TFD312S

TFD312S SANKEN | Alldatasheet

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n Absolute Maximum Ratings n Electrical Characteristics ]VDRM ]VBO Parameter Symbol Ratings Unit Conditions V 50Hz Half-cycle sinewave, 180°, Continuous current, Tc=92°C 50Hz Half-cycle sinewave, Peak value, Non-repetitive, Tj=125°C 50Hz Sine wave, RMS, Terminal to case, 1min. (Tj=25°C, unless otherwise specified) A A V V W W V VDRM IT (RMS) ITSM VFGM VRGM PGM PG (AV) Tj Tstg VISO 4.7 1.5 5.0 5.0 0.5 –40 to +125 –10 to +125 1500 Tj=–10 to +125°C, RGK=1kΩ AIT(AV) 3.0 2ms t 10ms f 50Hz, duty 10% f 50Hz, duty 10% f 50Hz A2 • secI2t 18 V mA V V mA V mA V/mS °C/W Parameter Symbol Ratings typmin max Unit Conditions mA m AIDRM VBO VTM IBO VGT IGT VGT IH dv/dt Rth 1.0 5.0 0.1 0.2 0.2 15 1.4 100 1.0 Rank Ratings Tj=125°C, VD=VDRM, RGK=1kΩ Tj=25°C, VD=VDRM, RGK=1kΩ ITM=5A VD=6V, RL=10Ω VD=VDRM, Tj=125°C, RGK=1kΩ Junction to case VD=VDRM, Tj=125°C, RGK=1kΩ , CGK=0.033µF RGK=1kΩ , Tj=125°C n Features l With built-in Avalanche diode l Average on-state current: IT(AV)=3A l Gate trigger current: IGT=10mA max l Isolation voltage: VISO=1500V(50Hz AC, RMS, 1min.) A K G Reg. Input TFD312S Application example min typ max 100 110 115 125 135 140 150 160 163 175 187 185 200 215 210 225 240 Rank Ratings 100 120 145 170 190 16.9–0.3 8.4–0.2 0.8–0.23.9–0.2 4.0–0.2 10.0–0.2 4.2–0.2 1.35–0.15 1.35–0.15 2.4–0.2 2.2–0.2 f3.3–0.2 0.85+0.2 –0.1 +0.2 –0.1 C 0.52.8 13.0min 2.542.54 0.45 TFD312S series TO-220F 3A Thyristor with built-in Avalanche diode Weight: Approx. 2.1g External Dimensions (Unit: mm) (1). Cathode(K) (2). Anode (A) (3). Gate (G) a. Part Number b. Lot Number (1) (2) (3) a b Repetitive peak off-state voltage Average on-state current RMS on-state current Surge on-state current Squared rated current and time product Peak forward gate voltage Peak reverse gate voltage Peak gate power loss Average gate power loss Junction temperature Storage temperature Isolation voltage Off-state current Breakover voltage Breakover current On-state voltage Gate trigger voltage Gate trigger current Gate non-trigger voltage Holding current Critical rate-of-rise of off-state voltage Thermal resistance Load Overvoltage detection Overcurrent detection

Tj=125°C Tj=25°C 0.3 0.5 100 1.0 2.0 4.0 3.0 On-state voltage vT (V) On-state current iT (A) vT – iT Characteristics (max) Gate current iGF (A) 012 3 Gate voltage vGF (V) Gate Characteristics 100 Number of cycle Surge on-state current ITSM (A) ITSM Ratings 1 5 10 50 100 Gate trigger current IGT (mA) Gate trigger voltage VGT (V) 10 20 See graph at the upper right 120 180 ° DC q=30 15 234 6 Average on-state current IT(AV) (A) IT(AV) –PT(AV) Characteristics Half wave, single phase 100 150 125 3625 41 Average on-state current IT(AV) (A) IT(AV) –Tc Ratings 60° 90° 120° 180° DC q=30° Half wave, single phase Tj =–40 °C 0°C 25°C 50°C 75°C 100°C 125°C 11 0 1 0 2 103 0.5 1.0 2.0 1.5 0.5 0.5 1 10 10 2 103 0.2 0.5 –40 0 75 100 125 25 50 0.8 0.6 0.4 0.2 1.0 –40 0 75 100 125 25 50 0°C 25°C 50°C 75°C 100°C 125°C –40 0 75 125 10025 50 11 0 1 0 2 103 1040.1 0.5 Average on-state power PT(AV) (W) Case temperature TC (°C) (RGK=1kΩ ) (VD=6V, RL=10Ω ) (VD=6V, RL=10Ω ) TFD312S series 1 cycle 10 ms TSMI Tj=125°C Initial junction temperature Tj=–40 °C Tj=25°C Tj=–20 °C q : Conduction angle 180°0° q q : Conduction angle 180°0° q Pulse width tw (ms) Pulse trigger temperature Characteristics vgt (Typical) vgt VGT DC gate trigger voltage at 25°C( )( ) Gate trigger voltage at Ta and tw –20°C vgt tw Pulse width tw (ms) Pulse trigger temperature Characteristics igt (Typical) igt IGT DC gate trigger current at 25°C( )( ) Gate trigger current at Ta and tw Tj =–40 °C igt tw –20°C Junction temperature Tj (°C) Holding current IH (mA) IH temperature Characteristics (Typical) Junction temperature Tj (°C) Gate trigger voltage VGT (V) VGT temperature Characteristics (Typical) Junction temperature Tj (°C) Gate trigger current IGT (mA) IGT temperature Characteristics (Typical) t, Time (ms) Transient thermal resistance rth (°C/W) Transient thermal resistance Characteristics (Junction to case)