TF521M

TF521M SANKEN | Alldatasheet

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l Repetitive peak off-state voltage: VDRM=200, 400, 600V l Average on-state current: IT(AV)=5A l Gate trigger current: IGT=15mA max n Absolute Maximum Ratings n Electrical Characteristics Parameter Symbol Ratings Unit Conditions V Tj= –40 to +125°C, RGK =1kΩ 50Hz Half-cycle sinewave, Continuous current, Tc=96°C 50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125 °C 200 TF521M TF541M TF561M 600 200 600 300 700 300 700 400 V V V A A A A V V W W VDRM VRRM VDSM VRSM IT(AV) IT(RMS) ITSM IFGM VFGM VRGM PGM PG(AV) Tj Tstg 400 500 500 5.0 7.8 2.0 5.0 5.0 0.5 –40 to +125 –40 to +125 V V mA V mA V/mS mS °C/W Parameter Symbol Ratings typmin max Unit Conditions mA mA IDRM VTM IGT tq IRRM VGT VGD IH dv/dt Rth 3.0 4.0 3.0 0.1 1.4 1.5 2.0 2.0 Tj=125 °C, VD=VDRM(VRRM), RGK=1kΩ TC=25°C, ITM=10A VD=6V, RL=10Ω , TC=25°C RGK=1kΩ , Tj=25°C Junction to case Tc=25 °C VD=1/2· VDRM, Tj=125°C, RGK=1kΩ , CGK=0.033µF VD=1/2· VDRM, Tj=125°C, RGK=1kΩ 1.7–0.2 3.0–0.2 8.8–0.2 f3.75–0.1 1.35–0.15 2.5–0.12.5–0.1 +0.2 –0.10.65 10.4max 16.7max 5.0max 2.1max 12.0 min 4.0max TF521M, TF541M, TF561M TO-220 5A Thyristor Weight: Approx. 2.6g External Dimensions (Unit: mm) (1). Cathode(K) (2). Anode (A) (3). Gate (G) (1) (2) (3) a. Part Number b. Lot Number a b Repetitive peak off-state voltage Repetitive peak reverse voltage Non-repetitive peak off-state voltage Non-repetitive peak reverse voltage Average on-state current RMS on-state current Surge on-state current Peak forward gate current Peak forward gate voltage Peak reverse gate voltage Peak gate power loss Average gate power loss Junction temperature Storage temperature f 50Hz f 50Hz, duty 10% f 50Hz, duty 10% Off-state current Reverse current On-state voltage Gate trigger voltage Gate trigger current Gate non-trigger voltage Holding current Critical rate-of-rise of off-state voltage Turn-off time Thermal resistance

0.3 0.5 100 1.0 2.0 4.0 3.0 On-state voltage vT (V) On-state current iT (A) vT – iT Characteristics (max) 100 Number of cycle Surge on-state current ITSM (A) ITSM Ratings 1 5 10 50 100 Gate current iGF (A) 0123 Gate voltage vGF (V) Gate Characteristics 10 20 30 1 cycle 10 ms ITSM 26 48 Average on-state current IT(AV) (A) IT(AV) –PT(AV) Characteristics 120 ° 150 180 DC 100 150 125 6842 Average on-state current IT(AV) (A) IT(AV) –Tc Ratings 60° 90° 150° 120° 180° DC 25°C 75°C 125°C igt tw 50% –20°C 25°C 75°C 125°C 11 0 1 0 2 103 104 Pulse width tw (ms) 0.05 0.1 0.50.5 11 0 1 0 2 103 104 Pulse width tw (ms) 0.05 0.1 –40 0 50 75 100 25 125 Junction temperature Tj (°C) Holding current IH (mA) IH temperature Characteristics (Typical) 11 0 1 0 2 103 104 t, Time (ms) 0.1 –40 0 50 75 100 25 125 0.8 0.6 0.4 0.2 1.0 Junction temperature Tj (°C) –40 0 75 100 25 50 125 Junction temperature Tj (°C) Average on-state power PT(AV) (W) Case temperature TC (°C) (RGK=1kΩ ) (VD=6V, RL=10Ω ) (VD=6V, RL=10Ω ) TF521M, TF541M, TF561M Tj =125°C Tj=25 °C Tj=125°C Initial junction temperature See graph at the upper right P GM =5W Gate trigger current IGT (mA) Gate trigger voltage VGT (V) Tj=–40°C Tj=25°C Tj=–20°C 50Hz Half-cycle sinewave q : Conduction angle 180°0° q q=30 50Hz Half-cycle sinewave q: Conduction angle q180° 0° q=30° Pulse trigger temperature Characteristics vgt (Typical) vgt VGT DC gate trigger voltage at 25°C( )( ) Gate trigger voltage at Ta and tw TC=–40 °C vgt 50% tw –20°C Pulse trigger temperature Characteristics igt (Typical) igt IGT DC gate trigger current at 25°C( )( ) Gate trigger current at Ta and tw TC=–40 °C Gate trigger voltage VGT (V) VGT temperature Characteristics (Typical) Gate trigger current IGT (mA) IGT temperature Characteristics (Typical) Transient thermal resistance rth (°C/W) Transient thermal resistance Characteristics (Junction to case)