TFP2N60 TAK_CHEONG | Alldatasheet

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Technical content

Features

  • Robust high voltage termination
  • Avalanche energy specified
  • Diode is characterized for use in bridge circuits
  • Source to Drain diode recovery time comparable to a discrete fast recovery diode. 1 = Gate 2 = Drain 3 = Source DEVICE MARKING DIAGRAM ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted ) Symbol Parameter Value Units VDSS Drain- Source Voltage 600 V VGSS Gate-Source Voltage ±30 V ID Drain Current 2.0 A IDM Drain Current Pulsed 8.0 A Power Dissipation (Note 2) 44 W PD Derating factor above 25℃ 0.22 W/ ℃ EAS Single Pulsed Avalanche Energy (Note 1) 120 mJ EAR Repetitive Avalanche Energy (Note 2) 5.4 mJ TJ Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range - 55 to +150 ℃ Notes: 1. L=56mH, IAS=2.0A, VDD=50V, RG=25Ω, Starting TJ=25℃ 2. Repetitive Rating: Pulse width limited by maximum junction temperature. THERMAL CHARACTERISTICS Symbol Parameter Value Unit RθJC Thermal Resistance, Junction-to-Case 1.95 ℃/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 ℃/W TFP2N60 TO-220AB G D S L xxyy TFP XXXX L = Tak Cheong Logo xxyy = Monthly Date Code TFPXXXX = Device Type

Number: DB-180 March 2010, Revision B Page 2 TAK CHEONG SEMICONDUCTOR

ELECTRICAL CHARACTERISTICS

Off Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain-Sounce Breakdown Voltage V GS = 0V, ID = 250uA 600 -- -- V IDSS Zero Gate Voltage Drain Current V DS = 600V, VGS = 0V -- -- 1 uA IGSSF Gate-Body Leakage Current, Forward V GS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse V GS = -30V, VDS = 0V -- -- -100 nA On Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS (th) Gate Threshold Voltage V DS = VGS , ID = 250uA 2.0 -- 4.0 V RDS(ON) On-Resistance V GS = 10V, ID = 1.0A -- 4.0 4.6 Ω Dynamic Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit Ciss Input Capacitance -- 320 380 pF Coss Output Capacitance -- 30 45 pF Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 3 5.6 pF Switching Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-On Delay Time -- 13 30 nS tr Turn-On Rise Time -- 12 60 nS td(off) Turn-Off Delay Time -- 73 100 nS tr Turn-Off Fall Time VDD = 300V, I D = 2.0A, RG = 25Ω (Note 3 & 4) -- 14.3 70 nS Qg Total Gate Charge -- 9.3 13 nC Qgs Gate-Source Charge -- 2.0 -- nC Qgd Gate-Drain Charge VDS = 480V, ID = 2.0A, VGS = 10V Drain-Source Diode Characteristics and Maximum Ratings Symbol Parameter Test Conditions Min. Typ, Max. Unit IS Maximum Continuous Drain-Source Diode Forward Current -- -- 2.0 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 8.0 A VSD Drain-Source Diode Forward Voltage V GS = 0V, IS = 2.0A -- -- 1.4 V Trr Reverse Recovery Time -- 230 -- nS Qrr Reverse Recovery Charge VGS = 0V, IS = 2.0A, dIF / dt = 100A/uS (Note 3) -- 1.0 -- uC Notes: 3. Pulse Test: Pulse width < 300us, Duty cycle ≤ 2%. 4. Basically not affected by working temperature.

Number: DB-180 March 2010, Revision B Page 3 TAK CHEONG SEMICONDUCTOR TYPICAL CHARACTERISTICS

Number: DB-180 March 2010, Revision B Page 4 TAK CHEONG SEMICONDUCTOR

Number: DB-180 March 2010, Revision B Page 5 TAK CHEONG SEMICONDUCTOR

Number: DB-180 March 2010, Revision B Page 6 TAK CHEONG SEMICONDUCTOR TO220AB PACKAGE OUTLINE MILLIMETERS INCHES DIM MIN MAX MIN MAX A 3.60 4.80 0.142 0.189 A1 1.20 1.40 0.047 0.055 A2 2.03 2.90 0.080 0.114 b 0.40 1.00 0.016 0.039 b2 1.20 1.78 0.047 0.070 c 0.36 0.60 0.014 0.024 D 14.22 16.50 0.560 0.650 e 2.34 2.74 0.092 0.108 E 9.70 10.60 0.382 0.417 H1 5.84 6.85 0.230 0.270 L 12.70 14.70 0.500 0.579 L1 2.70 3.30 0.106 0.130 ØP 3.50 4.00 0.138 0.157 Q 2.54 3.40 0.100 0.134 NOTE: Above package outline conforms to JEDEC TO-220AB

Number: DB-100 April 14, 2008 / A DISCLAIMER NOTICE TAK CHEONG NOTICE The information presented in this document is for reference only. Tak Cheong reserves the right to make changes without notice for the specification of the products displayed herein. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controlle rs and other safety devices), Tak Cheong Semiconductor Co., Ltd., or anyone on its behalf, assumes no responsi bility or liability for any damagers resulting from such improper use of sale. This publication supersedes & replaces all information reviously supplied. For additional information, please visit our website http://www.takcheong.com , or consult your nearest Tak Cheong’s sales office for further assistance.