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Technical content

Features

  • Low Output Noise V oltage : VNO= --112dB typ. (VCC=2V , RL=2.2kΩ, Cin=5pF)
  • Ultrasmall Package Facilitates Miniaturization in End Products : 1.4mm × 1.2mm × 0.34mm
  • Especially Suited for use in electret condenser microphone for audio equipments and telephones
  • Adoption of FBET process
  • Halogen Free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Gate to Drain Voltage VGDO - -20 V Gate Current IG 10 mA Drain Current ID 1 mA Allowable Power Dissipation PD 100 mW Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Packing Type : TL Electrical Connection Marking TL 1 2 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. TF262TH-4-TL-H TF262TH-5-TL-H 1 : Drain 2 : Source 3 : Gate SOT-623 / VTFP

ORDERING INFORMATION

See detailed ordering and shipping information on page 6 of this data sheet. LOT No. LOT No. L R A N K 1 2

www.onsemi.com Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Gate to Drain Breakdown Voltage V(BR)GDO IG=- -100µA - -20 V Cutoff Voltage VGS(off) VDS=2V, ID=1µA - -0.2 - -0.5 - -1.0 V Drain Current IDSS VDS=2V, VGS=0V 140* 350* µA Forward Transfer Admittance | yfs | VDS=2V, VGS=0V, f=1kHz 0.5 0.95 mS Input Capacitance Ciss VDS=2V, VGS=0V, f=1MHz 3.5 pF Reverse Transfer Capacitance Crss VDS=2V, VGS=0V, f=1MHz 0.65 pF [Ta=25°C, VCC=2.0V, RL=2.2kΩ, Cin=5pF , See specified Test Circuit.] Voltage Gain GV VIN=10mV, f=1kHz - -1.5 dB Reduced Voltage Characteristic DGVV VIN=10mV, f=1kHz, VCC=2.0V → 1.5V - -0.8 - -2.0 dB Frequency Characteristic DGvf f=1kHz to 110Hz - -1.0 dB Total Harmonic Distortion THD VIN=30mV, f=1kHz 0.5 % Output Noise Voltage VNO VIN=0V, A Curve --112 dB * : The TF262TH is classified by IDSS as follows : (unit : µA) Marking L4 L5 Rank 4 5 IDSS 140 to 240 210 to 350 Test Circuit OSC 5pF +33µF 2.2kΩ VCC=2.0V VCC=1.5V V Voltage gain Frequency Characteristic Distortion Reduced Voltage Characteristic VTVM THD ID -- VDS Drain to Source Voltage, VDS -- V Drain Current, ID -- µA ID -- VGS Gate to Source Voltage, VGS -- V Drain Current, ID -- µA 04 5123 300 200 250 100 150 350 250 150 IT16225 --0.1V --0.2V --0.3V --0.4V 400 300 200 100 VGS=0V IT16226 VDS=2V IDSS =350 µA 250 µA 150 µA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

www.onsemi.com VGS(off) -- IDSS | yfs | -- IDSS Ciss -- VDS Crss -- VDS Drain Current, IDSS -- µA Forward Transfer Admittance, | yfs | -- mS Drain Current, IDSS -- µA Cutoff Voltage, VGS(off) -- V Drain to Source Voltage, VDS -- V Input Capacitance, Ciss -- pF Drain to Source Voltage, VDS -- V Reverse Transfer Capacitance, Crss -- pF ID -- VGS Gate to Source Voltage, VGS -- V Drain Current, ID -- µA GV -- IDSS Drain Current, IDSS -- µA V oltage Gain, GV -- dB GV -- Cin Electret Capacitance, Cin -- pF V oltage Gain, GV -- dB GV -- VCC Supply Voltage, VCC -- V V oltage Gain, GV -- dB 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VDS=2V ID=1µA 0.6 1.0 0.9 0.8 0.7 1.1 1.2 100 200 300 350 400150 250 IT16228 100 200 300 400150 250 350 --3.5 --2.5 --1.5 --2.0 --1.0 --3.0 --0.5 100 200 300 400150 250 350 IT16229 IT16230 VDS=2V VGS=0V f=1kHz 1.0 1.00.1 102323 5757 VGS=0V f=1MHz 1.0 0.1 1.00.1 10223 5735 7 IT16231 VGS=0V f=1MHz VDS=2V Ta=7 5°C 25°C --25 IT16232 GV : VCC=2V V IN=10mV f=1kHz R L=2.2kΩ Cin=5pF IDSS : VDS=2V 400 350 250 150 300 200 100 IT16227 0 12346 5 --10 --8 --6 --4 --2 IT16233 IT16234 GV : VIN=10mV f=1kHz R L=2.2kΩ Cin=5pF IDSS=350µA 250µA 150µA 02 46 81 612 1410 --14 --10 --12 --8 --6 --4 --2 GV : VCC=2V V IN=10mV f=1kHz R L=2.2kΩ IDSS=350µA 250µA150µA

www.onsemi.com Drain Current, IDSS -- µA Total Harmonic Distortion, THD -- % THD -- VIN Input Voltage, VIN -- mV Total Harmonic Distortion, THD -- % PD -- Ta Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- mW DGVV -- IDSS Drain Current, IDSS -- µA Reduced Voltage Characteristic, DGVV -- dB IT16237 0.4 0.6 0.8 0.2 1.0 THD : VCC=2V V IN=30mV f=1kHz R L=2.2kΩ C in=5pF IDSS : VDS=2V 1.0 0.1 05 0 100 150 200 IT16236 --2.5 --2.0 --1.5 --1.0 --0.5 DGVV : VCC=2V→1.5V V IN=10mV f=1kHz R L=2.2kΩ Cin=5pF IDSS : VDS=2V THD : VCC=2V f=1kHz R L=2.2kΩ Cin=5pF 100 200 300 400150 250 350 100 200 300 400150 250 350 IT16235 IDSS=150µA 250µA 350µA 100 120 0 16014012010080604020 IT16238 THD -- IDSS

www.onsemi.com Package Dimensions unit : mm TF262TH-4-TL-H, TF262TH-5-TL-H Recommended Soldering Footprint SOT-623 / VTFP CASE 631AD ISSUE O 0.5 0.4 0.45 0.45 0.45 0.45 1.1

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