TFP50N06

TFP50N06 THINKISEMI | Alldatasheet

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Technical content

Features

R DS(ON) = 0.022 ohm I D = 50A BV DSS = 60V 2. Drain 3. Source 1. Gate Pb Free Plating Product TFP50N06 Pb 50A,60V Heatsink Planar N-Channel Power MOSFET General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technol- ogy intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220M-SQ pkg is well suited for adaptor power units,amplifiers,inverters and SMPS application. TO-220M-SQ 1 2 3  50A, 60V, R DS(on) = 0.022Ω @V GS = 10 V  Low gate charge ( typical 31 nC)  Low Crss ( typical 65 pF)  Fast switching  100% avalanche tested  Improved dv/dt capability  175 °C maximum junction temperature rating Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics V DSS Drain-Source Voltage 60 V I D Drain Current - Continuous (T C = 25°C) 50 A - Continuous (T C = 100°C) 35.4 A I DM Drain Current - Pulsed (Note 1) 200 A V GSS Gate-Source Voltage ± 25 V E AS Single Pulsed Avalanche Energy (Note 2) 490 mJ I AR Avalanche Current (Note 1) 50 A E AR Repetitive Avalanche Energy (Note 1) 12 mJ dv/dt Peak Diode Recovery dv/dt (Note 3)

7.0 V/ns

P D Power Dissipation (T C = 25°C) 120 W - Derate above 25°C 0.8 W/°C T J , T STG Operating and Storage Temperature Range -55 to +175 °C T L Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units R θJC Thermal Resistance, Junction-to-Case -- 1.24 °C /W R θCS Thermal Resistance, Case-to-Sink 0.5 -- °C /W R θJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C /W Symbol Parameter TFP50N06 Units TFP50N06 © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 1/6Rev.08C

Electrical Characteristics

T C = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 230µH, I AS = 50A, V DD = 25V, R G = 25 Ω, Starting T J = 25°C 3. I SD ≤ 50A, di/dt ≤ 300A/µs, V DD ≤ BV DSS, Starting T J = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0 V, I D ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient I D = 250 µA, Referenced to 25°C -- 0.06 -- V/°C I DSS Zero Gate Voltage Drain Current V DS = 60 V, V GS = 0 V -- -- 1 µA V DS = 48 V, T C I GSSF Gate-Body Leakage Current, Forward V GS = 25 V, V DS = 0 V -- -- 100 nA I GSSR Gate-Body Leakage Current, Reverse V GS = -25 V, V DS On Characteristics V GS(th) Gate Threshold Voltage V DS = V GS , I D = 250 µA 2.0 -- 4.0 V R DS(on) Static Drain-Source On-Resistance V GS = 10 V, I D = 25 A -- 0.018 0.022 Ω g FS Forward Transconductance V DS = 25 V, I D = 25 A -- 22 -- S Dynamic Characteristics C iss Input Capacitance V DS = 25 V, V GS = 0 V, f = 1.0 MHz -- 1180 1540 pF C oss Output Capacitance -- 440 580 pF C rss Reverse Transfer Capacitance -- 65 90 pF Switching Characteristics t d(on) Turn-On Delay Time V DD = 30 V, I D = 25 A, R G = 25 Ω -- 15 40 ns t r Turn-On Rise Time -- 105 220 ns t d(off) Turn-Off Delay Time -- 60 130 ns t f Turn-Off Fall Time -- 65 140 ns Q g Total Gate Charge V DS = 48 V, I D = 50 A, V GS = 10 V -- 31 41 nC Q gs Gate-Source Charge -- 8 -- nC Q gd Gate-Drain Charge -- 13 -- nC Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- 50 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- 200 A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 50 A -- -- 1.5 V t rr Reverse Recovery Time V GS = 0 V, I S = 50 A, dI F / dt = 100 A/µs -- 52 -- ns Q rr Reverse Recovery Charge -- 75 -- nC (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 2/6Rev.08C TFP50N06

Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms Charge V GS 10V Q g Q gs Q gd 3mA V GS DUT V DS 300nF 50KΩ 200nF12V Same Type as DUT Charge V GS 10V Q g Q gs Q gd 3mA V GS DUT V DS 300nF 50KΩ 200nF12V Same Type as DUT V GS V DS 10% 90% t d(on) t r t on t off t d(off) t f V DD 10V V DS R L DUT R G V GS V GS V DS 10% 90% t d(on) t r t on t off t d(off) t f V DD 10V V DS R L DUT R G V GS E AS =L I AS ----2 BV DSS DD BV DSS V DD V DS BV DSS t p V DD I AS V DS (t) I D (t) Time 10V DUT R G L I D t p E AS =L I AS ----2 AS =L I AS ----2 1----2 BV DSS DD BV DSS V DD V DS BV DSS t p V DD I AS V DS (t) I D (t) Time 10V DUT R G L L I D I D t p © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 5/6Rev.08C TFP50N06

Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT V DS Driver R G Same Type as DUT V GS  dv/dt controlled by R G SD controlled by pulse period V DD L I SD 10V V GS ( Driver ) I SD ( DUT ) V DS ( DUT ) V DD Body Diode Forward Voltage Drop V SD I FM , Body Diode Forward Current Body Diode Reverse Current I RM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT V DS Driver R G Same Type as DUT V GS  dv/dt controlled by R G SD controlled by pulse period V DD L L I SD 10V V GS ( Driver ) I SD ( DUT ) V DS ( DUT ) V DD Body Diode Forward Voltage Drop V SD I FM , Body Diode Forward Current Body Diode Reverse Current I RM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 6/6Rev.08C TFP50N06