TESDL5V0_11 TSC | Alldatasheet
Document overview
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Technical content
Features
Pb free version, RoHS compliant, and Halogen free High temperature soldering guaranteed: 260°C/10s Terminal: Gold plated,solder per MIL-STD-750, Method 2026 guaranteed Meet IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) Marking Code : E05, E12, E24 Mounting position: Any ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) Value .-55 to + 150.Junction and Storage Temperature Range TJ, TSTG PPP Type Number Symbol W25 1005 Pin Configutation C Rating at 25°C ambient temperature unless otherwise specified. EWeight :6 mg (approximately) TESDL12V TESDL24V TESDL5V0 Peak Pulse Power (tp=8/20μs waveform)
Ordering Information
Applications
1.30 0.05 10.051 1.30 0.70 0.02 0.106 2.70 mm inch Unit : Version : C11
TESDL5V0/TESDL12V/TESDL24V Bi-directional ESD Protection Diode Small Signal Diode
Electrical Characteristics
12 (Typ.) 10 (Typ.) 15 (Typ.) V R=0V, f=1.0MHz -4 7 Reverse Breakdown Voltage Reverse Stand-Off Voltage IR= VR= Reverse Leakage Current 25 - VR= 1mA V (BR) IR VR= VRWM IPP= -5 1 Vc - IPP= - Type Number Symbol Min Max Units 5.1 - V13 V V V - 9.8 V-1 5 Clamping Voltage I PP= Vc Clamping Voltage IPP= VcIPP= TESDL5V0 Clamping Voltage IPP= Junction Capacitance CJ Version : C11
TESDL5V0/TESDL12V/TESDL24V Bi-directional ESD Protection Diode Small Signal Diode Rating and Sharacteristic Curves Ambient Tempeatature (oC) Reverse Voltage (V) FIG 4 Typical Junction Capacitance 0 5 10 15 20 25 Normalized Capacitance 012345 Clamping Voltage (V) FIG 5 Clamping Voltage vs. Peak Pulse Current) Peak Pulse Current (A) Waveform Parameters tr = 8μs, td = 20μs TESDL5V0 TESDL12V TESDL24V TESDL5V0 TESDL12V TESDL24V 0.01 0.1 0.1 1 10 100 1000 Peak Pulse Power Ppp (KW) FIG 1 Non-Repetitive Peak Pulse Power vs. Pulse Time FIG 2 Pulse Waveform 100 110 0 5 10 15 20 25 30 Percent of IPP td=Ipp/2 Time (us) Waveform Parameters: tr = 8μs, td = 20μs FIG 3 Admissible Power Dissipation Curve 100 120 0 20 40 60 80 100 120 140 160 180 Power Rating (%) f = 1.0MHz Version : C11
TESDL5V0/TESDL12V/TESDL24V Bi-directional ESD Protection Diode Small Signal Diode Applications Information Designed to protect sensitive electronics from damage or latch-up due to ESD Designed to replace multilayer varistors (MLVs) in portable applications Features large crosssectional area junctions for conducting high transient currents Offers superior electrical characteristics such as lower clamping voltage and no device degradation when compared to MLVs Circuit Board Layout Recommendations Tape & Reel specification Symbol Dimension (mm) Carrier width A 1.55 ± 0.10 Reel width W1 13.5 Max Overall tape thickness T 0.23 ± 0.05 Tape width W 8.00 ±0.20 Sprocke hole pitch P0 4.00 ±0.10 Embossment center P1 2.00 ±0.05 Punch hole position F 3.50 ±0.05 Punch hole pitch P 4.00 ±0.10 Feed hole width D2 13.0 ± 0.20 Sprocket hole position E 1.75 ±0.10 Reel outside diameter D 178 ± 1 Reel inner diameter D1 60.0 Min Carrier depth C 1.05 ± 0.10 Sprocket hole d 1.55 ± 0.05 Carrier length B 2.65 ± 0.10 Minimize the path length between the ESD Protection Diode and the protected line. Minimize all conductive loops including power and ground loops. The ESD transient return path to ground should be kept as short as possible. Never run critical signals near board edges. Use ground planes whenever possible. Item Designed to protect one data, I/O, or power supply line. The combination of small size and high ESD surge capability makes them ideal for use in portable applications. Good circuit board layout is critical for the suppression of ESD induced transients. Place the ESD Protection Diode near the input terminals or connectors to restrict transient coupling. Top Cover Tape Carieer Tape Any Additional Label (If Required) TSC label D1D2D T C d A B F W E Direction of Feed Version : C11