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Document overview

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Technical content

Features

 Small IGSS : max 1.0nA (VGS= 20V, VDS=0V)  Small Ciss : typ 4pF (VDS=10V, VGS=0V, f=1MHz)  Ultrasmall package facilitates miniaturization in end products  Halogen free compliance

Applications

 Low-Frequency general-purpose amplifier, impedance conversion, infrared sensor applications Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Value Unit Drain-to-Source Voltage V DSX 30 V Gate-to-Drain Voltage V GDS 30 V Gate Current I G 10 mA Drain Current I D 10 mA Power Dissipation P D 100 mW Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Device Package Shipping TF412ST5G Pb-free and Halogen Free SOT-883 8,000 pcs. / reel Electrical Characteristics at Ta  25C Parameter Symbol Conditions Value Unit min typ max Gate-to-Drain Breakdown Voltage V (BR)GDS IG = 10μA, VDS=0V 30 V Gate-to-Source Leakage Current I GSS VGS = 20V, VDS=0V 1.0 nA Cutoff Voltage V GS(off) V DS = 10V, ID = 1μA 0.18 0.80 1.5 V Drain Current I DSS V DS = 10V, VGS = 0V 1.2 3.0 mA Forward Transfer Admittance | yfs | V DS = 10V, VGS=0V, f = 1kHz 3.0 5.0 mS Input Capacitance Ciss VDS = 10V, VGS = 0V, f = 1MHz 4 pF Reverse Transfer Capacitance Crss 1.1 pF N-Channel JFET 30V, 1.2 to 3.0mA, 5.0mS, SOT-883 Electrical Connection 1 : Source 2 : Drain 3 : Gate Top view1 2 Marking A2 M M = Date CodeSOT-883 3 1 Ordering & Package Information Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product per formance may not be indicated by the Electrical Characteristics if operated under different conditions.

No.A2300-2/4 ID -- VDS ID -- VDS Drain-to-Source V oltage, VDS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- mA Drain Current, ID -- mA ID -- VGS ID -- VGS Gate-to-Source V oltage, VGS -- V Drain Current, ID -- mA Gate-to-Source V oltage, VGS -- V Drain Current, ID -- mA IT16770 012345 1.0 0.5 1.5 2.0 2.5 3.0 VGS=0V --0.2V --0.3V --0.4V VGS=0V --0.1V --0.2V IT16771 0 5 10 15 20 25 30 1.0 2.0 1.5 0.5 2.5 3.0 --0.1V --0.3V --0.4V HD 131113 IT16773 3.5 3.0 2.5 2.0 1.5 1.0 0.5 2.0mA IDSS =3.0mA 2.5 2.0 1.5 0.5 1.0 3.0 3.5 --25 VDS=10V 25°C Ta=75 VDS=10V Crss -- VDS Drain-to-Source V oltage, VDS -- V Reverse Transfer Capacitance, Crss -- pF Ciss -- VDS Drain-to-Source V oltage, VDS -- V Input Capacitance, Ciss -- pF 23 5 7 20.1 1.0 35 7 2 10 35 7 100 1.0 0.1 IT16777 VGS=0V f=1MHz IT16776 23 5 7 20.1 1.0 35 7 2 10 35 7 100 1.0 VGS=0V f=1MHz | yfs | -- IDSS Drain Current, IDSS -- mA Forward Transfer Admittance, | yfs | -- mS VGS(off) -- IDSS Drain Current, IDSS -- mA Cutoff V oltage, VGS(off) -- V HD131113 --0.4 --0.2 --1.2 --1.4 --0.8 --0.6 --1.0 VDS=10V ID=1.0μA HD131113 VDS=10V VGS=0V f=1kHz

No.A2300-3/4 HD131212 PD -- Ta Allowable Power Dissipation, PD -- mW Ambient Temperature, Ta -- °C 120 100 20 40 60 80 100 120 140 1600

PS No.A2300-4/4 Package Dimensions TF412ST5G unit : mm SOT-883 (XDFN3), 1.0x0.6, 0.35P CASE 506CB ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. EXPOSED COPPER ALLOWED AS SHOWN. A B E D BOTTOM VIEW b 0.10 C TOP VIEW0.10 C A 0.10 C 0.10 C C SEATING PLANESIDE VIEW DIM MIN MAX MILLIMETERS A 0.340 0.440 A1 0.000 0.030 b 0.075 0.200 D2 0.620 BSC e 0.350 BSC L 0.170 0.300 SOLDER FOOTPRINT* DIMENSIONS: MILLIMETERS 1.10 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. GENERIC MARKING DIAGRAM* *This information is generic. Please refer to device data sheet for actual part XX = Specific Device Code M = Date Code XX M L 0.43 RECOMMENDED D 0.950 1.075 E 0.550 0.675 E2 0.425 0.550 AM0.10 B C M0.05 C e e/2 2X 3X 0.41 0.55

0.20 EGAKCAPX2

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