TF321M SANKEN | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
n Absolute Maximum Ratings n Electrical Characteristics Parameter Symbol Ratings Unit Conditions V Tj= –40 to +125°C, RGK =1kΩ 50Hz Half-cycle sinewave, Continuous current, Tc=102°C 50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125 °C f 50Hz f 50Hz, duty 10% f 50Hz, duty 10% 200 TF321M TF341M TF361M 600 200 600 300 700 300 700 400 V V V A A A A V V W W VDRM VRRM VDSM VRSM IT(AV) IT(RMS) ITSM IFGM VFGM VRGM PGM PG(AV) Tj Tstg 400 500 500 3.0 4.7 2.0 5.0 5.0 0.5 –40 to +125 –40 to +125 V V mA V mA V/mS mS °C/W Parameter Symbol Ratings typmin max Unit Conditions mA mA IDRM VTM IGT tq IRRM VGT VGD IH dv/dt Rth 2.0 4.0 3.0 0.1 1.4 1.5 2.0 2.0 Tj=125 °C, VD=VDRM(VRRM), RGK=1kΩ TC=25°C, ITM=5A VD=6V, RL=10Ω , TC=25°C RGK=1kΩ , Tj=25°C Junction to case Tc=25°C VD=1/2 · VDRM, Tj=125°C, RGK=1kΩ , CGK=0.033mF VD=1/2· VDRM, Tj=125°C, RGK=1kΩ n Features l Repetitive peak off-state voltage: VDRM=200, 400, 600V l Average on-state current: IT(AV)=3A l Gate trigger current: IGT=10mA max Weight: Approx. 2.6g External Dimensions (Unit: mm) 1.7–0.2 3.0–0.2 8.8–0.2 f3.75–0.1 1.35–0.15 2.5–0.12.5–0.1 +0.2–0.10.65 10.4max 16.7max 5.0max 2.1max 12.0 min 4.0max (1). Cathode(K) (2). Anode (A) (3). Gate (G) TF321M / TF341M / TF361M TO-220 3A Thyristor a b (1) (2) (3) a. Part Number b. Lot Number Repetitive peak off-state voltage Repetitive peak reverse voltage Non-repetitive peak off-state voltage Non-repetitive peak reverse voltage Average on-state current RMS on-state current Surge on-state current Peak forward gate current Peak forward gate voltage Peak reverse gate voltage Peak gate power loss Average gate power loss Junction temperature Storage temperature Off-state current Reverse current On-state voltage Gate trigger voltage Gate trigger current Gate non-trigger voltage Holding current Critical rate-of-rise of off-state voltage Turn-off time Thermal resistance
0.3 0.5 100 1.0 2.0 4.0 3.0 100 Number of cycle ITSM Ratings 1 5 10 50 100 Gate current iGF (A) 01230 Gate Characteristics See graph at the upper right P GM =5W Gate trigger current IGT (mA) Gate trigger voltage VGT (V) 10 20 30 Tj=–40°C Tj=25°C 12345 120 ° 150 ° 180 DC q=30 50Hz Half-cycle sinewave q: Conduction angle 180°0° 100 150 125 54321 Average on-state current IT(AV) (A) q180° 0° 60° 90° 150° 120° 180° DC 0.5 1 10 10 2 103 104 Pulse width tw (ms) 0.05 0.1 Pulse trigger temperature Characteristics vgt (Typical) Pulse trigger temperature Characteristics igt (Typical) TC=–40 °C 25°C 75°C 125°C vgt tw 50% igt tw 50% 0.5 1 10 10 2 103 104 Pulse width tw (ms) 0.05 0.1 25°C 75°C 125°C –40 0 25 50 75 100 125 15 (RGK=1kΩ ) Junction temperature Tj (°C) Holding current IH (mA) IH temperature Characteristics (Typical) Gate trigger current IGT (mA) –40 0 50 75 100 25 125 0.8 0.6 0.4 0.2 1.0 Junction temperature Tj (°C) –40 0 50 75 100 25 125 Junction temperature Tj (°C) Gate trigger voltage VGT (V) VGT temperature Characteristics (Typical) IGT temperature Characteristics (Typical) 11 01 0 2 103 104 t, Time (ms) 0.1 Transient thermal resistance rth (°C/W) Transient thermal resistance Characteristics (Junction to case) vgt 1cycle 10 ms ITSM Tj=125°C Case temperature TC (°C) Tj =125°C Tj=25 °C On-state voltage vT (V) On-state current iT (A) Surge on-state current ITSM (A) Gate voltage vGF (V) vT – iT Characteristics (max) Average on-state current IT(AV) (A) Average on-state power PT(AV) (W) IT(AV) –PT(AV) Characteristics IT(AV) –Tc Ratings (VD=6V, RL=10Ω ) (VD=6V, RL=10Ω ) TF321M / TF341M / TF361M Tj=–20°C q q=30° –20°C TC=–40 °C –20°C Initial junction temperature 50Hz Half-cycle sinewave q: Conduction angle VGT DC gate trigger voltage at 25°C( )( ) Gate trigger voltage at Ta and tw igt IGT DC gate trigger current at 25°C ( )( ) Gate trigger current at Ta and tw