TF414 ONSEMI | Alldatasheet
Document overview
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Technical content
Features
Small IGSS : max 500pA (VGS= 20V, VDS=0V) Small Ciss : typ 0.7pF (VDS=10V, VGS=0V, f=1MHz) Ultrasmall package facilitates miniaturization in end products Halogen free compliance
Applications
Impedance conversion, infrared sensor applications Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Value Unit Drain to Source Voltage VDSS 40 V Gate to Drain Voltage VGDS 40 V Gate Current IG 10 mA Drain Current ID 1m A Power Dissipation PD 100 mW Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Device Package Shipping TF414T5G Pb-free and Halogen Free SOT-883 8,000 pcs. / reel Electrical Characteristics at Ta 25C Parameter Symbol Conditions Value Unit min typ max Gate to Drain Breakdown Voltage V(BR)GDS IG = 10μA, VDS=0V 40 V Gate to Source Leakage Current IGSS VGS = 20V, VDS=0V 500 pA Cutoff Voltage VGS(off) V DS = 10V, ID = 1μA 1.4 4.0 V Drain Current IDSS V DS = 10V, VGS = 0V 50 130 A Forward Transfer Admittance | yfs | VDS = 10V, VGS=0V, f = 1kHz 0.05 0.11 mS Input Capacitance Ciss VDS = 10V, VGS = 0V, f = 1MHz 0.7 pF Reverse Transfer Capacitance Crss 0.3 pF N-Channel JFET 40V, 50 to 130A, 0.11mS, SOT-883 1 : Source 2 : Drain 3 : Gate Top view1 2 SOT-883 3 1 A4 M M = Date Code Marking Electrical Connection Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Oper ating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Ordering & Package Information
No.A2259-2/3 ID -- VDS ID -- VDS Drain-to-Source V oltage, VDS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- μA Drain Current, ID -- μA ID -- VGS Gate-to-Source V oltage, VGS -- V Drain Current, ID -- μA VGS(off) -- IDSS Drain Current, IDSS -- μA Cutoff V oltage, VGS(off) -- V IT16761 012345 100 120 VGS=0V --0.4V --0.6V --0.8V --1.0V VGS=0V --0.2V --0.4V IT16762 0 5 10 15 20 25 30 100 120 --0.2V --0.6V --0.8V --1.0V IT16764 100 120 75°C VDS=10V 25°CTa= --25 HD131113 40 140 8060 100 120 --2.2 --0.4 --1.6 --1.8 --2.0 --1.0 --0.8 --1.4 VDS=10V ID=1.0μA Crss -- VDS Drain-to-Source V oltage, VDS -- V Reverse Transfer Capacitance, Crss -- pF IT16768 23 5 7 20.1 1.0 35 7 2 10 35 7 100 1.0 0.1 VGS=0V f=1MHz | yfs | -- IDSS Drain Current, IDSS -- μA Forward Transfer Admittance, | yfs | -- mS HD131113 60 80 10040 120 140 0.14 0.06 0.11 0.12 0.13 0.08 0.07 0.09 0.10 Ciss -- VDS Drain-to-Source V oltage, VDS -- V Input Capacitance, Ciss -- pF IT16767 23 5 7 20.1 1.0 35 7 2 10 35 7 100 1.0 0.1 VGS=0V f=1MHzVDS=10V VGS=0V f=1kHz HD131212 PD -- Ta Allowable Power Dissipation, PD -- mW Ambient Temperature, Ta -- °C 120 100 20 40 60 80 100 120 140 1600
PS No.A2259-3/3 Package Dimensions unit : mm ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequentia l or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s techn ical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC productsfor any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, anddistributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture oft h e part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. SOT-883 (XDFN3), 1.0x0.6, 0.35P CASE 506CB ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. EXPOSED COPPER ALLOWED AS SHOWN. A B E D BOTTOM VIEW b 0.10 C TOP VIEW0.10 C A 0.10 C 0.10 C C SEATING PLANESIDE VIEW DIM MIN MAX MILLIMETERS A 0.340 0.440 A1 0.000 0.030 b 0.075 0.200 D2 0.620 BSC e 0.350 BSC L 0.170 0.300 SOLDER FOOTPRINT* DIMENSIONS: MILLIMETERS 1.10 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. GENERIC MARKING DIAGRAM* *This information is generic. Please refer to device data sheet for actual part XX = Specific Device Code M = Date Code XX M L 0.43 RECOMMENDED D 0.950 1.075 E 0.550 0.675 E2 0.425 0.550 AM0.10 B C M0.05 C e e/2 2X 3X 0.41 0.55