TESDUB5V0 TSC | Alldatasheet

Document overview

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Technical content

  • Meet IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) - Protects one Bi-directional I/O lines - Low clamping voltage - Working Voltage : 5, 12 and 24V - High component density Case : 0603-B standard package molded plastic Terminals : Gold plated, solderable per MIL-STD-750, method 2026 SYMBOL UNITS TESDUB5V0 TESDUB12V TESDUB24V TESDUB5V0 TESDUB12V TESDUB24V TESDUB5V0 TESDUB12V TESDUB24V TESDUB5V0 TESDUB12V TESDUB24V TESDUB5V0 TESDUB12V TESDUB24V T J °C TSTG °C Document Number：DS_S1312002 Version : B13 IL VBO CT -55 to + 125 -55 to + 150 IEC 61000-4-2(air) IEC 61000-4-2(contact) IPP=5A, TP=8/20us IPP=1A, TP=8/20us IPP=1A, TP=8/20us TP=8/20us Vc PPP ESD CONDITIONS IR=1mA VR=5V VR=12V VR=24V VR=0V, f=1MHz -- 1 5 12 - 10 - -1 5 2 0 28 - -0 . 12 MIN TYP MAX 5.1 13 17 - W Junction temperature range Storage temperature range -- 7 5 Clamping voltage V Peak pulse power Junction capacitance pF ESD capability KV V Leakage current μA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER Diode breakdown voltage 0603-B MECHANICAL DATA Weight : 0.003g (approximately) TESDUB5V0/12V/24V Taiwan Semiconductor Small Signal Product Bi-directional ESD Protection Diodes

FEATURES

PART NO. Note 1: "xxx" defines voltage from 5V (TESDUB5V0) to 24V (TESDUB24V) PART NO. TESDUB5V0 TESDUB5V0 TESDUB5V0 TESDUB5V0 (TA=25℃ unless otherwise noted) Document Number：DS_S1312002 Version : B13 RATINGS AND CHARACTERISTICS CURVES 4000 / ReelR4 TESDUB5V0 R4 R4 F0 TESDUB5V0 R4G R4 G F0 Green compound TESDUB5V0 R4 R4 TESDUB5V0 R4G R4 G Green compound (Note 2) Note 2: Manufacture special control, if empty means no special control requirement. EXAMPLE PREFERRED P/N PACKING CODE GREEN COMPOUND CODE MANUFACTURE CODE

DESCRIPTION

PACKING CODE GREEN COMPOUND CODE PACKAGE PACKING MANUFACTURE CODE TESDUBxxx (Note 1) Suffix "G" 0603-B TESDUB5V0/12V/24V Taiwan Semiconductor Small Signal Product

ORDERING INFORMATION

0.001 0.01 0.1 0 2 04 06 08 0 1 0 0 Reverse current (uA) Time (us) Fig. 2 Reverse characteristics 100 120 0 2 55 07 5 1 0 0 1 2 5 1 5 0 Power Rating (%) Ambient Temperature (oC) Fig.4 Power derating curve Mounting on glass epoxy PCB 0 1 02 03 04 0 Capacitance(pF) Reverse voltage(V) 5V0 Fig. 3 Capacitance between terminals 12V 24V 100 0 1 02 03 04 0 Percent of IPPM Time (us) Fig. 1 8/20us Peak pulse current waveform acc. IEC 61000-4-5 tr = 8μs to 100% 20us to 50us

A 1.60 1.80 0.063 0.071 B 0.80 1.00 0.031 0.039 C D 0.70 0.85 0.028 0.033 E F G0 . 8 0 X0 . 6 0 X1 2.00 Y0 . 8 0 TESDUB5V0 E05 TESDUB12V E12 TESDUB24V E24 Document Number：DS_S1312002 Version : B13 Small Signal Product TESDUB5V0/12V/24V Taiwan Semiconductor SUGGESTED PAD LAYOUT MARKING 0.70 Typ. 0.028 Typ. 0.35 Typ. 0.014 Typ. 0.30 Typ. 0.012 Typ. Part No. DIM. Unit(mm) DIMENSIONS DIM. Marking Unit(mm) Unit(inch)