TESDG5V0A_15 TSC | Alldatasheet
Document overview
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Technical content
- Meet IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) - Protects two I/O lines and power line - Low leakage, low operating and clamping voltage - Low capacitance (<0.9pF) for high-speed interfaces - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) - Case: SOT-563 small outline plastic package - Weight: 3 ± 0.5 mg - Marking code: 2A - Cellular Handsets and Accessories - Cordless Phones - Monitors and Flat Panel Displays - Digital Cameras - MP3 Players SYMBOL UNIT P PP W IPP A IPPR μA TJ , TSTG oC SYMBOL UNIT VRWM V V(BR) V IR μA CJ pF Document Number: DS_S1501020 Version: B15 VIPP = 3 A -1 6 Junction Capacitance VR = 0 V , f = 1.0 MHz 0.9 Reverse Leakage Current VR = 5 V -1 Clamping Voltage IPP = 1 A VC -9 . 8 Reverse Stand-Off Voltage - 5 Reverse Breakdown Voltage IR = 1 mA 6- KVESD per IEC 61000-4-2 (Contact) ± 8 Junction and Storage Temperature Range -55 to +150 PARAMETER MIN MAX Peak Pulse Power (tp=8/20μs waveform) 50 Peak Pulse Current (tp=8/20μs) 3 ESD per IEC 61000-4-2 (Air) VESD ± 15 Reverse Peak Pulse Current (tp=8/20μs) 1 - Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed : 260°C/10s
APPLICATIONS
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER VALUE TESDG5V0A Taiwan Semiconductor 5V, 2-Channels ESD Protection Array
FEATURES
(TA=25°C unless otherwise noted) Document Number: DS_S1501020 Version: B15 TESDG5V0A Taiwan Semiconductor RATINGS AND CHARACTERISTICS CURVES 0.01 0.1 0.1 1 10 100 1000 Peak Pulse Power Ppp (KW) Fig. 1 Non-Repetitive Peak Pulse Power VS. Pulse Time Pulse Duration (μs) 100 110 0 5 10 15 20 25 30 Percent of IPP Time (us) Fig. 2 Pulse Waveform td = Ipp / 2 100 110 0 25 50 75 100 125 150 Power Rating (%) Ambient Temperature (oC) Fig. 3 Admissible Power Dissipation Curve 0.0 0.2 0.4 0.6 0.8 1.0 Normalized Capacitance (pF) Reverse Voltage (V) Fig. 4 Typical Junction Capacitance Clamping Voltage, VC (V) Peak Pulse Current , Ipp (A) Fig. 5 Clamping Voltage VS. Peak Pulse Current Waveform parameters: tr = 8 μs , td = 20 μs
PACKAGE OUTLINE DIMENSIONS Min Max Min Max A 1.50 1.70 0.059 0.067 B 1.10 1.30 0.043 0.051 C 0.17 0.27 0.007 0.011 D E 1.50 1.70 0.059 0.067 F 0.50 0.60 0.020 0.024 G 0.20 0.40 0.008 0.016 SUGGEST PAD LAYOUT Z G X Y Note: 1. The suggested land pattern dimensions have been provided for reference only, as actual pad layouts may vary depending on application. Document Number: DS_S1501020 Version: B15 0.500 0.020 0.50 BSC 0.020 BSC DIM. Unit (mm) Unit (inch) 0.375 0.015 0.500 0.020 1.700 0.067 Typ. Typ. 2.200 0.087 1.200 0.047 DIM. Unit (mm) Unit (inch) TESDG5V0A Taiwan Semiconductor Small Signal Product ORDER INFORMATION (EXAMPLE) SOT-563 TESDG5V0A RFG Green compound code Packing code Part no.
assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_S1501020 Version: B15 TESDG5V0A Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,