TEMD7100ITX01_V01 VISHAY | Alldatasheet

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Technical content

www.vishay.com Vishay Semiconductors Rev. 1.0, 24-Apr-15 1 Document Number: 84317 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Silicon PIN Photodiode

DESCRIPTION

TEMD7100ITX01 is a high speed and high sensitive PIN photodiode. It is a miniatur e surface mount device (SMD) including the chip with a 0.23 mm 2 sensitive area and a daylight blocking filter matched with IR emitters operating at wavelength of 830 nm to 950 nm.

FEATURES

  • Package type: surface mount
  • Package form: 0805
  • Dimensions (L x W x H in mm): 2 x 1.25 x 0.85
  • Radiant sensitive area (in mm 2): 0.23
  • High radiant sensitivity
  • Enhanced operating temperature range: T OP = -40 °C to +110 °C
  • Daylight blocking filter matched with 830 nm to 950 nm emitters
  • Fast response times
  • Angle of half sensitivity: ϕ = ± 60°
  • Floor life: 72 h, MSL 4, according to J-STD-020
  • Lead (Pb)-free reflow soldering
  • AEC-Q101 qualified
  • Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

  • High speed photo detector
  • Infrared remote control
  • Infrared data transmission
  • Photo interrupters
  • Shaft encoders Note
  • Test conditions see table “Basic Characteristics” Note
  • MOQ: minimum order quantity 20043-1 PRODUCT SUMMARY COMPONENT Ira (μA) ϕ (deg) λ0.5 (nm) TEMD7100ITX01 3 ± 60 750 to 1050

ORDERING INFORMATION

ORDERING CODE PACKAGING REMARKS PACKAGE FORM TEMD7100ITX01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V R 60 V Power dissipation T amb ≤ 25 °C P V 215 mW Junction temperature T j 110 °C Operating temperature range T amb -40 to +110 °C Storage temperature range T stg -40 to +110 °C Soldering temperature Acc. reflow solder profile fig. 8 T sd 260 °C Thermal resistance junction / ambient Acc. J-STD-051 R thJA 270 K/W

www.vishay.com Vishay Semiconductors Rev. 1.0, 24-Apr-15 2 Document Number: 84317 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Fig. 3 - Reverse Light Current vs. Irradiance Fig. 4 - Reverse Light Current vs. Reverse Voltage BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I F = 50 mA V F 1V Breakdown voltage I R = 100 μA, E = 0 V (BR) 60 V Reverse dark current V R = 10 V, E = 0 I ro 13 n A Diode capacitance VR = 0 V, f = 1 MHz, E = 0 C D 4p F VR = 5 V, f = 1 MHz, E = 0 C D 1.3 pF Open circuit voltage E e = 1 mW/cm2, λ = 950 nm V o 350 mV Temperature coefficient of Vo Ee = 1 mW/cm2, λ = 950 nm TK Vo -2.6 mV/K Short circuit current E e = 1 mW/cm2, λ = 950 nm I k 3μ A Temperature coefficient of Ik Ee = 1 mW/cm2, λ = 950 nm TK Ik 0.1 %/K Reverse light current E e = 1 mW/cm2, λ = 950 nm, VR = 5 V I ra 2 . 433 . 6 μ A Angle of half sensitivity ϕ ± 60 deg Wavelength of peak sensitivity λp 950 nm Range of spectral bandwidth λ0.5 750 to 1050 nm Rise time V R = 10 V, RL = 1 kΩ, λ = 820 nm t r 100 ns Fall time V R = 10 V, RL = 1 kΩ, λ = 820 nm t f 100 ns 100 1000 Iro - Reverse Dark Current (nA) Tamb - Ambient Temperature (°C)94 8427 VR = 10 V 100806040 0.6 0.8 1.0 1.2 1.4 Ira, rel - Relative Reverse Light Current Tamb - Ambient Temperature (°C)94 8416 VR = 5 V λ = 950 nm 0 10080604020 0.001 0.01 0.1 0.01 0.1 1 10 Ira - Reverse Light Current (µA) Ee - Irradiance (mW/cm2 )21535 VR = 5 V λ = 950 nm 100 0.1 1 10 100 VR - Reverse Voltage 1 mW/cm2 Ira - Reverse Light Current (µA) 17026 λ = 950 nm

www.vishay.com Vishay Semiconductors Rev. 1.0, 24-Apr-15 3 Document Number: 84317 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 5 - Diode Capacitance vs. Reverse Voltage Fig. 6 - Relative Spectral Sensitivity vs. Wavelength Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement REFLOW SOLDER PROFILE Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 DRYPACK Devices are packed in moistu re barrier bags (MBB) to prevent the products from mo isture absorption during transportation and storage. Each bag contains a desiccant. FLOOR LIFE Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 72 h Conditions: T amb < 30 °C, RH < 60 % Moisture sensitivity level 4, according to J-STD-020. DRYING In case of moisture absorpt ion devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry us ing recommended conditions 0.1 CD - Diode Capacitance (pF) VR- Reverse Voltage (V)94 8430 E = 0 f = 1 MHz 100101 0.2 0.4 0.6 0.8 1.0 1.2 600 700 800 900 1000 1100 21554 λ - Wavelength (nm) S ( λ)rel - Relative Spectral Sensitivity 0.4 0.2 0 Ie, rel - Relative Radiant Sensitivity 94 8013 0.6 0.9 0.8 30° 10° 20° 40° 50° 60° 70° 80° 0.7 1.0 ϕ - Angular Displacement 100 150 200 250 300 0 50 100 150 200 250 300 Time (s) Temperature (°C) 240 °C 245 °C max. 260 °C max. 120 s max. 100 s 217 °C max. 30 s max. ramp up 3 °C/s max. ramp down 6 °C/s 19841 255 °C

www.vishay.com Vishay Semiconductors Rev. 1.0, 24-Apr-15 4 Document Number: 84317 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE DIMENSIONS in millimeters 20018

www.vishay.com Vishay Semiconductors Rev. 1.0, 24-Apr-15 5 Document Number: 84317 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BLISTER TAPE DIMENSIONS in millimeters 21501

www.vishay.com Vishay Semiconductors Rev. 1.0, 24-Apr-15 6 Document Number: 84317 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 REEL DIMENSIONS in millimeters of the wheel is supplier specific. Form of the leave open Issue: 2; 26.04.10 Drawing-No.: 9.800-5096.01-4 specifications according to DIN technical drawings Ø 177.8 max. Ø 55 min. 8.4 +2.5 8.4 +0.15 14.4 max. Ø 13 + 0.5 - 0.2 1.5 min. Ø 20.2 min. Z Z 2:1 20875

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