TF1207 TOSHIBA | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE TOSHIBA TF1207 is the IGBT gate driver designed for use Unit in mm with TOSHIBA Insulated Gate Bipolar Transistor odule and 4. 1SMAX. am it includes the optical isolator and IGBT gate driver circuit. ms Using this driver, you can design high reliability and 2 ' compact system. 8} [12345 131419 ¢ en os « Recommended Conditions : ca | 14 Los azasa Input Supply Voltage : VC=5V 1: OUTPUT 1 13: GND Output Supply Voltage : Voc=15V, VEp=—15V 2: Vec 14: Ve P pply 8 ce EE 3 : OUTPUT 2 15: INPUT * High Speed Switching Response : 4: VEE 5: Vz LH =1.5s (Typ.) MD = JEDEC - tpHL =0.8ys (Typ.) + Small Size and Light Weight TOSHIBA 10-42A1A e Including Input-Buffer Weight : 8g ¢ 2500 Vac Optical Isolation MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING input Supply Valnge ———SSCS~dCg Pd Input Voltage —0.5~Vg+0.5 Output Supply Voltage oo Vv Output Voltage Voo~Vinn High Level Peak Output Current (Note 1)| Ionp | _2(o0vs) Low Level Peak Output Current (Note 1) —3 (10s) Operating Frequency (Note 2) Isolation (Input-Output) BVg/AC | 2500 (1min) Operating Temperature —20~70 Storage Temperature —20~85 Lead Soldering Temperature 260°C (10s) Note 1 : Exponential Waveform (f=10kHz, Fig.1) Note 2 : Ipp=2A (5s), IoLp=—8A (5s), Exponential Waveform (Fig.1) 2610016802 malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook 1996-12-02 1/5
b co @ vour Vv; ia F(IN) @ INPUT += OUTPUT @) Voc Vo o- BUFFER +> (3) Voura COUPLER &) Vz ELECTRICAL CHARACTERISTICS (Ta = 25°C, Vc=5V, Vcc = 15V, Veg = - 15V, RL= 5000, f= 10kHz) CHARACTERISTIC SYMBOL TEST CONDITION High Level Input Current Vouri>0V ig.2, 3)| -1.0| —0.5| — | ma | [Input Impedance | Zany [Vram=o | = | tof — | ke | High Level Output Voltage Vou |YFaN)=5~OV, RL=2000 13| 18.5 (Fig.2, 3) Vv Vran)=0-5V, RL =2000 Low Level Output Voltage VoL (Fig.2, 8) —13.5] 13 High Level Supply Current Icon | YFAN)=5~0V, Vouti>0V rl (Fig.2, 3) mA VFUN)=9-5V, VouT1<0V Low Level Supply Current IccL (Fig.2, 3) Zener Voltage (Coupler Supply) Iz=20mA, 4pin to 5pin | — | sal —[ v | Propagation Delay Time to LH VFUIN)=5->0V, VouT1>0V, 15 High Output Level tp Rp=2002 . us Output Rise Time ig2, 9 — | 025] — | Propagation Delay Time to tp VEIN) =5> OV, VouT1<0V, Low Output Level HL |RL=2000 ys Output Fall Time ig2, 9 — | otof — | Isolation Resistance Z _ 10
961001 EBA2”
@ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property-or other rights Gf the third parties which may result from its use. No. license s granted By.implcaton or otherwise under any inaletul property or other rights of TOSHIBA CORPORATION or others @ The information contained herein is subject to change without notice. 1996-12-02 2/5
\\ — IonP tw 10% 9 10% —— IoLp Fig.1 EXPONENTIAL WAVEFORM 90% INPUT VOLTAGE TRCN) oe 10% OUTPUT VOLTAGE Vee Voc 80% VouT1 0 wnnnoo= ns eas ante EE 80% VEE mal ‘pHL | tr te Fig.2. SWITCHING TIME TEST CONDITION G OOO OOOO Rg VFTr ok IGT INPUT 0—{>e Vo d [ep Fig.3 SWITCHING TIME TEST CIRCUIT 4996-12-02 3/5
Ipp — Ta (Typ.) Ver - Ta (Typ) 0.2) 3.5) ow Fa vert a EEEEEEEHH B of Voo=15v 8 lveossv [Py | 2 =m FT Tt. t yd S gs{ veerv TTT TTP TT 8. C OPE a BECO Be EEE ee “COCO ee TT fe JOODD CCD BFC Ree BMC ert rrr 8-77 TPP 8 jt tert rte yy a ee a ccc a -LLLET TET ty tt Fe | a a De AMBIENT TEMPERATURE Ta (°C) AMBIENT TEMPERATURE Ta (°C) 10 Vo - Ta (Typ.) as Ver - Vo (Typ.) . LETT TTT TT] . S Veany=08V Fry Voo=18v PAA 4 6 veo=tv [fd 8 8 vere-wev FPL go) vere EE é emo COPE a ee Boas) Bem a be eg DLE ECEDAEC EL 3 salt xeconatesben vate |---| Be TTT
5 SCOP fe gf POP
Bt OE ower ner} a CCC yee 2 lo ee | a ge AA BEE EEE FEE sol LE 2 -40 -20 0 20 40 60 80 100 3.0 35 40 45 50 5.5 60 65 70 AMBIENT TEMPERATURE Ta (°C) INPUT SUPPLY VOLTAGE Vc (V) 20 VOL, VOH — Ta (Typ.) 20 VoL, VOH — VCC, VEE (Typ.) se LLU TTT eo | vom Lt ty yy © LEE = af Meowrosrey | TT TT S “TEE T TTT TT Er tT | BM te ann 8 tara ee a e FO » EEE ee Oe 3 ae 4a EEEEH Hieem) 0 EEE zB 4 Voc=15V 2 4 A BELLE (eats soy B LURE aL ttt yy titi tT ttt tt Og a9 a0 0 0 a a a ) AMBIENT TEMPERATURE Ta (°C) OUTPUT SUPPLY VOLTAGE Vcc, Veg (V) 1996-12-02 4/5
tpLH, tpHL — Ta (Typ.) tr, te — Ta (Typ.) a ™TTLLLILILLLLLL i PP REE Ty ee a 3 250] See 2 4 a 2 EEE | TT a = sol ft | TT TT | ve=sv as *° CEPT ee = TT vray=05rev = EL = aaa yy 42 of | 1 Pp err io 8 ~PCCeeeel) very ee ee Z 160) Se on
33 Fe 4 ee
£2 ott cane 5 COCCEEELI oo 62 “Cer 2 oof | LL I Sot in HI veo e ~lftrrret Titty g | | [er [| Veany=0.5/5v es eee ae © 8 2] Nees -16v CP F208 oLLETT TTT? Ti tt og 20 0 20 a0 508000 og a 0 30 a0 60 80 00 AMBIENT TEMPERATURE Ta (°C) AMBIENT TEMPERATURE Ta (°C) tpLH, tpHL — VCC, VEE (Typ.) tpLH, tpHL — VC (Typ.) CTT TT TT ve-sv a a a ee a ee a ee att PP me pg LEE EN EEE ss “ET et as SEN a EP A i Sz of ft TP Neer ze NE | ge “COs 22 (Se 2: of LETT er 62 “eee 63 “OOP ee gf PrP Pro Bo on] ven -eavo7 g Sy gs “CTT Voowisv re a | BEE veeo ey a COCO) econ Fe oL-LEE TTT TTI 0 4 8 12 16 20 30 35 40 45 5.0 5.5 60 65 70 OUTPUT SUPPLY VOLTAGE Vcc, VEE (V) INPUT SUPPLY VOLTAGE Vc (V) 1996-12-02 5/5