TF412 ONSEMI | Alldatasheet
Document overview
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Technical content
Features
Small IGSS : max 1.0nA (VGS= 20V, VDS=0V) Small Ciss : typ 4pF (VDS=10V, VGS=0V, f=1MHz) Ultrasmall package facilitates miniaturization in end products Halogen free compliance
Applications
Low-Frequency general-purpose amplifier, impedance conversion, infrared sensor applications Ordering & Package Information Device Package Shipping (Qty / Packing) TF412T5G SOT-883 (Pb-Free / Halogen Free) 8000 / Tape & Reel Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Value Unit Drain-to-Source Voltage V DSX 30 V Gate-to-Drain Voltage V GDS 30 V Gate Current I G 10 mA Drain Current I D 10 mA Power Dissipation P D TBD mW Junction Temperature Tj 50 C Storage Temperature Tstg 55 to +150 C This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Electrical Characteristics at Ta 25C, VM = 7.2V Parameter Symbol Conditions Value Unit min typ max Gate-to-Drain Breakdown Voltage V (BR)GDS IG = 10μA, VDS=0V 30 V Gate-to-Source Leakage Current I GSS VGS = 20V, VDS=0V 10 nA Cutoff Voltage V GS(off) V DS = 10V, ID = 1μA 1.18 0.60 1.5 V Drain Current I DSS V DS = 10V, VGS = 0V 1.2 3.0 mA Forward Transfer Admittance | yfs | V DS = 10V, VGS=0V, f = 1kHz 3.0 5.0 mS Input Capacitance Ciss VDS = 10V, VGS = 0V, f = 1MHz 4 pF Reverse Transfer Capacitance Crss 1.1 pF N-Channel JFT 30V, 1.2 to 3.0mA, 5.0mS, SOT-883 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Oper ating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Ordering number : EN*A2258 Advance Information This document contains information on a new product. Specifications and information herein are subject to change without notice. Electrical Connection 1 : Source 2 : Drain 3 : Gate Top view1 2 Marking A2 M M = Date Code SOT-883 3 1
No.A2258-2/3 ID -- VDS ID -- VDS Drain-to-Source V oltage, VDS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- mA Drain Current, ID -- mA ID -- VGS ID -- VGS Gate-to-Source V oltage, VGS -- V Drain Current, ID -- mA Gate-to-Source V oltage, VGS -- V Drain Current, ID -- mA IT16770 012345 1.0 0.5 1.5 2.0 2.5 3.0 VGS=0V --0.2V --0.3V --0.4V VGS=0V --0.1V --0.2V IT16771 0 5 10 15 20 25 30 1.0 2.0 1.5 0.5 2.5 3.0 --0.1V --0.3V --0.4V HD 131113 IT16773 3.5 3.0 2.5 2.0 1.5 1.0 0.5 2.0mA IDSS =3.0mA 2.5 2.0 1.5 0.5 1.0 3.0 3.5 --25 VDS=10V 25°C Ta=75 VDS=10V Crss -- VDS Drain-to-Source V oltage, VDS -- V Reverse Transfer Capacitance, Crss -- pF Ciss -- VDS Drain-to-Source V oltage, VDS -- V Input Capacitance, Ciss -- pF 23 5 7 20.1 1.0 35 7 2 10 35 7 100 1.0 0.1 IT16777 VGS=0V f=1MHz IT16776 23 5 7 20.1 1.0 35 7 2 10 35 7 100 1.0 VGS=0V f=1MHz | yfs | -- IDSS Drain Current, IDSS -- mA Forward Transfer Admittance, | yfs | -- mS VGS(off) -- IDSS Drain Current, IDSS -- mA Cutoff V oltage, VGS(off) -- V HD131113 --0.4 --0.2 --1.2 --1.4 --0.8 --0.6 --1.0 VDS=10V ID=1.0μA HD131113 VDS=10V VGS=0V f=1kHz
PS No.A2258-3/3 Package Dimensions unit : mm ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequentia l or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s techn ical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC productsfor any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, anddistributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture oft h e part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. SOT-883 (XDFN3), 1.0x0.6, 0.35P CASE 506CB ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. EXPOSED COPPER ALLOWED AS SHOWN. A B E D BOTTOM VIEW b 0.10 C TOP VIEW0.10 C A 0.10 C 0.10 C C SEATING PLANESIDE VIEW DIM MIN MAX MILLIMETERS A 0.340 0.440 A1 0.000 0.030 b 0.075 0.200 D2 0.620 BSC e 0.350 BSC L 0.170 0.300 SOLDER FOOTPRINT* DIMENSIONS: MILLIMETERS 1.10 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. GENERIC MARKING DIAGRAM* *This information is generic. Please refer to device data sheet for actual part XX = Specific Device Code M = Date Code XX M L 0.43 RECOMMENDED D 0.950 1.075 E 0.550 0.675 E2 0.425 0.550 AM0.10 B C M0.05 C e e/2 2X 3X 0.41 0.55