TF809-1200-16-20 GREEGOO | Alldatasheet

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High Power Semiconductor Devices Greegoo Electric 5.2008 http://www.greegoo.com 1-21 Fast Switching Thyristor Key Parameters Voltage Ratings V DRM 1600 V I T(AV) A I TSM kA V TO V 1200-16 T j =125 °C r T mΩ 1200-18 150 mA 1200-20 T j = 25 °C 5 mA V DM = V DRM Applications V RM = V RRM M.F. Inductive heating systems tp = 10 ms DC choppers Pulse electrical power supplies V DSM = V DRM V RSM = V RRM Features Outline Double-side cooling Low switching loss Shorter turn-off time Thermal & Mechanical Data Min Type R jc Thermal Resistance Junction to Case R cs Thermal Resistance Case ro Heatsink T j Junction Temperature -40 - T stg Storage Temperature -40 - F Mounting Force - 22 - 0.47 Current Ratings Min Type Max Unit I T(AV) Mean On-State Current Half Sine Wave, TC=55 oC - 1205 A I T(AV) Mean On-State Current Half Sine Wave, TC=70 oC - 1018 A I T(RMS) RMS On-State Current TC =70 oC - 1600 A I TSM Surge (non-repetitive) On-State Current 10ms, Half Sine Wave, TC =125 oC, VR = 0 - 15 kA I 2t Limiting load integral Sine Wave, 10ms - 113 104A2s 1.38 0.385 Device Type1205 ~ 2000 I DRM = I RRM ≤ m Weight - - - Symb. Parameter Test Conditions I DRM = I RRM ≤ 2000 1600 1800 VDRM/VRRM(V) kN 150 kg Max Unit - - 0.020 K / W K / W 125 °C Symb. Parameter Test Conditions 0.005 TF809 TF809 TF809 TF80 1200-1-20

Greegoo Electric 5.2008 http://www.greegoo.com High Power Semiconductor Devices 1-22 Fast Switching Thyristor TF80 1200-1-20 Characteristics Min Type Max Unit Tj = 125 °C, I TM = 2000 A - - 2.15 V T j = 125 °C - - 1.38 V T j = 125 °C - - 0.385 mΩ T j = 25 °C, I G = 2 A, I TM = 50 A, V D = 12 V - - 300 mA T j = 25 °C, I G = 2 A, V D = 12 V - - 1000 mA Dynamic Parameters Min Type Max Unit 500 1000 - V/us dv/dt = 20 V/µs, VR ≥ 50 V, -di/dt = 60 A/µs, IT = 1000 A Gate Parameters Min Type Max Unit 40 - 180 mA 0.8 - 3 V 0.2 - - V - - 16 V - - 5 V - - 4 A - - 20 W - - 4 W - - 3 us T j = 25 °C, V DM = 50% V DRM, f = 1 Hz, I TM = 2000 A, I FG = 2.0 A, tr = 0.5 µs, di/dt = 60 A/µst gt Turn-on time uC T j = 125 °C, V DRM/V RRM Test Conditions 150 mA- Test Conditions T j = 125 °C T j = 125 °C Peak forward gate voltage Peak reverse gate voltage T j = 125 °C, V D = 0.4V DRM Gate trigger current Symb. Test Conditions Forward leakage current Fig2. Maximum Thermal Impedance Vs. Time V RGM I FGM I GT V GT V GD V FGM T j = 25 °C，V D = 12V，R L = 6Ω T j = 25 °C，V D = 12V，R L = 6Ω Fig1. Peak On-state Voltage Vs. Peak On-state Current Gate power losses (mean) Peak forward gate current Gate power losses T j = 125 °C T j = 125 °C P G(AV) P GM T j = 125 °C Latching current Gate non-trigger voltage Turn-off time Critical rate of rise of off-state voltage Critical rate of rise of on-state current Gate trigger voltage Parameter Parameter Recovery Charge Slope resistance Holding current Reverse leakage current Symb. Parameter Threshold voltage V TM I DRM I RRM Peak on-state voltage Symb. V TO r T I H I L T j = 125 °C, tp = 1000 µs, V DM = 67% V DRM, f = 1 Hz， T j = 125 °C, -di /dt = 60 A/µs, tp = 1000 µs, I T = 1000 A, t q 860 -Q rr -V R = 50 V, trapezoid wave di /dt dv /dt T j = 125 °C, V DM = 50% V DRM, f = 1 Hz, t = 5 s, us- - 1000 A/usI TM = 2000 A, I FG = 2.0 A, tr = 0.5 µs T j = 125 °C, 67%V DRM Peak On-state Voltage Vs. Peak On-state Current 1.3 1.8 2.3 2.8 3.3 3.8 4.3 4.8 5.3 100 1000 10000 I TM / A V TM / V Maximum Thermal Impedance Vs. Time 0.000 0.004 0.008 0.012 0.016 0.020 0.001 0.01 0.1 1 10 100 t / s Z t / K / W Tj=125℃

High Power Semiconductor Devices Greegoo Electric 5.2008 http://www.greegoo.com 1-2 Fast Switching Thyristor TF80 1200-1-20 Fig5. Surge Current Vs. Cycles Fig6. I2 t Vs. Time Fig3. Total Recovered Charge Vs. Commutation Rate Fig4. Sine Wave Frequency Ratings Total Recovered Charge 100 1000 10000 10 100 1000 -di/dt / A/µs Qrr / µC Sine Wave Energy per pulse 1500A Tj = 125 oC 5000A 1.00E-02 1.00E-01 1.00E+00 1.00E+01 1.00E+02 1.00E-05 1.00E-04 1.00E-03 1.00E-02 Pulse Width / s Energy Pulse / J Surge Current Vs. Cycles 1 10 100 n / @50 Hz I TSM / ×103 A I 2t Vs. Time 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1 10 t / ms I 2t / ×106A2s Tj=125℃ 2000A 1500A 1000A 500A 3000A 2000A 1000A 500A

Greegoo Electric 5.2008 http://www.greegoo.com High Power Semiconductor Devices 1-2 Fast Switching Thyristor TF80 1200-1-20 Fig8. VGT Vs. IGT Fig9. Gate Trigger Area at various Temperature Fig7. Recommended gate current waveform A is Recommended Triggering Area. B is Unreliable Triggering Area. C is Recommended Gate Load Line. V GT Vs. I GT 0 1 2 3 4 I GT / A V GT / V A B Gate Trigger Area at various Temperature 0 100 200 300 400 500 I GT / mA V GT / V T j=25°C T j= - 40°C T j=125° C IGM ≈2~5A IG ≥1.5IGT diG/dt ≥4A/us tr ≤1us tp(IGM) ≈10~20us