TFK5070D TFUNK | Alldatasheet
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ul ween _ - 7S ELECTRONIC V7E D MM 892005 OO0IbLS 4 MBALGG * TELEFUNKEN electronic TFK 5070 D Cate eee : tn ett | NPN Silicon Darlington Power Transistor 1-33-35 \\ Applications: @ Motor-control (380 V-mains) ; @ UPS (Uninterruptible power supplies) i @ High power SMPS (= 1000 W) | @ Battery chargers \\ @ Welding equipments ‘ @ Inductive heating equipment i Features: 4 - © High reverse voltage @ Base 1 and base 2 connectable { © Short switching times © Triple diffusion technique : @ Very fast C-E-free-wheel diode © Gloss passivation : Case variations : — i CES eee} f (cu: Ca * f a a ° i + TFK6070D ‘TFK 070 DA ‘Terminal connections ' e7eea2 ic By ¥ in sad ono 71.2/1453.0888 E 2802 ~©=s B+ 281 :
‘TELEFUNKEN ELECTRONIC LE D = 8920096 o00%bbb O MBALGG . . TFK 5070 D 1-33-35 | : Dimensions in mm . ‘ AA Lo cad Sa co ee to}, {tl [=E a Th. — . IZA NK 7 EDA ANOH TT ee (THe A he , —_— a re wee Weight max. 30.0 g 282 2803 D-12 a ee :
- TRONIC A7E D MM@ 892005 OG05bb? 2 MMALGG a ‘TFK 5070D { eee - 1-33-35 | Absolute maximum ratings j Collector-emitter voltage Veeo 700 v toy Vees 1000 v i Emitter-base voltage Veo 7 v L Collector current” I 30 A i Collector peak current ex 50 A : Base current |g 4 A 4 Base peak current lows 8 A { Total power dissipation : Teaap™ 25°C Poot 150 w * - Junction temperature y 160 c 3 ‘Storage temperature range Tag —40,..+150 be Insulation voltage vy 2600 v Maximum thermal resistances : Junction case i Power transistor Ruse 0.83 Kw , Free-wheel diode Ruue 18 Kw : Characteristics Min. Typ. Max. ‘ Traya™ 28 °C, unless otherwise specified : . Collector cut-off current ; Vega 1000 V, R= 270 0, R= 1002 een 0.4 mA Veen #1000 V, R= 270,R,= 100 een 0.6 mA Toyug = 100°C . Veen = 1000 V, R, = 270 0, R, = 1002 leen 3.0 mA : Veen = 1000V, R= 270,R,= 100 lecn 6.0 mA Emitter cut-off current + Vegm BV Ty Th leeo 1.0 mA Collector-emitter breakdown voltage . [gm 780 mA, L= 125 mH Vigniczo 700 v [gmt mA, R= 2700, R, =1009 Veeaycen 1000 v 2 Emitter-base breakdown voltage i [p= 5 mA Ty Tp Vianieso 7 v Collector saturation voltage [qm 2B A, fy 1.5 A, Toayg = 100°C Veceat 25 V [p= 1B A, fy = 0.5 A, Toayg 125 °C Vecsat 22 V ; DC forward current transfer ratio : Veg 2 Vi [p= 25 A. Pee 7 2804 p-13 283
TELEFUNKEN ELECTRONIC L7E D MM 89200%b OOOFLES 4 MALGG TFK 5070D . | . 7-33-35 Min, Typ. Max. i . Collector-emitter working voltage = Heyatt™ 30 Algy = 1.4.4, L= 12 yH . . “Vgg™ 7 Vs Fog =0.6 Q, Vz = 50V Veew «700 vo4 * Forward voltage of the diode , [pm 25A % wove Switching characteristics . | Inductive toad, 7,.,,= 100°C : [pm 25 A, lpg 1.5 A, L=0.6 MH, Vaggg™ 700 V i - =Vgp "7 V, Fog = 0.8 Q, Vq = 300 V ‘ . Storage time t, 70 ys! Fall time a 06 us t { Se eed i Sececsassaaaseaeeees , SSiiSccimasieera FREE EERE EEE EEEEREEE ; A ETE EE MEH A FREER EEE Ghee FEE here NIL gL HUTT CT NT Ter TT RD AP SRR EEN ttf EEE ERHEEE EEE Eee Cer CCW) oor LLL TT ETN Tres oon lI Tey - 1 10 100 1000V O04 08 12 16V Ye yo 284 2805 D-14
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TELEFUNKEN ELECTRONIC 17E D MM 8592005 0009672 & MMALGG . i TFK 5070D 7-33-35 . | | FF ah ontsaurstin Seer : A { rosters Vee Ae eee et Pe a . ae i ements sori sv Te=25% —= TTT | - Cel fee ctoore ——— FEE eras tS LUM Eri et SSS! Pe 26 eo ot | a { ooo an - | PT \\
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TELEFUNKEN ELECTRONIC L7E D MM 892005 00059380 4 MALGG , © Fomily of curves _ . T1-20 Besides the static (d. c.) and dynamio(a.c.) charac- ae i teristics, family of curves are given for specified Eo AE G CORP ; operating conditions. They show the typical inter- Mentiticaton tabat | depedence of individual characteristics. Partly are Le © | given the scattering limits. They signify that at least ‘oe yt 95% of the delivery lies inside these tolerances. Nee SZ. ' Tio tod aan | - 6.8, Additional informations te i Preliminary specifications i : This heading indicates that some information on _F1- 7-1. Dimensions of ree! in mm ; the device concerned may besubjecttoslight chan- ose | Not for new developments a QQQAd | This heading indicates that the device concerned SOS S/o ln - should not be used in equipment under develop- RNS ment, it is, however, available for present produc- TS : tion, ores 00 H . . meSS i 7. Taping and reeling \\7 i laa ow ne 7A. Taping of TO-92 transistors | . Standard reoling: Teped on reel, reeled together —_F'9+ 7.2. Dimension of box for Zigzag folding i with a paper film. \\ 7.A.1, Order Numbers i ‘Add the taping~code to the order number. i ete . Of : Bc238C DU 06 'Z : Order-No. of Type ‘ ( \\ (N\\ 7 t Code for TO-92 Transistors ae i : Orientation of transistor on tape " acon Se so i Additional marking for spectals 283 a =e .. + 1106 = View on flat side of transistor, view on : gummed tape Fig. 7.3. Dimensions of tape in mm * + 05 View on round side of transistor, view on : gummed tape 7.1.2 Quantity of devices i 2) Additional marking “O" : 1000 devices per reel j Taping without paper film 2000 devices per folded tape in special box. Additional marking "2"; i Zigzag folded tape inspecial 72 Teped transistors in SOT 23 and i box. Marking for orientation 43 case j of transistor not necessary, @)_ Standard taping { because box can be opened Designation is attached with code GS 08 in 4 ‘on top or botton. case of standard taping. Example for normal 1 Example for order No.: BC237C DUZ eeian transistors ‘as standard taped: BF 569- : Example for R-version transistors as standard taped: BF 569 R-GS 08. In case of standard taping, the transistor orienta- 2517 £-06 A27 i
L7E D M@ 89200596 0009381 b MALGG “Gye «rn macs 7-41-20. ara Fa 5 A TELEFUNKEN ELECTRONIC . s q b q ps] tot Fa] 1 tr] ' ex ao : Fig. 7.4 Standard taped SOT 23 Fig. 7.6 Reverse taped SOT 23 i : : speemnn ercton “ i de -ronng seeton = = 1 ion (4 tae ‘ ; d ~ es “ 4 . 715 ray aj 8 A H @ O Ole fikdakas ae al 2 . Fig. 7.5 Standard taped SOT 143 Fig. 7.7 Dimensions of tape in mm ' b) Reverse taping I Desigantionis attached with codeGSO7 incase wae i of reverse taping. Example for normal version a art ; transistors as reverse taped: BF 569 R-GS 07. g@ 5 Example for R-version transistors as reverseta- 4 | =e" i . ping: BF 569 R-GS 07. ~ ; Incase of reverse taping, the transistor orientation es oe 5 oY : on the tape is shown in Fig. 6. SS i Regarding MOF-FET and MES-FET devices, reverse \\ A S taping is at present not available. . = e : . Fig. 7.8 Dimensions of reel in mm
7.2.2 Quantity of devices
- Assessories 3000 devices per reel : Number Fig. _ Designation For case . 119880 8.1. _Isolating washer thickness 60 pm 1243 DIN 41869 . JEDEC TO 126 (SOT 32) . 564542 8.2. _Isoleting washer thickness 50 um 14A3 DIN 41869 . - JEDEC TO 220 (SOT 78) . 912884 8.3 _ Isolating washer thickness 50 um 15A3 DIN 41869 ; (TOP3) for clip mounting : 191131 8.4 _ Isolating washer thickness 50 ym 18A3 DIN 41869 {(TOP3) for screw mounting . 191140 85 — Mounting clip 16A3DIN 41869 (TOP3) 869524 88 Isolating washer thickness 100 pm+50ym 382 DIN 41872 JEDECTO 3 Devices with high reverse voltage : A28 2518 E-07 i