold Voltage V DS = V GS , I D = 250uA 2.0 - 4.0 V R DS(ON) Static Drain-Source On-state Resis- tance V GS =10 V, I D = 35A - - 0.014 Ω Dynamic Characteristics C iss Input Capacitance V GS =0 V, V DS =25V, f = 1MHz - 2350 3050 pFC oss Output Capacitance - 690 890 C rss Reverse Transfer Capacitance - 160 200 Dynamic Characteristics t d(on) Turn-on Delay Time V DD =30V, I D =35A, R G =50Ω ※ see fig. 13. (Note 4, 5) -3 0 7 0 ns t r Rise Time - 60 130 t d(off) Turn-off Delay Time - 125 260 t f Fall Time - 95 200 Q g Total Gate Charge V DS =48V, V GS =10V, I D =70A ※ see fig. 12. (Note 4, 5) -7 0 9 0 nCQ gs Gate-Source Charge - 18 - Q gd Gate-Drain Charge(Miller Charge) - 24 - Source-Drain Diode Ratings and Characteristics Symbol Parameter Test Cond itions Min. Typ. Max. Unit. I S Continuous Source Current Integral Reverse p-n Junction Diode in the MOSFET -- 7 0 AI SM Pulsed Source Current - - 280 V SD Diode Forward Voltage I S =70A, V GS =0V - - 1.5 V t rr Reverse Recovery Time I S =70A,V GS =0V,dI F /dt=100A/us -6 2 -n s Q rr Reverse Recovery Charge - 110 - nC NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. L = 250 uH, I AS = 70A, V DD = 25V, R G = 0Ω , Starting T J = 25°C 3. ISD ≤ 70A, di/dt ≤ 300A/us, V DD ≤ BV DSS , Starting T J = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature. TFP70N06

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 3/7Rev.09T 175 Notes : 1. V GS = 0V 2. 250µ s Pulse Test I DR , Reverse Drain Current [A] V SD , Source-Drain voltage [V] 0 50 100 150 200 250 300 V GS = 10V V GS = 20V Note : T J = 25 R DS(ON) Drain-Source On-Resistance [mΩ ] I D , Drain Current [A] 2468 1 0 175 o C o C -55 o C Notes : 1. V DS = 25V 2. 250µ s Pulse Test I D , Drain Current [A] V GS , Gate-Source Voltage [V] V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Notes : 1. 250µ s Pulse Test 2. T C = 25 I D , Drain Current [A] V DS , Drain-Source Voltage [V] 0 1 02 03 04 05 06 07 0 V DS = 30V V DS = 48V Note : I D = 70.0 A V GS , Gate-Source Voltage [V] Q G , Total Gate Charge [nC] 0 5 10 15 20 25 30 35 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 C rss C oss C iss Notes : 1. V GS = 0V 2. f=1MHz C iss gs gd ds =shorted) C oss ds gd C rss gd Capacitance [pF] V DS , Drain-Source Voltage [V] Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage Fig 4. On State Current vs. Allowable Case Temperature Fig 5. Capacitance Characteristics Fig 6. Gate Charge Characteristics Fig 1. On-State Characteristics Fig 2. Transfer Characteristics TFP70N06

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 4/7Rev.09T DC 10 ms 1 ms 100 µ s Operation in This Area is Limited by R DS(on) Notes : 1. T C = 25 o C 2. T J = 175 o C 3. Single Pulse I D , Drain Current [A] V DS , Drain-Source Voltage [V] N otes : 1. Z θ JC (t) = 0.95 /W Max. 2. D uty Factor, D =t 3. T JM - T C = P DM * Z θ JC (t) single pulse D=0. 5 0.02 0.2 0.05 0.1 0.01 Z θ JC (t), Thermal Response t , Square W ave Pulse Duration [sec] 25 50 75 100 125 150 175 I Drain Current [A] T Case Temperature [ o -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Notes : 1. V GS = 10 V 2. I D = 35 A R DS(ON) , (Normalized) Drain-Source On-Resistance T J , Junction Temperature [ o -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 Notes : 1. V GS = 0 V 2. I D = 250 µ A BV DSS , (Normalized) Drain-Source Breakdown Voltage T J , Junction Temperature [ o Fig 9. Maximum Safe Operating Area Fig 10. Maximum Drain Current vs. Case Temperature Fig 11. Transient Thermal Response Curve Fig 7. Breakdown Voltage Variation vs. Junction Temperature Fig 8. On-Resistance Variation vs. Junction Temperature TFP70N06

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 5/7Rev.09T Fig 13. Switching Time Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms Fig. 12. Gate Charge Test Circuit & Waveforms E AS L I AS ----2 BV DSS -- V DD BV DSS E AS L I AS ----2 AS L I AS ----2 1----2 BV DSS -- V DD BV DSS V DD V DS BV DSS t p V DD I AS V DS (t) I D (t) Time BV DSS t p V DD I AS V DS (t) I D (t) Time 10V DUT R G L L I D I D Charge V GS 10V Q g Q gs Q gd 1mA V GS DUT V DS 300nF 50KΩ 200nF12V Same Type as DUT Charge V GS 10V Q g Q gs Q gd Charge V GS 10V Q g Q gs Q gd 1mA V GS DUT V DS 300nF 50KΩ 200nF12V Same Type as DUT V in V DS 10% 90% t d(on) t r t on t off t d(off) t f V DD ( 0.5 rated V DS 10V V DS R L DUT Pulse Generator V in V DS 10% 90% t d(on) t r t on t off t d(off) t f V in V DS 10% 90% t d(on) t r t on t off t d(off) t f V DD ( 0.5 rated V DS V V DS R L DUT Pulse Generator R G V in V DS 10% 90% t d(on) t r t on t off t d(off) t f V in V DS 10% 90% t d(on) t r t on t off t d(off) t f V DD ( 0.5 rated V DS 10V V DS R L DUT Pulse Generator V in V DS 10% 90% t d(on) t r t on t off t d(off) t f V in V DS 10% 90% t d(on) t r t on t off t d(off) t f V DD ( 0.5 rated V DS V V DS R L DUT Pulse Generator R G TFP70N06

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 6/7Rev.09T DUT V DS Driver R G Same Type as DUT V GS

• dv/dt controlled by R G S controlled by pulse period V DD L L I S I S Fig. 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms 10V V GS ( Driver ) I S ( DUT ) V DS ( DUT ) V DD Body Diode Forward Voltage Drop V f I FM , Body Diode Forward Current Body Diode Reverse Current I RM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width 10V V GS ( Driver ) I S ( DUT ) V DS ( DUT ) V DD Body Diode Forward Voltage Drop V f I FM , Body Diode Forward Current Body Diode Reverse Current I RM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width TFP70N06

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 7/7Rev.09T Dim. mm Inch A 9.7 10.1 0.382 0.398 B 6.3 6.7 0.248 0.264 C 9.0 9.47 0.354 0.373 D 12.8 13.3 0.504 0.524 E 1.2 1.4 0.047 0.055 F 1.7 0.067 G 2.5 0.098 H 3.0 3.4 0.118 0.134 I 1.25 1.4 0.049 0.055 J 2.4 2.7 0.094 0.106 K 5.0 5.15 0.197 0.203 L 2.2 2.6 0.087 0.102 M 1.14 1.40 0.045 0.055 N 0.45 0.6 0.018 0.024 O 0.75 0.95 0.030 0.037 Ø 3.6 0.142 1. Gate 2. Drain 3. Source A B C I G L M E F φ H K N O J D TFP70N06