TF861M

TF821M SANKEN | Alldatasheet

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l Repetitive peak off-state voltage: VDRM=200, 400, 600V l Average on-state current: IT(AV)=8A l Gate trigger current: IGT=15mA max n Absolute Maximum Ratings n Electrical Characteristics Parameter Symbol Ratings Unit Conditions V Tj= –40 to +125°C, RGK =1kΩ 50Hz Half-cycle sinewave, Continuous current, Tc=83°C 50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125 °C 200 TF821M TF841M TF861M 600 200 600 300 700 300 700 400 V V V A A A A V V W W VDRM VRRM VDSM VRSM IT(AV) IT(RMS) ITSM IFGM VFGM VRGM PGM PG(AV) Tj Tstg 400 500 500 8.0 12.6 120 2.0 5.0 5.0 0.5 –40 to +125 –40 to +125 V V mA V mA V/mS mS °C/W Parameter Symbol Ratings typmin max Unit Conditions mA mA IDRM VTM IGT tq IRRM VGT VGD IH dv/dt Rth 5.0 4.0 2.7 0.1 1.4 1.5 2.0 2.0 Tj=125 °C, VD=VDRM(VRRM), RGK=1kΩ TC=25°C, ITM=15A VD=6V, RL=10Ω , TC=25°C RGK=1kΩ , Tj=25°C Junction to case Tc=25 °C VD=1/2· VDRM, Tj=125°C, RGK=1kΩ , CGK=0.033µF VD=1/2· VDRM, Tj=125°C, RGK=1kΩ TF821M, TF841M, TF861M TO-220 8A Thyristor 1.7–0.2 3.0–0.2 8.8–0.2 f3.75–0.1 1.35–0.15 2.5–0.12.5–0.1 +0.2–0.10.65 10.4max 16.7max 5.0max 2.1max 12.0 min 4.0max Weight: Approx. 2.6g External Dimensions (Unit: mm) (1). Cathode(K) (2). Anode (A) (3). Gate (G) (1) (2) (3) a. Part Number b. Lot Number a b Repetitive peak off-state voltage Repetitive peak reverse voltage Non-repetitive peak off-state voltage Non-repetitive peak reverse voltage Average on-state current RMS on-state current Surge on-state current Peak forward gate current Peak forward gate voltage Peak reverse gate voltage Peak gate power loss Average gate power loss Junction temperature Storage temperature Off-state current Reverse current On-state voltage Gate trigger voltage Gate trigger current Gate non-trigger voltage Holding current Critical rate-of-rise of off-state voltage Turn-off time Thermal resistance f 50Hz f 50Hz, duty 10% f 50Hz, duty 10%

0.3 0.5 100 1.0 2.0 4.0 3.0 On-state voltage vT (V) On-state current iT (A) vT – iT Characteristics (max) Tj=125 Tj=25 100 120 140 Number of cycle Surge on-state current ITSM (A) ITSM Ratings 1 5 10 50 100 Gate current iGF (A) 0123 Gate voltage vGF (V) Gate Characteristics P GM=5W Gate trigger current IGT (mA) Gate trigger voltage VGT (V) 10 20 30 Tc=25°C Tc=–40°C Tc=–20°C 1 cycle 10 ms TSMI 21 0 1 2 641 4 8 Average on-state current IT(AV) (A) IT(AV) –PT(AV) Characteristics ° 90 ° 120 ° 150 180 DC q=30 100 150 125 10 12 14 168642 Average on-state current IT(AV) (A) IT(AV) –Tc Ratings 60° 90° 150° 120° 180° DC q=30° –40 0 75 100 25 50 125 11 0 1 0 2 103 104 0.1 25°C 75°C 125°C TC=–40 °C 25°C 75°C 125°C 11 0 1 0 2 103 104 0.1 0.50.5 11 0 1 0 2 103 104 0.1 –40 0 75 100 25 50 125 0.8 0.6 0.4 0.2 1.0 –40 0 75 100 25 50 125 Average on-state power PT(AV) (W) Case temperature TC (°C) (RGK=1kΩ ) (VD=6V, RL=10Ω ) (VD=6V, RL=10Ω ) TF821M, TF841M, TF861M Tj=125°C Initial junction temperature See graph at the upper right 50Hz Half-cycle sinewave q : Conduction angle 180°0° q 50Hz Half-cycle sinewave q: Conduction angle q 180°0° Pulse width tw (ms) Pulse trigger temperature Characteristics vgt (Typical) vgt VGT DC gate trigger voltage at 25°C( )( ) Gate trigger voltage at Ta and tw TC=–40 °C –20°C vgt 50% tw Pulse width tw (ms) Pulse trigger temperature Characteristics igt (Typical) igt IGT DC gate trigger current at 25°C( )( ) Gate trigger current at Ta and tw –20°C igt tw 50% Case temperature Tc (°C) Holding current IH (mA) IH temperature Characteristics (Typical) Junction temperature Tj (°C) Gate trigger voltage VGT (V) VGT temperature Characteristics (Typical) Junction temperature Tj (°C) Gate trigger current IGT (mA) IGT temperature Characteristics (Typical) t, Time (ms) Transient thermal resistance rth (°C/W) Transient thermal resistance Characteristics (Junction to case)